NO Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FPF1C2P5MF07AM

Onsemi

N-CHANNEL

COMPLEX

NO

231 W

39 A

UNSPECIFIED

POWER CONTROL

1.6 V

UNSPECIFIED

RECTANGULAR

2

24

FLANGE MOUNT

150 Cel

SILICON

620 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X24

UL APPROVED

FS50R12KE3BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

75 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

610 ns

28

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

FT150R12KE3GB4BDLA1

Infineon Technologies

N-CHANNEL

COMMON COLLECTOR, 3 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

NO

200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

850 ns

39

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X39

ISOLATED

350 ns

FZ800R12KL4CNOSA1

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1300 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1100 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

450 ns

GT20J321

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

340 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

HIGH SPEED

170 ns

HGTG7N60A4D

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

34 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

85 ns

205 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

235 ns

7 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247

e3

17 ns

IRG4IBC20KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

34 W

11.5 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

110 ns

380 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

88 ns

IRGB4056DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

24 A

PLASTIC/EPOXY

POWER CONTROL

24 ns

THROUGH-HOLE

RECTANGULAR

1

31 ns

143 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

48 ns

IXGH30N120B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

30 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

380 ns

331 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

580 ns

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

53 ns

IXXH100N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

220 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

92 ns

MG06100S-BR1MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

150 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

390 ns

7

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

95 ns

UL RECOGNIZED

NGTB40N120S3WG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

454 W

160 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

TO-247

e3

RGW80TS65CHRC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

214 W

81 A

PLASTIC/EPOXY

POWER CONTROL

1.9 V

THROUGH-HOLE

RECTANGULAR

1

185 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

30 V

7 V

SINGLE

R-PSFM-T3

TO-247

54 ns

AEC-Q101

SGP15N120XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

683 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

68 ns

STGIPL14K60

STMicroelectronics

N-CHANNEL

COMPLEX

NO

44 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

6

425 ns

38

IN-LINE

Insulated Gate BIP Transistors

125 Cel

SILICON

600 V

MATTE TIN

DUAL

R-PDIP-T38

ISOLATED

Not Qualified

e3

400 ns

STGP15M120F3

STMicroelectronics

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

406 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

39 ns

STGW45HF60WD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

250 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS

TO-247

NOT SPECIFIED

NOT SPECIFIED

44 ns

STGW45HF60WDI

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

STGWA40M120DF3

STMicroelectronics

N-CHANNEL

NO

468 W

80 A

Insulated Gate BIP Transistors

175 Cel

1200 V

20 V

7 V

NOT SPECIFIED

NOT SPECIFIED

2PS18012E44G38553NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

8

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1200 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

APT100GN60B2G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

229 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

435 ns

3

IN-LINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

30 V

6.5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

HIGH RELIABILITY

e1

96 ns

APT150GN60JDQ4

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

536 W

220 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

575 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

30 V

6.5 V

TIN SILVER COPPER

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

HIGH RELIABILITY

e1

154 ns

UL RECOGNIZED

APT200GN60J

Microchip Technology

N-CHANNEL

SINGLE

NO

682 W

250 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1210 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

TIN SILVER COPPER

UPPER

R-PUFM-X4

1

ISOLATED

Not Qualified

e1

75 ns

APT45GP120J

Microchip Technology

N-CHANNEL

SINGLE

NO

329 W

75 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

230 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6 V

TIN SILVER COPPER

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

e1

47 ns

APT50GP60BG

Microchip Technology

N-CHANNEL

SINGLE

NO

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AD

e1

55 ns

APT50GP60JDQ2

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

329 W

100 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

200 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

TIN SILVER COPPER

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

e1

55 ns

APT80GP60B2G

Microchip Technology

N-CHANNEL

SINGLE

NO

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

284 ns

3

IN-LINE

150 Cel

SILICON

600 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e1

87 ns

APT85GR120J

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

543 W

116 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

445 ns

4

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

30 V

6.5 V

UPPER

R-PUFM-X4

ISOLATED

113 ns

UL RECOGNIZED

APTGT300A60TG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

430 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

370 ns

9

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

180 ns

AUIRGB4062D1

Infineon Technologies

N-CHANNEL

NO

246 W

59 A

41 ns

40 ns

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

AUIRGP4066D1-E

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

454 W

140 A

PLASTIC/EPOXY

POWER CONTROL

100 ns

THROUGH-HOLE

RECTANGULAR

1

80 ns

320 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

30

250

115 ns

CPV364M4FPBF

Vishay Intertechnology

N-CHANNEL

COMPLEX

NO

63 W

27 A

UNSPECIFIED

POWER CONTROL

1.5 V

THROUGH-HOLE

RECTANGULAR

6

700 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-XSFM-T13

ISOLATED

Not Qualified

ULTRA FAST SOFT

NOT SPECIFIED

NOT SPECIFIED

58 ns

FD200R12KE3PHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

830 ns

5

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X5

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

400 ns

UL RECOGNIZED

FF1000R17IE4DB2BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

6250 W

1390 A

PLASTIC/EPOXY

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

2

1400 ns

12

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X12

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

760 ns

FF225R12MS4BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

275 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

590 ns

11

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

180 ns

FGA90N30D

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

219 W

90 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

310 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

300 V

30 V

5 V

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS

240 ns

FGA90N30DTU

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

219 W

90 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

310 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

300 V

30 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS

e3

240 ns

FP10R12W1T4PB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

500 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

108 ns

FP10R12W1T4PBPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

500 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

108 ns

FP35R12KT4BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

620 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

FP40R12KT3BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

55 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

FP50R12KT4GB15BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

FPF2G120BF07ASP

Onsemi

N-CHANNEL

SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

156 W

40 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

3

165 ns

32

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.8 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

49 ns

FS150R12KT3

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

700 W

200 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

610 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

FS25R12KE3GBOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

40 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

610 ns

28

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

FS25R12YT3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

165 W

40 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

640 ns

22

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X22

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

120 ns

FZ1200R45HL3BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

6670 ns

9

FLANGE MOUNT

SILICON

4500 V

-40 Cel

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1100 ns

IEC-1287

IKA10N65ET6XKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32.5 W

25 A

PLASTIC/EPOXY

POWER CONTROL

1.9 V

THROUGH-HOLE

RECTANGULAR

1

195 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

45 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.