MG600Q2YS60A by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	MG600Q2YS60A
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 4300 W; Maximum Collector Current (IC): 600 A; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet	MG600Q2YS60A Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	600 A
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	MOTOR CONTROL
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Nominal Turn Off Time (toff):	1400 ns
No. of Terminals:	11
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	4300 W
Maximum Collector-Emitter Voltage:	1200 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	500 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X11
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Maximum VCEsat:	3.1 V

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