500 W Insulated Gate Bipolar Transistors (IGBT) 56

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IKY40N120CS6XKSA1	Infineon Technologies	N-Channel			500 W	80 A				2.15 V					445 ns					175 Cel	SILICON	1200 V		-40 Cel	20 V		6.3 V	TIN								e3			56 ns
IXYN82N120C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	105 A	PLASTIC/EPOXY	POWER CONTROL		3.2 V	UNSPECIFIED	RECTANGULAR	1		295 ns	4	FLANGE MOUNT			150 Cel	SILICON	1200 V		-55 Cel	20 V		5 V		UPPER	R-PUFM-X4		ISOLATED							119 ns	UL RECOGNIZED
IKW40N120CS6XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.15 V	THROUGH-HOLE	RECTANGULAR	1		445 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V		-40 Cel	20 V		6.3 V	TIN	SINGLE	R-PSFM-T3					TO-247	e3			65 ns
F475R12KS4BOSA1	Infineon Technologies	N-CHANNEL	2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	500 W	100 A	UNSPECIFIED	POWER CONTROL		3.75 V	UNSPECIFIED	RECTANGULAR	4		390 ns	24	FLANGE MOUNT			125 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X24		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	190 ns
FGH30S130P	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	210 ns	905 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	1300 V			25 V		7.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	413 ns
IXBH42N250	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	104 A	PLASTIC/EPOXY	POWER CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		950 ns	3	FLANGE MOUNT			150 Cel	SILICON	2500 V		-55 Cel	25 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				652 ns
F4-75R12KS4	Infineon Technologies	N-CHANNEL	2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	500 W	100 A	UNSPECIFIED	POWER CONTROL		3.75 V	UNSPECIFIED	RECTANGULAR	4		390 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X24		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	190 ns
FGL40N120AND	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	64 A	PLASTIC/EPOXY	MOTOR CONTROL		3.2 V	THROUGH-HOLE	RECTANGULAR	1	80 ns	165 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V		-55 Cel	25 V		7.5 V		SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS	TO-264				45 ns
IXBT42N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	500 W	104 A	PLASTIC/EPOXY	POWER CONTROL		3 V	GULL WING	RECTANGULAR	1		950 ns	2	SMALL OUTLINE			150 Cel	SILICON	3000 V		-55 Cel	25 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	652 ns
NXH160T120L2Q2F2SG	Onsemi	N-CHANNEL	COMPLEX	NO	500 W	181 A	UNSPECIFIED	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	4		435 ns	56	FLANGE MOUNT			125 Cel	SILICON	1200 V		-40 Cel	20 V		6.4 V		UPPER	R-XUFM-X56		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	150 ns
IXYP30N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	500 W	75 A	PLASTIC/EPOXY	POWER CONTROL		3.3 V	THROUGH-HOLE	RECTANGULAR	1		296 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V		-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				71 ns
BSM75GD120DLC	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	500 W	125 A	UNSPECIFIED			2.6 V	UNSPECIFIED	RECTANGULAR	6		420 ns	39	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X39		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns
IXGE200N60B	Littelfuse	N-CHANNEL	SINGLE	NO	500 W	160 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	1		540 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V				UPPER	R-PUFM-X4		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	120 ns
IXYH30N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	500 W	75 A	PLASTIC/EPOXY	POWER CONTROL		3.3 V	THROUGH-HOLE	RECTANGULAR	1		296 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V		-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	71 ns
IXYN80N90C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	115 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	1		201 ns	4	FLANGE MOUNT			150 Cel	SILICON	900 V		-55 Cel	20 V		5.5 V		UPPER	R-PUFM-X4		ISOLATED							134 ns	UL RECOGNIZED
