Infineon Technologies - 2PS12017E44G35911NOSA1

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2PS12017E44G35911NOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number 2PS12017E44G35911NOSA1
Description N-Channel; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1700 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn On Time (ton): 1060 ns; Nominal Turn Off Time (toff): 2380 ns;
Datasheet 2PS12017E44G35911NOSA1 Datasheet
In Stock2,415
NAME DESCRIPTION
Other Names: SP000895508
2PS12017E44G35911
2PS12017E44G35911-ND
Maximum Collector Current (IC): 1700 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 2380 ns
Maximum Power Dissipation (Abs): 6250 W
Maximum Collector-Emitter Voltage: 1700 V
Nominal Turn On Time (ton): 1060 ns
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.2 V
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