280 W Insulated Gate Bipolar Transistors (IGBT) 30

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

APTGL60TL120T3G

Microchip Technology

N-CHANNEL

COMPLEX

NO

280 W

80 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

4

370 ns

16

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X16

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

80 ns

IXYH8N250CV1HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

29 A

PLASTIC/EPOXY

POWER CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

328 ns

3

FLANGE MOUNT

175 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

24 ns

MWI75-06A7

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

280 W

90 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

6

310 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

e3

100 ns

UL RECOGNIZED

MWI75-06A7T

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 W

90 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

6

310 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

e3

100 ns

UL RECOGNIZED

MG50J2YS50

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

280 W

50 A

UNSPECIFIED

MOTOR CONTROL

240 ns

2.7 V

UNSPECIFIED

RECTANGULAR

2

300 ns

200 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

280 W

150 Cel

SILICON

600 V

160 ns

20 V

400 ns

8 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

80 ns

IXYH8N250CHV

Littelfuse

N-CHANNEL

SINGLE

NO

280 W

29 A

PLASTIC/EPOXY

POWER CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

328 ns

3

FLANGE MOUNT

175 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

24 ns

NXH160T120L2Q1SG

Onsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR

NO

280 W

140 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

4

30

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.9 V

UPPER

R-XUFM-X30

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

NXH160T120L2Q1PG

Onsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR

NO

280 W

140 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

4

30

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.9 V

UPPER

R-XUFM-X30

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

BSM35GD120DN2

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

280 W

50 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

6

450 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

120 ns

BSM35GB120DN2

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

280 W

35 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

2

450 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

120 ns

BSM35GD120DN2E3224

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

280 W

50 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

6

450 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

120 ns

BSM35GB120DL

Infineon Technologies

280 W

65 A

2.6 V

1

Insulated Gate BIP Transistors

125 Cel

1200 V

20 V

BSM30GP60

Infineon Technologies

N-CHANNEL

COMPLEX

NO

280 W

70 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

BSM50GB60DLC

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

280 W

75 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

2

151 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

52 ns

BSM35GD120D2

Infineon Technologies

280 W

50 A

3.2 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

BSM35GD120DLCE3224

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

280 W

70 A

UNSPECIFIED

2.6 V

UNSPECIFIED

RECTANGULAR

6

370 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

SP000879284

Infineon Technologies

N-Channel

280 W

2.15 V

630 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

ISOLATED

107 ns

FS50R12KT4_B15

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 W

50 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

490 ns

28

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X28

1

ISOLATED

Not Qualified

260

185 ns

FS50R12KT3

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 W

75 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

610 ns

28

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

FS50R12KT4_B11

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 W

50 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

490 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X25

1

ISOLATED

Not Qualified

260

185 ns

FP50R12KT3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

280 W

75 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

7

610 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

FP50R12KT4_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

280 W

50 A

UNSPECIFIED

2.25 V

UNSPECIFIED

RECTANGULAR

7

620 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

FP50R12KT4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

280 W

50 A

UNSPECIFIED

2.25 V

UNSPECIFIED

RECTANGULAR

7

620 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X23

1

ISOLATED

Not Qualified

260

210 ns

MG50J6ES50

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

280 W

50 A

UNSPECIFIED

MOTOR CONTROL

240 ns

2.7 V

UNSPECIFIED

RECTANGULAR

6

300 ns

200 ns

19

FLANGE MOUNT

Insulated Gate BIP Transistors

280 W

150 Cel

SILICON

600 V

160 ns

20 V

400 ns

8 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

80 ns

MKI75-06A7

Littelfuse

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 W

90 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

4

310 ns

14

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X14

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

UL RECOGNIZED

MWI35-12A7

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

280 W

62 A

UNSPECIFIED

POWER CONTROL

2.8 V

UNSPECIFIED

RECTANGULAR

6

570 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

e3

180 ns

UL RECOGNIZED

IXYA8N250CHV

Littelfuse

N-CHANNEL

SINGLE

YES

280 W

29 A

PLASTIC/EPOXY

POWER CONTROL

4 V

GULL WING

RECTANGULAR

1

328 ns

2

SMALL OUTLINE

175 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

24 ns

IXYH10N170CV1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

36 A

PLASTIC/EPOXY

POWER CONTROL

4.1 V

THROUGH-HOLE

RECTANGULAR

1

260 ns

3

FLANGE MOUNT

175 Cel

SILICON

1700 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

21 ns

IXYH8N250C

Littelfuse

N-CHANNEL

SINGLE

NO

280 W

29 A

PLASTIC/EPOXY

POWER CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

266 ns

3

FLANGE MOUNT

175 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

16 ns

IXYH10N170C

Littelfuse

N-CHANNEL

SINGLE

NO

280 W

36 A

PLASTIC/EPOXY

POWER CONTROL

4.1 V

THROUGH-HOLE

RECTANGULAR

1

260 ns

3

FLANGE MOUNT

175 Cel

SILICON

1700 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

21 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.