6 A Insulated Gate Bipolar Transistors (IGBT) 78

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
SGD02N60BUMA1	Infineon Technologies	N-CHANNEL	SINGLE	YES		6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		354 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V					TIN	SINGLE	R-PSSO-G2	3	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-252AA	e3			34 ns
FGD3N60LSDTM-T	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL		1.5 V	GULL WING	RECTANGULAR	1		1420 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	25 V		5 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS	TO-252AA				85 ns
FGD3N60LSDTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		1420 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS		e3	30	260	85 ns
IXGT6N170AHV	Littelfuse	N-CHANNEL	SINGLE	YES	75 W	6 A	PLASTIC/EPOXY	POWER CONTROL		7 V	GULL WING	RECTANGULAR	1		271 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	91 ns
IXGH6N170A	Littelfuse	N-CHANNEL	SINGLE	NO	75 W	6 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	65 ns	271 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	91 ns
IGD06N60TATMA1	Infineon Technologies	N-CHANNEL	SINGLE	YES		6 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		249 ns	2	SMALL OUTLINE		175 Cel	SILICON	600 V					TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-252AA	e3			17 ns
IXGT6N170A	Littelfuse	N-CHANNEL	SINGLE	YES	75 W	6 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	65 ns	271 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	91 ns
HGTD3N60C3S9A	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	33 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1	275 ns	455 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V				6 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-252AA	e3			15 ns
STGF6NC60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	6 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		222 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5.75 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3			17.3 ns
IXGT6N170AHV-TRL	IXYS Corporation	N-CHANNEL	SINGLE	YES	75 W	6 A	PLASTIC/EPOXY	POWER CONTROL		7 V	GULL WING	RECTANGULAR	1		271 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V	-55 Cel	20 V		5 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-268AA				91 ns
STGF3NC120HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	6 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING			THROUGH-HOLE	RECTANGULAR	1		680 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3			18.5 ns
MGP4N60E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		396 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-220AB	e0			65 ns
SGR6N60UF	Onsemi	N-CHANNEL	SINGLE	YES	30 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL		2.6 V	GULL WING	RECTANGULAR	1	150 ns	202 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V	280 ns	6.5 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS, HIGH SPEED SWITCHING					54 ns
MGP4N60ED	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	62.5 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		396 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED SWITCHING, ULTRA FAST SOFT RECOVERY	TO-220AB	e0			65 ns
FGD3N60UNDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		146 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		8.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252	e3	30	260	7.4 ns
STGD3NB60SDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48 W	6 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		4800 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V		4.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3	30	260	275 ns
STGD3NB60MT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		859 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e0			14 ns
STGP3NB60S	STMicroelectronics	N-CHANNEL	SINGLE	NO	65 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		4800 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			710 ns
STGD3NB60FT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	60 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		535 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e0			16.5 ns
STGP3NB60M	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	68 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		859 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	TIN LEAD	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e0			14 ns
STGB3NB60MD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		859 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V						SINGLE	R-PSSO-G2			Not Qualified						14 ns
STGF3NB60FD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		535 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V		SINGLE	R-PSFM-T3	1	ISOLATED	Not Qualified		TO-220AB				16.5 ns
STGB3NB60SDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		4800 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3			275 ns
STGP3NB60FDFP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		535 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3			16.5 ns
