400 A Insulated Gate Bipolar Transistors (IGBT) 112

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FS400R12KF4NOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

1150 ns

27

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X27

ISOLATED

800 ns

FS200R07A02E3_S6

Infineon Technologies

N-Channel

694 W

400 A

6.5 V

570 ns

150 Cel

SILICON

700 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

220 ns

FF400R17KF6C_B2

Infineon Technologies

3300 W

400 A

3.1 V

1

Insulated Gate BIP Transistors

125 Cel

1700 V

20 V

NOT SPECIFIED

NOT SPECIFIED

FF400R16KF4NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1600 ns

10

FLANGE MOUNT

150 Cel

SILICON

1600 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1000 ns

FS400R12A2T4

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

400 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

700 ns

24

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

250 ns

FF300R06KE3-B2

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

940 W

400 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

2

600 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

UL RECOGNIZED

IRG7T400SD12B

Infineon Technologies

N-Channel

400 A

2.2 V

640 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

ISOLATED

185000 ns

FD400R16KF4NOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

1600 ns

5

FLANGE MOUNT

SILICON

1600 V

UPPER

R-XUFM-X5

ISOLATED

1000 ns

MG300Q1US51

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2500 W

400 A

UNSPECIFIED

MOTOR CONTROL

3.6 V

UNSPECIFIED

RECTANGULAR

1

300 ns

600 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

2500 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

200 ns

MG300Q2YS50

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

2000 W

400 A

UNSPECIFIED

MOTOR CONTROL

3.6 V

UNSPECIFIED

RECTANGULAR

2

300 ns

600 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

2000 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

200 ns

MG400J2YS60A

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

2

11

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

1SCT2-P WITH BUILT IN FAULT-SIGNAL OUTPUT CKT(FO) AND OVER TEMPERATURE CKT(OT)

MG400J2YS40

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

UNSPECIFIED

RECTANGULAR

2

350 ns

8

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X8

Not Qualified

HIGH SPEED

MG400J1US42

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

400 A

1

SILICON

600 V

Not Qualified

MG400J2YS45

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

2

1000 ns

8

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X8

Not Qualified

MG400J2YS61A

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

2160 W

400 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

2

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

MG400Q2YS70A

Toshiba

3750 W

400 A

2.7 V

1

Insulated Gate BIP Transistors

100 Cel

1200 V

20 V

MG400J1US41

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

UNSPECIFIED

RECTANGULAR

1

350 ns

4

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X4

Not Qualified

HIGH SPEED

MG400J1US2

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

400 A

1

SILICON

600 V

Not Qualified

MG400J1US46

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

400 A

1

SILICON

600 V

Not Qualified

MG400Q1US11

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

1

1000 ns

4

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X4

Not Qualified

MG400Q1US21

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

5

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X5

Not Qualified

MG400Q2YS60A

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

MOTOR CONTROL

2.8 V

UNSPECIFIED

RECTANGULAR

2

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

1SCT2-P WITH BUILT IN FAULT-SIGNAL OUTPUT CKT(FO) AND OVER TEMPERATURE CKT(OT)

MG400J1US1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

500 ns

4

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

400 ns

MG400J1US11

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

400 A

1

SILICON

600 V

Not Qualified

MG400H1US1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

1000 ns

4

FLANGE MOUNT

SILICON

500 V

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

HIGH SPEED

1100 ns

MG400N1US41

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

400 A

1

SILICON

1000 V

Not Qualified

MG400Q1US41

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2400 W

400 A

UNSPECIFIED

MOTOR CONTROL

600 ns

4 V

UNSPECIFIED

RECTANGULAR

1

500 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

2400 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

MG400V2YS60A

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

4300 W

400 A

UNSPECIFIED

MOTOR CONTROL

3.4 V

UNSPECIFIED

RECTANGULAR

2

1300 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

550 ns

MG400Q1US65H

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2600 W

400 A

UNSPECIFIED

POWER CONTROL

4 V

UNSPECIFIED

RECTANGULAR

1

600 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

100 ns

MG400J2YS50

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1800 W

400 A

UNSPECIFIED

MOTOR CONTROL

240 ns

2.7 V

UNSPECIFIED

RECTANGULAR

2

300 ns

500 ns

8

FLANGE MOUNT

Insulated Gate BIP Transistors

1800 W

150 Cel

SILICON

600 V

20 V

8 V

UPPER

R-XUFM-X8

ISOLATED

Not Qualified

HIGH SPEED

400 ns

MG400N1US42

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

400 A

1

SILICON

1000 V

Not Qualified

MG400J1US51

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1500 W

400 A

UNSPECIFIED

MOTOR CONTROL

300 ns

2.7 V

UNSPECIFIED

RECTANGULAR

1

300 ns

200 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

1500 W

150 Cel

SILICON

600 V

400 ns

20 V

400 ns

8 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

200 ns

MG400Q1US1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

POWER CONTROL

4 V

UNSPECIFIED

RECTANGULAR

1

500 ns

4

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X4

Not Qualified

HIGH SPEED

MG400Q1US42

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

POWER CONTROL

4 V

UNSPECIFIED

RECTANGULAR

1

500 ns

5

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X5

Not Qualified

HIGH SPEED

MG400Q1US2

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

5

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X5

Not Qualified

HIGH SPEED

MG400J1US21

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

400 A

1

SILICON

600 V

Not Qualified

MG400J1US45

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

1

1000 ns

4

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X4

Not Qualified

MBN400C33A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

4000 W

400 A

UNSPECIFIED

POWER CONTROL

5.5 V

UNSPECIFIED

RECTANGULAR

1

3400 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

2300 ns

MBN400GS12AW

Renesas Electronics

2000 W

400 A

3.4 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

MBM400GS6AW

Renesas Electronics

NO

1000 W

400 A

PLASTIC/EPOXY

2.5 V

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

UPPER

R-PUFM-X7

Not Qualified

RJP65S08DWA-80#W0

Renesas Electronics

N-CHANNEL

400 A

Insulated Gate BIP Transistors

150 Cel

650 V

30 V

NOT SPECIFIED

NOT SPECIFIED

MBM400JS6AW

Renesas Electronics

NO

1470 W

400 A

PLASTIC/EPOXY

2.4 V

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

UPPER

R-PUFM-X7

Not Qualified

MBN400AS6

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

400 A

POWER CONTROL

1

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

400 ns

MBN400GS12A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

400 A

POWER CONTROL

1

SILICON

1200 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

400 ns

MBN400C33

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

400 A

POWER CONTROL

1

SILICON

3300 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

1200 ns

MBM400CS6A

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

400 A

POWER CONTROL

2

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

350 ns

MBM400JS6A

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

400 A

POWER CONTROL

2

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

350 ns

MBM400GR6

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

800 ns

7

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

350 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.