400 A Insulated Gate Bipolar Transistors (IGBT) 112

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

SKM400GB125D

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

POWER CONTROL

3.85 V

UNSPECIFIED

RECTANGULAR

2

532 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN/SILVER

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

120 ns

IEC-60747-1; UL RECOGNIZED

CM400HA-24A

Mitsubishi Electric

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2350 W

400 A

UNSPECIFIED

POWER CONTROL

3 V

UNSPECIFIED

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FD300R06KE3HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

600 ns

7

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

CM400HG-66H

Mitsubishi Electric

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

4100 W

400 A

UNSPECIFIED

POWER CONTROL

4.2 V

UNSPECIFIED

RECTANGULAR

1

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

HIGH RELIABILITY

MG400V1US51A

Mitsubishi Electric

N-CHANNEL

SINGLE WITH BUILT-IN FET

NO

2750 W

400 A

UNSPECIFIED

POWER CONTROL

4.5 V

UNSPECIFIED

RECTANGULAR

1

770 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

210 ns

UL RECOGNIZED

CM400DY-24NF

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1470 W

400 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

260

FF300R06KE3HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

600 ns

7

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

CM400DU-12H

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1130 W

400 A

UNSPECIFIED

POWER CONTROL

3 V

UNSPECIFIED

RECTANGULAR

2

350 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

SUPER FAST RECOVERY

NOT SPECIFIED

NOT SPECIFIED

250 ns

SKM300GAL063D

Semikron International

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1350 W

400 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

600 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN SILVER

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

e2

240 ns

UL RECOGNIZED

IXGN400N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

400 A

PLASTIC/EPOXY

POWER CONTROL

1.25 V

UNSPECIFIED

RECTANGULAR

1

840 ns

4

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

NICKEL

UPPER

R-PUFM-X4

ISOLATED

LOW CONDUCTION LOSS

124 ns

IXGK400N30A3

Littelfuse

N-CHANNEL

SINGLE

NO

1000 W

400 A

PLASTIC/EPOXY

POWER CONTROL

1.15 V

THROUGH-HOLE

RECTANGULAR

1

555 ns

3

FLANGE MOUNT

150 Cel

SILICON

300 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

100 ns

CM400DU-12F

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RTC

NO

960 W

400 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CM400DU-12NFH

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1640 W

400 A

UNSPECIFIED

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

260

CM400DU-24NFH

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

2500 W

400 A

UNSPECIFIED

POWER CONTROL

6.5 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

260

CM400DY-13T

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

2830 W

400 A

PLASTIC/EPOXY

POWER CONTROL

200 ns

1.75 V

UNSPECIFIED

RECTANGULAR

2

400 ns

7

FLANGE MOUNT

150 Cel

SILICON

650 V

600 ns

-40 Cel

20 V

800 ns

6.6 V

UPPER

R-PUFM-X7

ISOLATED

UL RECOGNIZED

BSM200GA170DLC

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1920 W

400 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

1

930 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

200 ns

FZ200R65KF1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3800 W

400 A

UNSPECIFIED

4.9 V

UNSPECIFIED

RECTANGULAR

1

6500 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

6300 V

20 V

TIN LEAD

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

e0

1120 ns

FZ400R12KP4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2400 W

400 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

1

840 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X3

1

ISOLATED

Not Qualified

260

315 ns

FZ200R65KF1NOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

6500 ns

5

FLANGE MOUNT

SILICON

6300 V

UPPER

R-XUFM-X5

ISOLATED

1120 ns

FD200R65KF1KNOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

6500 ns

7

FLANGE MOUNT

SILICON

6300 V

UPPER

R-XUFM-X7

ISOLATED

1120 ns

BSM200GB170DLC

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1660 W

400 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

2

930 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

200 ns

IRG5U400SD12B

Infineon Technologies

N-Channel

400 A

3.5 V

1160 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

ISOLATED

160000 ns

BSM200GB170DLCHOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

930 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

200 ns

FZ400R12KE4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2400 W

400 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

810 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X3

1

ISOLATED

Not Qualified

260

370 ns

FZ400R65KF2

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

7350 W

400 A

UNSPECIFIED

4.9 V

UNSPECIFIED

RECTANGULAR

2

5900 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

6300 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1120 ns

FZ400R65KE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

400 A

PLASTIC/EPOXY

POWER CONTROL

3.4 V

UNSPECIFIED

RECTANGULAR

2

8100 ns

7

FLANGE MOUNT

125 Cel

SILICON

6500 V

-50 Cel

20 V

6.6 V

UPPER

R-PUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

850 ns

FZ400R65KF2NOSA1

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

5900 ns

7

FLANGE MOUNT

150 Cel

SILICON

6300 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1120 ns

BSM300GA160D

Infineon Technologies

2500 W

400 A

3.7 V

1

Insulated Gate BIP Transistors

150 Cel

1600 V

20 V

IFF300B17N2E4PB11BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE CURRENT SENSING RESISTOR AND THERMISTOR

NO

400 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

830 ns

26

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X26

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

340 ns

UL RECOGNIZED

IFF300B17N2E4P_B11

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR

NO

1500 W

400 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

2

830 ns

26

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X26

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

340 ns

UL APPROVED

BSM200GA170DLCHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

930 ns

5

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

200 ns

IRGDDN400M12

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

550 ns

4

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

NOT SPECIFIED

NOT SPECIFIED

400 ns

2A300HB12C2F

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1450 W

400 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

2

500 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X7

ISOLATED

190 ns

FD200R65KF1-K

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3800 W

400 A

UNSPECIFIED

4.9 V

UNSPECIFIED

RECTANGULAR

1

6500 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

6300 V

20 V

TIN LEAD

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e0

1120 ns

IRG5K400HF06B

Infineon Technologies

N-Channel

400 A

2.1 V

1440 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

390000 ns

FD400R12KF4

Infineon Technologies

400 A

2.7 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

FS400R12KF4

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

2500 W

400 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

6

1150 ns

27

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X27

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

800 ns

FF300R06KE3B2HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

940 W

400 A

UNSPECIFIED

1.9 V

UNSPECIFIED

RECTANGULAR

2

600 ns

7

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

FS200R07A02E3S6BKSA2

Infineon Technologies

N-Channel

694 W

400 A

6.5 V

570 ns

150 Cel

SILICON

700 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

220 ns

FD300R06KE3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

940 W

400 A

UNSPECIFIED

1.9 V

UNSPECIFIED

RECTANGULAR

1

600 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

FF400R12KF4

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

2.7 V

UNSPECIFIED

RECTANGULAR

2

1150 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

800 ns

FF300R06KE3

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

940 W

400 A

UNSPECIFIED

1.9 V

UNSPECIFIED

RECTANGULAR

2

600 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

FD400R16KF4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

3.3 V

UNSPECIFIED

RECTANGULAR

1

1600 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1600 V

TIN LEAD

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

e0

1000 ns

FS400R12A2T4BOSA1

Infineon Technologies

1500 W

400 A

1.85 V

3

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

NOT SPECIFIED

NOT SPECIFIED

FF300R06ME3

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

400 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

600 ns

10

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

FF400R16KF4

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

3.3 V

UNSPECIFIED

RECTANGULAR

2

1600 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1600 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1000 ns

FF400R12KF4NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1150 ns

10

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X10

ISOLATED

800 ns

FF300R06ME3BOMA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

400 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

600 ns

10

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X10

ISOLATED

190 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.