600 A Insulated Gate Bipolar Transistors (IGBT) 86

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
FF600R12ME4P_B72	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		600 A	UNSPECIFIED	POWER CONTROL	2.1 V	UNSPECIFIED	RECTANGULAR	2		770 ns	11	FLANGE MOUNT		150 Cel	SILICON	1200 V	-40 Cel	20 V	6.4 V		UPPER	R-XUFM-X11	ISOLATED							310 ns
FF450R12ME3	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	2100 W	600 A	UNSPECIFIED		2.15 V	UNSPECIFIED	RECTANGULAR	2		810 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X11	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	400 ns
FF600R12ME4_B72	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		600 A	UNSPECIFIED	POWER CONTROL	2.1 V	UNSPECIFIED	RECTANGULAR	2		770 ns	11	FLANGE MOUNT		150 Cel	SILICON	1200 V	-40 Cel	20 V	6.4 V		UPPER	R-XUFM-X11	ISOLATED					NOT SPECIFIED	NOT SPECIFIED	310 ns
FF600R12KF4NOSA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	NO		600 A	UNSPECIFIED			UNSPECIFIED	RECTANGULAR	2		1150 ns	10	FLANGE MOUNT		175 Cel	SILICON	1200 V					UPPER	R-XUFM-X10	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	800 ns
FF450R17ME4	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	2500 W	600 A	UNSPECIFIED	POWER CONTROL	2.3 V	UNSPECIFIED	RECTANGULAR	2		1600 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1700 V		20 V			UPPER	R-XUFM-X11	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	380 ns
FF600R07ME4	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		600 A	UNSPECIFIED	POWER CONTROL	1.95 V	UNSPECIFIED	RECTANGULAR	2		570 ns	11	FLANGE MOUNT		150 Cel	SILICON	650 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X11	ISOLATED							250 ns
FF600R16KF4NOSA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	NO		600 A	UNSPECIFIED			UNSPECIFIED	RECTANGULAR	2		1600 ns	10	FLANGE MOUNT		150 Cel	SILICON	1600 V				MATTE TIN	UPPER	R-XUFM-X10	ISOLATED	Not Qualified			e3			1000 ns
FF600R12KT4	Infineon Technologies	N-Channel				600 A								.47 ns				125 Cel	SILICON	1200 V	-40 Cel	20 V	6.35 V											.228 ns
FF600R16KF4	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	NO		600 A	UNSPECIFIED		3.5 V	UNSPECIFIED	RECTANGULAR	2		1600 ns	10	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1600 V				TIN LEAD	UPPER	R-XUFM-X10	ISOLATED	Not Qualified			e0			1000 ns
FF450R17ME4_B11	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		600 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	2		1600 ns	11	FLANGE MOUNT			SILICON	1700 V					UPPER	R-XUFM-X11						NOT SPECIFIED	NOT SPECIFIED	380 ns
FF600R12ME7_B11	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		600 A	UNSPECIFIED	POWER CONTROL	1.75 V	UNSPECIFIED	RECTANGULAR	2		545 ns	11	FLANGE MOUNT		175 Cel	SILICON	1200 V	-40 Cel	20 V	6.45 V		UPPER	R-XUFM-X11	ISOLATED		UL RECOGNIZED					315 ns	IEC-60747; IEC-60749; IEC-60068; IEC-61140
FF400R17KE3_B2	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2550 W	600 A	UNSPECIFIED		2.45 V	UNSPECIFIED	RECTANGULAR	2		1900 ns	8	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	1700 V		20 V		TIN LEAD	UPPER	R-XUFM-X8	ISOLATED	Not Qualified			e0			900 ns
MG600Q1US65H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	5400 W	600 A	UNSPECIFIED	POWER CONTROL	4 V	UNSPECIFIED	RECTANGULAR	1		900 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X4	ISOLATED	Not Qualified						300 ns
MG600Q1US61	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	5400 W	600 A	UNSPECIFIED	MOTOR CONTROL	2.6 V	UNSPECIFIED	RECTANGULAR	1		600 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X4	ISOLATED	Not Qualified	HIGH SPEED					500 ns
MG600Q1US51	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	4100 W	600 A	UNSPECIFIED	MOTOR CONTROL	3.6 V	UNSPECIFIED	RECTANGULAR	1		1200 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X4	ISOLATED	Not Qualified						600 ns
MG600Q1US45	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		600 A	PLASTIC/EPOXY	POWER CONTROL		UNSPECIFIED	RECTANGULAR	1			5	FLANGE MOUNT			SILICON	1200 V					UPPER	R-PUFM-X5		Not Qualified
MG600Q1US41	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		600 A	PLASTIC/EPOXY	POWER CONTROL	4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		5	FLANGE MOUNT		150 Cel	SILICON	1200 V					UPPER	R-PUFM-X5		Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED
MG600Q2YS60A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	4300 W	600 A	UNSPECIFIED	MOTOR CONTROL	3.1 V	UNSPECIFIED	RECTANGULAR	2		1400 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X11	ISOLATED	Not Qualified						500 ns
