55 W Insulated Gate Bipolar Transistors (IGBT) 23

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
STGD5NB120SZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	55 W	10 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		14100 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-252AA	e3	30	260	850 ns
FB10R06KL4GB1	Infineon Technologies	N-CHANNEL	COMPLEX	NO	55 W	15 A	UNSPECIFIED			2.55 V	UNSPECIFIED	RECTANGULAR	7		260 ns	22	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			MATTE TIN	UPPER	R-XUFM-X22		ISOLATED	Not Qualified			e3			58 ns
FB10R06KL4G	Infineon Technologies	N-CHANNEL	COMPLEX	NO	55 W	15 A	UNSPECIFIED			2.55 V	UNSPECIFIED	RECTANGULAR	6		260 ns	19	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V				UPPER	R-XUFM-X19		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	58 ns
STGD7NB60ST4	STMicroelectronics	N-CHANNEL	SINGLE	YES	55 W	15 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1			2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-252AA	e3	30	260	1160 ns
MP6750	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	55 W	15 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	THROUGH-HOLE	RECTANGULAR	6	350 ns		11	FLANGE MOUNT	Insulated Gate BIP Transistors	55 W	150 Cel	SILICON	600 V		20 V		6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T11		ISOLATED	Not Qualified	HIGH SPEED		e0
TIG111GMH	Onsemi	N-CHANNEL		NO	55 W	32 A												Insulated Gate BIP Transistors		150 Cel		600 V		30 V		6 V
SGS10N60RUFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	16 A	PLASTIC/EPOXY	POWER CONTROL		2.8 V	THROUGH-HOLE	RECTANGULAR	1	350 ns	284 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	410 ns	8.5 V		SINGLE	R-PSFM-T3		ISOLATED		LOW CONDUCTION LOSS	TO-220AB				49 ns
STGD7NB60H	STMicroelectronics	N-CHANNEL	SINGLE	YES	55 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		220 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-252AA	e3			63 ns
STGD7NB120S-1	STMicroelectronics	N-CHANNEL	SINGLE	NO	55 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1			3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		5 V	TIN LEAD	SINGLE	R-PSIP-T3			Not Qualified		TO-251	e0			840 ns
STGD5NB120SZ	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	55 W	10 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		14100 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-252AA	e3			850 ns
STGD7NB60HT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	55 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		220 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-252	e0			63 ns
STGD7NB60H-1	STMicroelectronics	N-CHANNEL	SINGLE	NO	55 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		220 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5 V		SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified		TO-251AA				63 ns
STGD7NB60K	STMicroelectronics	N-CHANNEL	SINGLE	YES	55 W	14 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		202 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		7 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e3			21 ns
STGD5NB120SZ-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	55 W	10 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		14100 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		5 V	TIN	SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified		TO-251AA	e3			850 ns
FB10R06KL4	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	55 W	16 A	UNSPECIFIED			2.55 V	UNSPECIFIED	RECTANGULAR	6		260 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V		20 V				UPPER	R-XUFM-X17		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	60 ns
FP10R06KL4	Infineon Technologies	N-CHANNEL	COMPLEX	NO	55 W	16 A	UNSPECIFIED			2.55 V	UNSPECIFIED	RECTANGULAR	7		260 ns	23	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V				UPPER	R-XUFM-X23		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	60 ns
FP10R12KE3	Infineon Technologies	N-CHANNEL	COMPLEX	NO	55 W	15 A	UNSPECIFIED			2.45 V	UNSPECIFIED	RECTANGULAR	7		481 ns	23	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X23		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	80 ns
MIG15J855E	Toshiba				55 W	15 A				2.8 V			1					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
MIG15J805E	Toshiba				55 W	15 A				2.8 V			1					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
GT15M321	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	15 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	400 ns	500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	900 V		25 V			TIN LEAD	SINGLE	R-PSFM-T3			Not Qualified	HIGH SPEED		e0			300 ns
MIG15J855	Toshiba			NO	55 W	15 A	UNSPECIFIED			2.8 V	THROUGH-HOLE	RECTANGULAR	1			20	IN-LINE	Insulated Gate BIP Transistors		150 Cel		600 V		20 V				DUAL	R-XDIP-T20			Not Qualified
MIG15J805	Toshiba			NO	55 W	15 A	UNSPECIFIED			2.8 V	THROUGH-HOLE	RECTANGULAR	1			20	IN-LINE	Insulated Gate BIP Transistors		150 Cel		600 V		20 V				DUAL	R-XDIP-T20			Not Qualified
RJH60D7DPM-00#T1	Renesas Electronics	N-CHANNEL		NO	55 W	90 A												Insulated Gate BIP Transistors		150 Cel		600 V		30 V		6 V										NOT SPECIFIED	NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.