400 W Insulated Gate Bipolar Transistors (IGBT) 36

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IRG7PH50K10D-EPBF	Infineon Technologies	N-CHANNEL		NO	400 W	90 A			80 ns					110 ns				Insulated Gate BIP Transistors		150 Cel		1200 V		30 V		7.5 V
IRG7PH50K10DPBF	Infineon Technologies	N-CHANNEL		NO	400 W	90 A			80 ns					110 ns				Insulated Gate BIP Transistors		150 Cel		1200 V		30 V		7.5 V
CM100DY-12H	Mitsubishi Electric	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	100 A	UNSPECIFIED	MOTOR CONTROL		2.8 V	UNSPECIFIED	RECTANGULAR	2		200 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V				UPPER	R-XUFM-X7		ISOLATED	Not Qualified	SUPER FAST RECOVERY			NOT SPECIFIED	NOT SPECIFIED	120 ns
CM50E3U-24H	Mitsubishi Electric	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	50 A	UNSPECIFIED	MOTOR CONTROL		3.7 V	UNSPECIFIED	RECTANGULAR	1		500 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X5		ISOLATED	Not Qualified	SUPER FAST RECOVERY			NOT SPECIFIED	NOT SPECIFIED	280 ns
IXGH50N90B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1		820 ns	3	FLANGE MOUNT			150 Cel	SILICON	900 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	48 ns
FMG1G100US60L	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	100 A	PLASTIC/EPOXY	MOTOR CONTROL		2.8 V	UNSPECIFIED	RECTANGULAR	1		320 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	600 V		20 V				UPPER	R-PUFM-X7		ISOLATED	Not Qualified	LOW CONDUCTION LOSS			NOT SPECIFIED	NOT SPECIFIED	85 ns
MMIX1Y100N120C3H1	Littelfuse	N-CHANNEL		YES	400 W	92 A												Insulated Gate BIP Transistors		150 Cel		1200 V		20 V		5 V
IXBT32N300	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	400 W	80 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		795 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	3000 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA	e3	10	260	573 ns
IXBH32N300	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	80 A	PLASTIC/EPOXY	POWER CONTROL		3.2 V	THROUGH-HOLE	RECTANGULAR	1		795 ns	3	FLANGE MOUNT			150 Cel	SILICON	3000 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	573 ns
AFGHL25T120RLD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	48 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		205 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V		7.1 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			43.2 ns	AEC-Q101
AFGHL40T120RHD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	48 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		230 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V		7.3 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			66 ns	AEC-Q101
BSM50GD120DN2G	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	78 A	UNSPECIFIED	POWER CONTROL		3.7 V	THROUGH-HOLE	RECTANGULAR	6		450 ns	39	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-T39		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	100 ns
BSM50GAL120DN2	Infineon Technologies				400 W	76 A				3.2 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V		20 V
DDB6U134N16RR_B11	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO	400 W	125 A	UNSPECIFIED	POWER CONTROL		2.6 V	UNSPECIFIED	RECTANGULAR	1		510 ns	19	FLANGE MOUNT			125 Cel	SILICON	1200 V	-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X19		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	150 ns	UL APPROVED
BSM50GB100D	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	50 A	PLASTIC/EPOXY	POWER CONTROL		5 V	UNSPECIFIED	RECTANGULAR	2			7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V		20 V				UPPER	R-PUFM-X7		ISOLATED	Not Qualified						30 ns
BSM50GB120DN2	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	78 A	UNSPECIFIED			3.2 V	UNSPECIFIED	RECTANGULAR	2		450 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X7		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	100 ns
MG50Q1ZS50	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	78 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	1		600 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X5		ISOLATED	Not Qualified						200 ns
MG50Q2YS50A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	78 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	400 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-XUFM-X7		ISOLATED	Not Qualified	HIGH SPEED					50 ns
MG100J1ZS40	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	100 A	UNSPECIFIED	MOTOR CONTROL	600 ns	3.5 V	UNSPECIFIED	RECTANGULAR	1	350 ns		5	FLANGE MOUNT	Insulated Gate BIP Transistors	400 W	150 Cel	SILICON	600 V		20 V		6 V		UPPER	R-XUFM-X5		ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED
MG50Q2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	50 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns	800 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	400 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-XUFM-X7		ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
MG50Q2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	78 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	400 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-XUFM-X7		ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	200 ns
MG75N2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL		5 V	UNSPECIFIED	RECTANGULAR	2		1000 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V						UPPER	R-PUFM-X7		ISOLATED	Not Qualified	HIGH SPEED SWITCHING					500 ns
MG50Q2YS91	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-PUFM-X7			Not Qualified
IXGQ100N60Y4	Littelfuse				400 W	100 A				4 V			1					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
IXGQ100N100Y3	Littelfuse				400 W	100 A				4 V			1					Insulated Gate BIP Transistors		150 Cel		1000 V		20 V
IXGQ100N50Y4	Littelfuse				400 W	100 A				3.5 V			1					Insulated Gate BIP Transistors		150 Cel		500 V		20 V
IXXR100N60B3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	145 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		350 ns	3	IN-LINE			150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED				e1	10	260	92 ns
IXBH32N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	80 A	PLASTIC/EPOXY	POWER CONTROL		3.2 V	THROUGH-HOLE	RECTANGULAR	1		795 ns	3	FLANGE MOUNT			150 Cel	SILICON	3000 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247				573 ns
IXGL200N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	400 W	150 A	PLASTIC/EPOXY	POWER CONTROL		1.5 V	THROUGH-HOLE	RECTANGULAR	1	300 ns	493 ns	5	IN-LINE			150 Cel	SILICON	600 V	-55 Cel	20 V	750 ns	5 V		SINGLE	R-PSIP-T5		ISOLATED							127 ns
IXGL75N250	Littelfuse	N-CHANNEL	SINGLE	NO	400 W	110 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1		420 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	2500 V		20 V		5 V		SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED	305 ns	UL RECOGNIZED
IXGX50N90B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1		820 ns	3	IN-LINE			150 Cel	SILICON	900 V	-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		COLLECTOR							48 ns
IXGK50N90B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1		820 ns	3	FLANGE MOUNT			150 Cel	SILICON	900 V	-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR			TO-264AA	e1	10	260	48 ns
IXGH50N90B2	Littelfuse	N-CHANNEL	SINGLE	NO	400 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1		820 ns	3	FLANGE MOUNT			150 Cel	SILICON	900 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	48 ns
MMIX1G120N120A3V1	Littelfuse	N-CHANNEL		YES	400 W	220 A												Insulated Gate BIP Transistors		150 Cel		1200 V		20 V		5 V
IXBT32N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	400 W	80 A	PLASTIC/EPOXY	POWER CONTROL		3.2 V	GULL WING	RECTANGULAR	1		795 ns	2	SMALL OUTLINE			150 Cel	SILICON	3000 V	-55 Cel	20 V		5 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS	TO-268AA				573 ns
IXGT50N90B2	Littelfuse	N-CHANNEL	SINGLE	YES	400 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1		550 ns	2	SMALL OUTLINE			150 Cel	SILICON	900 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	48 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.