MG600J2YS60A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		600 A	UNSPECIFIED	MOTOR CONTROL		UNSPECIFIED	RECTANGULAR	2			11	FLANGE MOUNT		150 Cel	SILICON	600 V					UPPER	R-XUFM-X11	ISOLATED	Not Qualified	1SCT2-P WITH BUILT IN FAULT-SIGNAL OUTPUT CKT(FO) AND OVER TEMPERATURE CKT(OT)
MG600J1US51	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		600 A	PLASTIC/EPOXY	POWER CONTROL		UNSPECIFIED	RECTANGULAR	1			5	FLANGE MOUNT		150 Cel	SILICON	600 V					UPPER	R-PUFM-X5		Not Qualified	HIGH SPEED			NOT SPECIFIED	240
MG600J2YS61A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2770 W	600 A	UNSPECIFIED	MOTOR CONTROL	2.5 V	UNSPECIFIED	RECTANGULAR	2			11	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V			UPPER	R-XUFM-X11	ISOLATED	Not Qualified
MBM600GS6C	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			600 A		POWER CONTROL				2							SILICON	600 V							ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY					350 ns
MBN600GR12	Renesas Electronics			NO	3570 W	600 A	PLASTIC/EPOXY		2.8 V	UNSPECIFIED	RECTANGULAR	1			4	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel		1200 V		20 V			UPPER	R-PUFM-X4		Not Qualified
MBN600C20	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	4000 W	600 A	UNSPECIFIED	POWER CONTROL	5.4 V	UNSPECIFIED	RECTANGULAR	1		4000 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	2000 V		20 V			UPPER	R-XUFM-X4	ISOLATED	Not Qualified	HIGH RELIABILITY, HIGH SPEED, LOW NOISE					1600 ns
MBN600GS12AW	Renesas Electronics				3100 W	600 A			3.4 V			1					Insulated Gate BIP Transistors	150 Cel		1200 V		20 V
MBN600C33	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE			600 A		POWER CONTROL				1							SILICON	3300 V							ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY					1200 ns
MBN600GR12A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		600 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	1		750 ns	4	FLANGE MOUNT			SILICON	1200 V					UPPER	R-XUFM-X4	ISOLATED	Not Qualified	HIGH RELIABILITY, HIGH SPEED, LOW NOISE					350 ns
MBN600C33A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	5800 W	600 A	UNSPECIFIED	POWER CONTROL	5.5 V	UNSPECIFIED	RECTANGULAR	1		4100 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	3300 V		20 V			UPPER	R-XUFM-X4	ISOLATED	Not Qualified	HIGH RELIABILITY, HIGH SPEED, LOW NOISE					2600 ns
MBM600GS6CW	Renesas Electronics			NO	1700 W	600 A	PLASTIC/EPOXY		2.5 V	UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel		600 V		20 V			UPPER	R-PUFM-X7		Not Qualified
MG17450WB-BN4MM	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		600 A	UNSPECIFIED	MOTOR CONTROL	2.45 V	UNSPECIFIED	RECTANGULAR	2		1300 ns	11	FLANGE MOUNT		125 Cel	SILICON	1700 V	-40 Cel	20 V	6.4 V		UPPER	R-XUFM-X11	ISOLATED					NOT SPECIFIED	NOT SPECIFIED	400 ns	UL RECOGNIZED
T0600TB45A	Littelfuse	N-CHANNEL			4800 W	600 A											Insulated Gate BIP Transistors	125 Cel		4500 V		20 V
VIO500-12S	Littelfuse				2500 W	600 A			3.9 V			1					Insulated Gate BIP Transistors	150 Cel		1200 V		30 V
VIO600-12S	Littelfuse				2300 W	600 A			4 V			1					Insulated Gate BIP Transistors	150 Cel		1200 V		30 V
IXYK300N65A3	Littelfuse	N-CHANNEL	SINGLE	NO	2300 W	600 A	PLASTIC/EPOXY	POWER CONTROL	1.6 V	THROUGH-HOLE	RECTANGULAR	1		435 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-264AA				155 ns
MG12450WB-BN2MM	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		600 A	UNSPECIFIED	MOTOR CONTROL		UNSPECIFIED	RECTANGULAR	2		680 ns	11	FLANGE MOUNT		125 Cel	SILICON	1200 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X11	ISOLATED					NOT SPECIFIED	NOT SPECIFIED	220 ns
T0600NC17A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1850 W	600 A	CERAMIC, METAL-SEALED COFIRED		2.65 V	UNSPECIFIED	ROUND	1		2540 ns	3	DISK BUTTON		125 Cel	SILICON	1700 V	-40 Cel	20 V			END	O-CEDB-X3								1020 ns
T0600AF65G	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	7100 W	600 A	CERAMIC, METAL-SEALED COFIRED		5.2 V	UNSPECIFIED	ROUND	1		6900 ns	3	DISK BUTTON		125 Cel	SILICON	6500 V	-40 Cel	20 V			END	O-CEDB-X3								5000 ns
IXYX300N65A3	Littelfuse	N-CHANNEL	SINGLE	NO	2300 W	600 A	PLASTIC/EPOXY	POWER CONTROL	1.6 V	THROUGH-HOLE	RECTANGULAR	1		435 ns	3	IN-LINE		175 Cel	SILICON	650 V	-55 Cel	20 V	5 V		SINGLE	R-PSIP-T3	COLLECTOR							155 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.