NO Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

CM300DY-24H

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

2100 W

300 A

UNSPECIFIED

MOTOR CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

2

350 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

SUPER FAST RECOVERY

NOT SPECIFIED

NOT SPECIFIED

250 ns

CM300DY-24NF

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1130 W

300 A

UNSPECIFIED

MOTOR CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

260

DF900R12IP4DVBOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

PLASTIC/EPOXY

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

1

1300 ns

10

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-PUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

370 ns

UL APPROVED

F4150R17ME4B11BPSA1

Infineon Technologies

N-CHANNEL

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

230 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

780 ns

13

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-XUFM-X13

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

270 ns

UL RECOGNIZED

F4250R17MP4B11BPSA1

Infineon Technologies

N-CHANNEL

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

370 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

1030 ns

13

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-XUFM-X13

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

480 ns

UL RECOGNIZED

FD900R12IP4DVBOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

PLASTIC/EPOXY

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

1

1300 ns

10

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-PUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

370 ns

UL RECOGNIZED

FF1000R17IE4DPB2BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1910 ns

12

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-PUFM-X12

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

830 ns

UL APPROVED

FF150R12KS4HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

225 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

590 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

FAST

NOT SPECIFIED

NOT SPECIFIED

180 ns

FF200R12KE4HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

240 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

800 ns

5

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

325 ns

FF200R12KT3EHOSA1

Infineon Technologies

N-CHANNEL

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE

NO

580 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

680 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

215 ns

UL RECOGNIZED

FF200R17KE4HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

310 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1400 ns

5

FLANGE MOUNT

175 Cel

SILICON

1700 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

365 ns

FF300R12KE4B2HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

460 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

800 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

325 ns

UL RECOGNIZED

FF450R17ME4PB11BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

600 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1600 ns

11

FLANGE MOUNT

175 Cel

SILICON

1700 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

380 ns

FF600R06ME3BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

700 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

805 ns

11

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

220 ns

FF600R12IP4VBOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

3350 W

PLASTIC/EPOXY

2.05 V

UNSPECIFIED

RECTANGULAR

2

1050 ns

10

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-PUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

370 ns

FF600R12KE4BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

630 ns

7

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

232 ns

UL APPROVED

FGA180N33ATDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

362 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS

e3

101 ns

FGA50N100BNTDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156 W

50 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

250 ns

760 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

25 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

e3

460 ns

FGH20N60SFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

165 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

48 ns

123 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AB

e3

28 ns

FGH60N60SFDTU_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

378 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

62 ns

166 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

6.6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

RC-IGBT

TO-247

e3

76 ns

AEC-Q101

FGH60N60SFDTU-F085

Onsemi

N-CHANNEL

SINGLE

NO

378 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

62 ns

166 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

6.6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

RC-IGBT

TO-247

e3

76 ns

AEC-Q101

FGH75N60UFTU

Onsemi

N-CHANNEL

NO

452 W

150 A

80 ns

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

MATTE TIN

e3

FGHL50T65SQDT

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

159 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

e3

40.4 ns

FGW40N120HD

Fujitsu

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

340 W

70 A

PLASTIC/EPOXY

POWER CONTROL

2.34 V

THROUGH-HOLE

RECTANGULAR

1

355 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

SINGLE

R-PSFM-T3

HIGH RELIABILITY

TO-247

95 ns

FGY75N60SMD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

750 W

150 A

PLASTIC/EPOXY

POWER CONTROL

73 ns

THROUGH-HOLE

RECTANGULAR

1

29 ns

161 ns

3

IN-LINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

LOW CONDUCTION LOSS

e3

76 ns

FP30R06KE3BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

37 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

750 ns

24

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

170 ns

FS100R06KE3BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

370 ns

35

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

FS450R12OE4BOSA1

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

2250 W

660 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

680 ns

29

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X29

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

290 ns

UL APPROVED

FS50R12KT4B11BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

490 ns

25

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X25

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

185 ns

UL APPROVED

FS50R12W2T4BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

83 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

490 ns

15

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

185 ns

FZ1200R17HP4B2BOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1810 ns

7

FLANGE MOUNT

SILICON

1700 V

UPPER

R-PUFM-X7

1

ISOLATED

850 ns

FZ1200R17KF4C

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1200 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1600 ns

7

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X7

ISOLATED

1000 ns

FZ1600R12HP4HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

4930 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1550 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X9

1

ISOLATED

890 ns

FZ400R12KE3B1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2250 W

650 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

1

830 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

400 ns

FZ400R12KS4PHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

510 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

590 ns

5

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

180 ns

FZ750R65KE3NOSA1

Infineon Technologies

N-CHANNEL

PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

8100 ns

9

FLANGE MOUNT

150 Cel

SILICON

6500 V

UPPER

R-XUFM-X9

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1200 ns

HGTG12N60C3D

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

24 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

480 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS

TO-247

e3

30 ns

HGTG40N60C3R

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

460 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS

TO-247

71 ns

HGTP5N120BND

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

21 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

357 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

e3

35 ns

IGP10N60TXKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

296 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

21 ns

IGW25N120H3XK

Infineon Technologies

N-CHANNEL

SINGLE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

397 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

TO-247

61 ns

IGW40N120H3XK

Infineon Technologies

N-CHANNEL

SINGLE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

414 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

78 ns

IGW40N65F5FKSA1

Infineon Technologies

N-CHANNEL

NO

255 W

74 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

4.8 V

TIN

e3

IGW40T120FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

92 ns

IGW75N65H5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

120 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

232 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

61 ns

IHW20N65R5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

38 ns

IKP30N65F5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

55 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

206 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

28 ns

IKW30N60TA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

187 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

382 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

50 ns

AEC-Q101

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.