STGD3NB60HT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	35 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		168 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-252	e3			46 ns
STGB3NB60FDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	68 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		535 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2			Not Qualified			e0			16.5 ns
STGD3NB60ST4	STMicroelectronics	N-CHANNEL	SINGLE	YES	45 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		4800 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-252AA	e3			710 ns
STGD3NB60KD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	35 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		168 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		7 V	MATTE TIN	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e3			46 ns
STGP3NB60F	STMicroelectronics	N-CHANNEL	SINGLE	NO	68 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		535 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			16.5 ns
STGD3NB60S	STMicroelectronics	N-CHANNEL	SINGLE	YES	45 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		4800 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-252	e3			710 ns
STGB3NB60MDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		859 ns	2	SMALL OUTLINE			SILICON	600 V						SINGLE	R-PSSO-G2			Not Qualified						14 ns
STGD3NB60SD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		6 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		4800 ns	2	SMALL OUTLINE		175 Cel	SILICON	600 V					TIN	SINGLE	R-PSSO-G2			Not Qualified		TO-252	e3			275 ns
STGP3NB60H	STMicroelectronics	N-CHANNEL	SINGLE	NO	70 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		168 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	TIN LEAD	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e0			46 ns
STGP3NB60MD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		6 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		859 ns	3	FLANGE MOUNT			SILICON	600 V						SINGLE	R-PSFM-T3			Not Qualified		TO-220AB				14 ns
STGB3NB60SD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		4800 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2			Not Qualified		TO-263	e3			275 ns
STGD3NB60H	STMicroelectronics	N-CHANNEL	SINGLE	YES	35 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		168 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-252AA	e3			46 ns
STGP3NB60FD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	68 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		535 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			16.5 ns
STGD3NB60M	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		859 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V						SINGLE	R-PSSO-G2			Not Qualified		TO-252AA				14 ns
IGD06N60T	Infineon Technologies	N-CHANNEL	SINGLE	YES	88 W	6 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		249 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V		5.7 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-252AA	e3		260	17 ns
SGB02N60ATMA1	Infineon Technologies	N-CHANNEL	SINGLE	YES		6 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		354 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V						SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-263AB				34 ns
SIGC04T60GE	Infineon Technologies	N-CHANNEL	SINGLE	YES		6 A	UNSPECIFIED	POWER CONTROL		1.9 V	NO LEAD	RECTANGULAR	1			2	UNCASED CHIP		175 Cel	SILICON	600 V	-40 Cel	20 V		6.5 V		UPPER	R-XUUC-N2							NOT SPECIFIED	NOT SPECIFIED
SIGC04T65EX1SA1	Infineon Technologies	N-CHANNEL		YES		6 A												Insulated Gate BIP Transistors	175 Cel		650 V		20 V		6.4 V										NOT SPECIFIED	NOT SPECIFIED
SIGC07T60UNX1SA1	Infineon Technologies	N-CHANNEL	SINGLE	YES		6 A	UNSPECIFIED	POWER CONTROL			NO LEAD	RECTANGULAR	1		122 ns	2	UNCASED CHIP		150 Cel	SILICON	600 V						UPPER	R-XUUC-N2			Not Qualified				NOT SPECIFIED	NOT SPECIFIED	11 ns
SGU02N60	Infineon Technologies	N-CHANNEL	SINGLE	NO	30 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL	18 ns		THROUGH-HOLE	RECTANGULAR	1	63 ns	354 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSIP-T3			Not Qualified	LOW CONDUCTION LOSS	TO-251AA	e3			34 ns
SIGC04T60EX1SA2	Infineon Technologies	N-CHANNEL				6 A												Insulated Gate BIP Transistors	150 Cel		600 V		20 V		6.5 V										NOT SPECIFIED	NOT SPECIFIED
SIGC04T60	Infineon Technologies	N-CHANNEL	SINGLE	YES		6 A	UNSPECIFIED	POWER CONTROL			NO LEAD	RECTANGULAR	1		185 ns	2	UNCASED CHIP	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V				UPPER	R-XUUC-N2			Not Qualified				NOT SPECIFIED	NOT SPECIFIED	22 ns
SKP02N60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	6 A	PLASTIC/EPOXY	POWER CONTROL	17 ns		THROUGH-HOLE	RECTANGULAR	1	80 ns	354 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	34 ns
SIGC07T60SNCX1SA3	Infineon Technologies	N-CHANNEL	SINGLE	YES		6 A	UNSPECIFIED	POWER CONTROL			NO LEAD	SQUARE	1		318 ns	2	UNCASED CHIP		150 Cel	SILICON	600 V						UPPER	S-XUUC-N2			Not Qualified				NOT SPECIFIED	NOT SPECIFIED	41 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.