Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
60 W |
11 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
730 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
e3 |
80 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
89 W |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
590 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
30 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AC |
40 ns |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
460 W |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
143 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
300 V |
-55 Cel |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
10 |
260 |
78 ns |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
75 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
920 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e3 |
10 |
260 |
90 ns |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
300 W |
120 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.35 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
925 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-247AD |
e3 |
10 |
260 |
54 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
48 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.35 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
925 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-247AD |
e3 |
10 |
260 |
54 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
400 W |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
820 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
900 V |
-55 Cel |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
e3 |
10 |
260 |
48 ns |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
880 W |
235 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.35 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
160 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
e3 |
10 |
260 |
71 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
223 W |
100 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
6.5 V |
Tin (Sn) |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
178 W |
36 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
235 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
30 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
36 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
235 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
30 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
40 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
313 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
66 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
46 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
862 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
e3 |
86 ns |
|||||||||||||||||||||||||
|
Semikron International |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
102 A |
UNSPECIFIED |
2.05 V |
UNSPECIFIED |
RECTANGULAR |
6 |
601 ns |
13 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
128 ns |
||||||||||||||||||||||||
|
Semikron International |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
87 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
601 ns |
22 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
128 ns |
IEC-60747-1; UL RECOGNIZED |
||||||||||||||||||||||
|
Semikron International |
N-CHANNEL |
COMPLEX |
NO |
25 A |
UNSPECIFIED |
POWER CONTROL |
1.85 V |
UNSPECIFIED |
RECTANGULAR |
7 |
200 ns |
18 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X18 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
NOT SPECIFIED |
NOT SPECIFIED |
50 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Semikron International |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
73 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
530 ns |
42 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
TIN/SILVER |
UPPER |
R-XUFM-X42 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e3/e4 |
NOT SPECIFIED |
NOT SPECIFIED |
115 ns |
UL RECOGNIZED |
|||||||||||||||||||
|
Semikron International |
N-CHANNEL |
COMPLEX |
NO |
73 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
7 |
520 ns |
30 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X30 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
115 ns |
IEC-60747-1; UL RECOGNIZED |
||||||||||||||||||||||
|
Semikron International |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
157 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
600 ns |
68 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
TIN/SILVER |
UPPER |
R-XUFM-X68 |
ISOLATED |
Not Qualified |
e3/e4 |
NOT SPECIFIED |
NOT SPECIFIED |
120 ns |
UL RECOGNIZED |
||||||||||||||||||||
|
Semikron International |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
390 A |
UNSPECIFIED |
POWER CONTROL |
1.9 V |
UNSPECIFIED |
RECTANGULAR |
2 |
593 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
TIN/SILVER |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
e3/e4 |
NOT SPECIFIED |
NOT SPECIFIED |
198 ns |
UL RECOGNIZED |
||||||||||||||||||||
|
Semikron International |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
300 A |
UNSPECIFIED |
POWER CONTROL |
3.85 V |
UNSPECIFIED |
RECTANGULAR |
2 |
490 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
TIN SILVER |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
e2 |
170 ns |
UL RECOGNIZED |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
3100 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
1160 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
45 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
178 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
26 ns |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
250 W |
90 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
310 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
330 V |
20 V |
5.5 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
115 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
260 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
27 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
NO |
168 W |
40 A |
Insulated Gate BIP Transistors |
175 Cel |
650 V |
20 V |
7 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
285 ns |
3 |
FLANGE MOUNT |
SILICON |
1250 V |
-55 Cel |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
260 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
223 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
51.1 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
468 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
351 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
56 ns |
||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
862 W |
149 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
420 ns |
4 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6 V |
NICKEL |
UPPER |
R-PUFM-X4 |
ISOLATED |
293 ns |
UL RECOGNIZED |
|||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
658 W |
139 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
436 ns |
4 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
199 ns |
UL RECOGNIZED |
||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
781 W |
169 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.6 V |
UNSPECIFIED |
RECTANGULAR |
1 |
270 ns |
4 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7.6 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
61 ns |
UL APPROVED |
|||||||||||||||||||||||
|
Fuji Electric |
N-CHANNEL |
COMPLEX |
NO |
885 W |
150 A |
UNSPECIFIED |
POWER CONTROL |
2.9 V |
UNSPECIFIED |
RECTANGULAR |
7 |
530 ns |
22 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
390 ns |
||||||||||||||||||||||
|
Fuji Electric |
N-CHANNEL |
COMPLEX |
NO |
75 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
530 ns |
24 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
600 ns |
||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
268 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.4 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
AEC-Q101 |
||||||||||||||||||||
|
Alpha & Omega Semiconductor |
N-CHANNEL |
NO |
208 W |
60 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
||||||||||||||||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE |
NO |
54 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
220 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AA |
e1 |
41 ns |
|||||||||||||||||||||||||
|
Microsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
54 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
412 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e1 |
45 ns |
|||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
54 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
412 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e1 |
45 ns |
|||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
64 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
220 ns |
4 |
FLANGE MOUNT |
150 Cel |
SILICON |
900 V |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
37 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
329 W |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
230 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
30 V |
TIN SILVER COPPER |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS |
e1 |
47 ns |
||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
347 W |
75 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
1 |
610 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
AVALANCHE RATED, LOW CONDUCTION LOSS |
NOT SPECIFIED |
NOT SPECIFIED |
135 ns |
|||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
379 W |
105 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
320 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
TIN SILVER COPPER |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
e1 |
51 ns |
|||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
225 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
4 |
370 ns |
14 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
TIN SILVER COPPER |
UPPER |
R-XUFM-X14 |
1 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
e1 |
180 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
48 A |
PLASTIC/EPOXY |
POWER CONTROL |
31 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
41 ns |
164 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
64 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
330 W |
96 A |
PLASTIC/EPOXY |
POWER CONTROL |
56 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
46 ns |
210 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
330 W |
96 A |
PLASTIC/EPOXY |
POWER CONTROL |
56 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
46 ns |
210 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
|||||||||||||||||||
Mitsubishi Electric |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
6900 W |
1200 A |
UNSPECIFIED |
POWER CONTROL |
2.8 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1500 ns |
10 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X10 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1400 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.