78 W Insulated Gate Bipolar Transistors (IGBT) 11

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
FP20R06KL4	Infineon Technologies	N-CHANNEL	COMPLEX	NO	78 W	25 A	UNSPECIFIED		2.55 V	UNSPECIFIED	RECTANGULAR	7		185 ns	23	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	20 V			UPPER	R-XUFM-X23		ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	60 ns
FB20R06KL4B1	Infineon Technologies				78 W	25 A			2.55 V			1					Insulated Gate BIP Transistors	125 Cel		600 V	20 V
FS10R12YT3	Infineon Technologies	N-CHANNEL	COMPLEX	NO	78 W	16 A	UNSPECIFIED		2.45 V	UNSPECIFIED	RECTANGULAR	6		500 ns	22	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	20 V			UPPER	R-XUFM-X22		ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	75 ns
FP10R12W1T3	Infineon Technologies	N-CHANNEL	COMPLEX	NO	78 W	16 A	UNSPECIFIED		2.45 V	UNSPECIFIED	RECTANGULAR	7		540 ns	23	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	20 V			UPPER	R-XUFM-X23		ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	70 ns
IRG7RA13UTRRPBF	Infineon Technologies	N-CHANNEL		YES	78 W	40 A											Insulated Gate BIP Transistors	150 Cel		360 V	30 V	4.7 V
IRG7RA13UPBF	Infineon Technologies	N-CHANNEL		YES	78 W	40 A											Insulated Gate BIP Transistors	150 Cel		360 V	30 V	4.7 V
IRG7RA13UTRPBF	Infineon Technologies	N-CHANNEL		YES	78 W	40 A											Insulated Gate BIP Transistors	150 Cel		360 V	30 V	4.7 V
IRG4BAC50S	Infineon Technologies	N-CHANNEL	SINGLE	NO	78 W	70 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	600 ns	1700 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	20 V	6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified	TO-273AA	e3			62 ns
FS10R06VL4B2	Infineon Technologies				78 W	16 A			2.55 V			1					Insulated Gate BIP Transistors	125 Cel		600 V	20 V
IRG7R313UTRRPBF	Infineon Technologies	N-CHANNEL		YES	78 W	40 A											Insulated Gate BIP Transistors	150 Cel		330 V	30 V	4.7 V
IRG7S313UTRRPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	78 W	40 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		276 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	330 V	30 V	4.7 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	TO-263AB	e3			25 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.