APT40GR120S	Microchip Technology	N-CHANNEL		YES	500 W	88 A												Insulated Gate BIP Transistors		150 Cel		1200 V			30 V		6 V
FGL40N120AN	Onsemi	N-CHANNEL	SINGLE	NO	500 W	64 A	PLASTIC/EPOXY	POWER CONTROL		3.2 V	THROUGH-HOLE	RECTANGULAR	1	80 ns	165 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V		-55 Cel	25 V		7.5 V		SINGLE	R-PSFM-T3				RC-IGBT	TO-264AA				45 ns
HGT5A27N120BN	Onsemi	N-CHANNEL	SINGLE	NO	500 W	72 A	PLASTIC/EPOXY	MOTOR CONTROL	25 ns	4.2 V	THROUGH-HOLE	RECTANGULAR	1	200 ns	360 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V	53 ns	-55 Cel	20 V	480 ns			SINGLE	R-PSFM-T3		COLLECTOR		AVALANCHE RATED	TO-247				42 ns
FGA30S120P	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	60 A	PLASTIC/EPOXY	POWER CONTROL	490 ns		THROUGH-HOLE	RECTANGULAR	1	350 ns		3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	1300 V			25 V		7.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3						e3	NOT SPECIFIED	NOT SPECIFIED
NXH160T120L2Q2F2S1G	Onsemi	N-CHANNEL	COMPLEX	NO	500 W	181 A	UNSPECIFIED	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	4		435 ns	56	FLANGE MOUNT			125 Cel	SILICON	1200 V		-40 Cel	20 V		6.4 V		UPPER	R-XUFM-X56		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	150 ns
IKY40N120CS6	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.15 V	THROUGH-HOLE	RECTANGULAR	1		445 ns	4	FLANGE MOUNT			175 Cel	SILICON	1200 V		-40 Cel	20 V		6.3 V	TIN	SINGLE	R-PSFM-T4					TO-247	e3			56 ns
F3L150R12W2H3_B11	Infineon Technologies	N-CHANNEL	COMPLEX	NO	500 W		UNSPECIFIED	POWER CONTROL		1.75 V	UNSPECIFIED	RECTANGULAR	4		510 ns	32	FLANGE MOUNT			150 Cel	SILICON	1200 V		-40 Cel	20 V		6.35 V		UPPER	R-XUFM-X32		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	210 ns	UL APPROVED
BSM50GB160D	Infineon Technologies				500 W	70 A							1					Insulated Gate BIP Transistors		150 Cel		1600 V			20 V
BSM50GB170DN2	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	500 W	72 A	UNSPECIFIED	POWER CONTROL		3.9 V	UNSPECIFIED	RECTANGULAR	2		740 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1700 V			20 V				UPPER	R-XUFM-X7		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	500 ns
BSM50GAL120D	Infineon Technologies	N-CHANNEL		NO	500 W	70 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR			600 ns		FLANGE MOUNT	Other Transistors			SILICON	1200 V							UPPER	R-XUFM-X		ISOLATED							170 ns
GA200SA60UP	Infineon Technologies				500 W	200 A				1.9 V			1					Insulated Gate BIP Transistors		150 Cel		600 V			20 V
IKY40N120CH3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.35 V	THROUGH-HOLE	RECTANGULAR	1		439 ns	4	FLANGE MOUNT			175 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V	TIN	SINGLE	R-PSFM-T4					TO-247	e3			61 ns
BSM50GB120D	Infineon Technologies				500 W	50 A				2.8 V			1					Insulated Gate BIP Transistors				1200 V
BSM50GAL100D	Infineon Technologies				500 W	50 A				3.3 V			1					Insulated Gate BIP Transistors		150 Cel		1000 V			20 V
SP000100432	Infineon Technologies	N-Channel	2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	500 W	100 A	UNSPECIFIED	POWER CONTROL		3.75 V	UNSPECIFIED	RECTANGULAR	4		390 ns	24	FLANGE MOUNT			125 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X24		ISOLATED							190 ns
SP000485594	Infineon Technologies	N-Channel			500 W	135 A				2.15 V					600 ns					150 Cel	SILICON	1200 V		-40 Cel	20 V		6.4 V					ISOLATED							190 ns
SP000101744	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO	500 W	70 A	UNSPECIFIED	POWER CONTROL		2.75 V	UNSPECIFIED	RECTANGULAR	1			19	FLANGE MOUNT			150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X19		ISOLATED								UL RECOGNIZED
F475R12MS4BOMA1	Infineon Technologies	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	500 W	100 A	UNSPECIFIED	POWER CONTROL		3.75 V	UNSPECIFIED	RECTANGULAR	4		390 ns	14	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X14		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	190 ns	UL APPROVED
