Infineon Technologies - IRG7RA13UTRRPBF

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IRG7RA13UTRRPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG7RA13UTRRPBF
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 78 W; Maximum Collector Current (IC): 40 A; Maximum Collector-Emitter Voltage: 360 V; Maximum Gate-Emitter Threshold Voltage: 4.7 V;
Datasheet IRG7RA13UTRRPBF Datasheet
In Stock235
NAME DESCRIPTION
Maximum Collector Current (IC): 40 A
Maximum Power Dissipation (Abs): 78 W
Maximum Collector-Emitter Voltage: 360 V
Maximum Gate-Emitter Threshold Voltage: 4.7 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 30 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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