6250 W Insulated Gate Bipolar Transistors (IGBT) 18

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FF1000R17IE4DB2BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

6250 W

1390 A

PLASTIC/EPOXY

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

2

1400 ns

12

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X12

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

760 ns

FF1200R17KP4_B2

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

6250 W

1700 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

2

2230 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X10

1

ISOLATED

Not Qualified

260

1050 ns

FF800R17KF6CB2

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

6250 W

1300 A

UNSPECIFIED

3.1 V

UNSPECIFIED

RECTANGULAR

2

1240 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

Matte Tin (Sn)

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

e3

540 ns

FD1000R17IE4DB2BOSA1

Infineon Technologies

N-Channel

6250 W

1390 A

2.45 V

1910 ns

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

830 ns

DF1000R17IE4D_B2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

6250 W

1390 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1910 ns

12

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X12

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

830 ns

FF800R17KF6CB2NOSA1

Infineon Technologies

N-Channel

6250 W

1300 A

3.1 V

1240 ns

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

540 ns

FD1000R17IE4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

6250 W

1390 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1890 ns

12

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X12

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

720 ns

DF1000R17IE4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

6250 W

1390 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1890 ns

12

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X12

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

720 ns

DF1000R17IE4DB2BOSA1

Infineon Technologies

N-Channel

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

6250 W

1390 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1910 ns

12

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X12

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

830 ns

FD800R17KF6CB2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

6250 W

1300 A

UNSPECIFIED

3.1 V

UNSPECIFIED

RECTANGULAR

1

1240 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

Matte Tin (Sn)

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e3

540 ns

2PS12017E44G35911NOSA1

Infineon Technologies

N-Channel

6250 W

1700 A

2.2 V

2380 ns

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1060 ns

FF800R17KF6B2

Infineon Technologies

6250 W

1600 A

3.1 V

2

Insulated Gate BIP Transistors

125 Cel

1700 V

20 V

FD800R17KF6B2

Infineon Technologies

6250 W

800 A

3.1 V

1

Insulated Gate BIP Transistors

125 Cel

1700 V

20 V

SP000626668

Infineon Technologies

N-Channel

6250 W

1390 A

2.45 V

1910 ns

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

ISOLATED

830 ns

SP000614736

Infineon Technologies

N-Channel

6250 W

1390 A

2.45 V

1890 ns

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

ISOLATED

720 ns

FF1000R17IE4

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

6250 W

1390 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

2

1890 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

720 ns

FF1000R17IE4F

Infineon Technologies

N-Channel

6250 W

1390 A

2.45 V

1890 ns

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

ISOLATED

720 ns

FF1000R17IE4D-B2

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

6250 W

4000 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

2

1910 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X10

1

Not Qualified

260

830 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.