IKW40N120CS6	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.15 V	THROUGH-HOLE	RECTANGULAR	1		445 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V		-40 Cel	20 V		6.3 V	TIN	SINGLE	R-PSFM-T3					TO-247	e3			65 ns
FS75R12KS4	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	500 W	100 A	UNSPECIFIED			3.7 V	UNSPECIFIED	RECTANGULAR	6		390 ns	39	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X39		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	190 ns
IKQ40N120CH3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.35 V	THROUGH-HOLE	RECTANGULAR	1		444 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V	TIN	SINGLE	R-PSFM-T3					TO-247	e3			76 ns
FS100R12PT4	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	500 W	135 A	UNSPECIFIED	POWER CONTROL		2.15 V	UNSPECIFIED	RECTANGULAR	6		600 ns	13	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X13	1	ISOLATED	Not Qualified					260	190 ns
IKQ40N120CT2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.15 V	THROUGH-HOLE	RECTANGULAR	1		530 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V	TIN	SINGLE	R-PSFM-T3		ISOLATED			TO-247	e3			74 ns
F4-75R12MS4	Infineon Technologies	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	500 W	100 A	UNSPECIFIED			3.75 V	UNSPECIFIED	RECTANGULAR	4		390 ns	14	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X14		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	190 ns
MG30V2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	500 W	30 A	UNSPECIFIED	MOTOR CONTROL		4.5 V	UNSPECIFIED	RECTANGULAR	2	1500 ns	400 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	500 W	150 Cel	SILICON	1700 V			20 V		8 V		UPPER	R-XUFM-X7		ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	100 ns
IXGQ240N30PB	Littelfuse	N-CHANNEL	SINGLE	NO	500 W	240 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		203 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	300 V			20 V		5 V	PURE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified			e3	NOT SPECIFIED	NOT SPECIFIED	133 ns
MWI75-12A8	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	500 W	125 A	UNSPECIFIED	POWER CONTROL		2.6 V	UNSPECIFIED	RECTANGULAR	6		700 ns	33	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1200 V			20 V			MATTE TIN OVER NICKEL	UPPER	R-XUFM-X33		ISOLATED	Not Qualified	ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE		e3			150 ns
IXYA30N120A4HV	Littelfuse	N-CHANNEL	SINGLE	YES	500 W	106 A	PLASTIC/EPOXY	POWER CONTROL		1.9 V	GULL WING	RECTANGULAR	1		586 ns	2	SMALL OUTLINE			175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	10	260	46 ns
IXYP30N120A4	Littelfuse	N-CHANNEL	SINGLE	NO	500 W	106 A	PLASTIC/EPOXY	POWER CONTROL		1.9 V	THROUGH-HOLE	RECTANGULAR	1		586 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				46 ns
IXBH42N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	104 A	PLASTIC/EPOXY	POWER CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		950 ns	3	FLANGE MOUNT			150 Cel	SILICON	3000 V		-55 Cel	25 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				652 ns
IXXN100N60B3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	170 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	UNSPECIFIED	RECTANGULAR	1		350 ns	4	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V		UPPER	R-PUFM-X4		ISOLATED							92 ns	UL RECOGNIZED
IXYH40N90C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	90 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		237 ns	3	FLANGE MOUNT			150 Cel	SILICON	900 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	81 ns
IXYH30N120C4	Littelfuse	N-CHANNEL	SINGLE	NO	500 W	94 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		360 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				56 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.