268 W Insulated Gate Bipolar Transistors (IGBT) 30

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGP4650D-EPBF

Infineon Technologies

N-CHANNEL

NO

268 W

76 A

42 ns

54 ns

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

FGHL50T65SQ

Onsemi

N-CHANNEL

SINGLE

NO

268 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

IRGP4069D-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

76 A

PLASTIC/EPOXY

POWER CONTROL

42 ns

THROUGH-HOLE

RECTANGULAR

1

54 ns

188 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

78 ns

AFGHL50T65SQD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

134 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

49 ns

AEC-Q101

FGHL50T65SQDT

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

159 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

e3

40.4 ns

AFGHL50T65SQ

Onsemi

N-CHANNEL

SINGLE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

VMAX016001

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

108.8 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

ISOLATED

FAST SWITCHING

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

32 ns

AEC-Q101

FGHL50T65MQDTL4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

373 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T4

TO-247

e3

77 ns

FGHL50T65MQD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

FGA40T65SHD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

85.6 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

e3

NOT SPECIFIED

NOT SPECIFIED

51.2 ns

FGH50T65SQD_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

110 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

e3

33 ns

FGH50T65SQD-F155

Onsemi

N-CHANNEL

SINGLE

NO

268 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

119.5 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

RC-IGBT

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

33 ns

FGA40S65SH

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

1.81 V

THROUGH-HOLE

RECTANGULAR

1

233.2 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

e3

106.4 ns

FGA5065ADF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

100 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

2.2 V

THROUGH-HOLE

RECTANGULAR

1

80 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

e3

NOT SPECIFIED

NOT SPECIFIED

57.6 ns

FGHL50T65LQD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

30 V

6 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

FGA40T65SHDF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.81 V

THROUGH-HOLE

RECTANGULAR

1

126 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

e3

49 ns

FGHL50T65MQDT

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

144 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

51 ns

FGH40T65SHDF_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

126 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

7.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

NOT SPECIFIED

NOT SPECIFIED

49 ns

FGH40T70SHD_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

81 ns

3

FLANGE MOUNT

175 Cel

SILICON

700 V

-55 Cel

20 V

7.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

e3

56 ns

FGH40T65SHD-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

85.6 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

7.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

51.2 ns

FGH40T70SHD-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

700 V

-55 Cel

20 V

7.5 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

AFGH50T65SQDN

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

100 A

PLASTIC/EPOXY

GENERAL PURPOSE

THROUGH-HOLE

RECTANGULAR

1

110 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

Tin (Sn)

SINGLE

R-PSFM-T3

TO-247AB

e3

33 ns

AEC-Q101

FGH40T65SH_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

85.6 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

TO-247AB

e3

51.2 ns

FGH40T65UPD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

34 ns

THROUGH-HOLE

RECTANGULAR

1

22 ns

213 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

e3

57 ns

FGH40T65SH-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

85.6 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

TO-247

e3

51.2 ns

FGH4L50T65SQD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

169.6 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

SINGLE

R-PSFM-T4

TO-247

NOT SPECIFIED

NOT SPECIFIED

44.8 ns

IRGP4069DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

76 A

PLASTIC/EPOXY

POWER CONTROL

42 ns

THROUGH-HOLE

RECTANGULAR

1

54 ns

188 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

78 ns

IRGP4069PBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

268 W

76 A

PLASTIC/EPOXY

POWER CONTROL

42 ns

THROUGH-HOLE

RECTANGULAR

1

54 ns

188 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

78 ns

IRGP4650DPBF

Infineon Technologies

N-CHANNEL

NO

268 W

76 A

42 ns

54 ns

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

IRGP4069-EPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

268 W

76 A

PLASTIC/EPOXY

POWER CONTROL

42 ns

THROUGH-HOLE

RECTANGULAR

1

54 ns

188 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

78 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.