Infineon Technologies - FZ1200R17HP4B2BOSA2

  1. Home
  2. Infineon Technologies - FZ1200R17HP4B2BOSA2
FZ1200R17HP4B2BOSA2 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number FZ1200R17HP4B2BOSA2
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector-Emitter Voltage: 1700 V; Terminal Position: UPPER; Package Style (Meter): FLANGE MOUNT;
Datasheet FZ1200R17HP4B2BOSA2 Datasheet
In Stock2
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 1810 ns
No. of Terminals: 7
Maximum Collector-Emitter Voltage: 1700 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 850 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X7
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Case Connection: ISOLATED
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2 - -

Popular Products

Category Top Products

FS450R17KE3 by Infineon Technologies

FS450R17KE3

Infineon Technologies

FS450R17KE3 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements, 1700V VCEsat, and 605A IC. It features a rectangular package style, 2250W power dissipation, and operates up to 150°C. Ideal for high-power applications requiring fast turn-on/off times and high collector current capabilities.
IRGP4263PBF by International Rectifier

IRGP4263PBF

International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 90 A; Maximum Fall Time (tf): 50 ns; Maximum Gate-Emitter Threshold Voltage: 7.7 V;
SKM200GB12E4 by Semikron International

SKM200GB12E4

Semikron International

SKM200GB12E4 by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 2.05V, IC of 313A, and toff of 597ns. Ideal for POWER CONTROL applications, it operates b/w -40 to 175°C with a VCEmax of 1200V.
IRG4PC30UPBF by Infineon Technologies

IRG4PC30UPBF

Infineon Technologies

IRG4PC30UPBF by Infineon is an N-CHANNEL IGBT with 600V VCE, 23A IC, and 100W Ptot. Ideal for POWER CONTROL applications due to its fast switching times (ton: 33ns, toff: 320ns) and high operating temperature of 150°C. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
FS400R07A3E3H6BPSA1 by Infineon Technologies

FS400R07A3E3H6BPSA1

Infineon Technologies

Infineon Technologies' FS400R07A3E3H6BPSA1 is an N-Channel IGBT with a max VCEsat of 6.5V, nominal toff of 430ns, and max power dissipation of 811W. It is commonly used in applications requiring high collector-emitter voltage (705V) and current (5001A), such as power electronics and motor drives.
FF450R12KE4HOSA1 by Infineon Technologies

FF450R12KE4HOSA1

Infineon Technologies

Infineon's FF450R12KE4HOSA1 IGBT features N-CHANNEL polarity, 2 elements with diode in series configuration. With VCEsat of 2.15V and IC of 520A, it suits high-power applications like motor drives and renewable energy systems. Operating at up to 150°C, it offers fast turn-off time (toff) of 800ns for efficient power control.
FF450R12KT4F by Infineon Technologies

FF450R12KT4F

Infineon Technologies

Infineon's FF450R12KT4F is an N-Channel IGBT with VCEsat of 2.15V, IC of 580A, and Ptot of 2400W. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems due to its low turn-off time (720ns) and high collector-emitter voltage (1200V).
IHW25N120E1XKSA1 by Infineon Technologies

IHW25N120E1XKSA1

Infineon Technologies

IHW25N120E1XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and collector current of 50A. It has a turn off time of 1677ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations.
IKQ100N60TXKSA1 by Infineon Technologies

IKQ100N60TXKSA1

Infineon Technologies

IKQ100N60TXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 160A. It is designed for power control applications and has a nominal turn-off time of 393ns.
SK20DGDL065ET by Semikron International

SK20DGDL065ET

Semikron International

SK20DGDL065ET by Semikron International is an N-CHANNEL IGBT with 600V VCEsat, 24A IC, and 190ns toff. Ideal for POWER CONTROL applications due to its complex configuration and SILICON material. Package style is FLANGE MOUNT with 23 terminals and operates up to 150°C.
IXYP20N65C3D1M by IXYS Corporation

IXYP20N65C3D1M

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 18 A; Package Style (Meter): FLANGE MOUNT;
IRG4PC40UD-E by International Rectifier

IRG4PC40UD-E

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-247AD; Package Body Material: PLASTIC/EPOXY;
FGH60N60SMD-F085 by Onsemi

FGH60N60SMD-F085

Onsemi

FGH60N60SMD-F085 by Onsemi is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 600W Ptot. Ideal for power control applications due to its fast tr of 60ns and tf of 20ns. Its single configuration with built-in diode makes it suitable for high-power switching needs.
RGC80TSX8RGC11 by ROHM

RGC80TSX8RGC11

ROHM

ROHM RGC80TSX8RGC11 is an N-CHANNEL IGBT with 1800V VCE, 80A IC, and 535W power dissipation. Ideal for power control applications, it features a built-in diode, 725ns turn-off time, and -40 to 175°C operating temperature range.
APT100GN60LDQ4G by Microchip Technology

APT100GN60LDQ4G

Microchip Technology

Microchip Technology's APT100GN60LDQ4G is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 229A max collector current. Ideal for power control applications, it features a built-in diode, 96ns turn-on time, and 435ns turn-off time. Suitable for high-power systems requiring up to 625W dissipation in a flange mount package.
IKY75N120CH3XKSA1 by Infineon Technologies

IKY75N120CH3XKSA1

Infineon Technologies

IKY75N120CH3XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 150A max collector current. Ideal for power control applications, it has a single configuration with built-in diode and offers fast turn-off time of 468ns.
IRG4PC50UDPBF by International Rectifier

IRG4PC50UDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 55 A; No. of Terminals: 3;
SK15DGDL126ET by Semikron International

SK15DGDL126ET

Semikron International

SK15DGDL126ET by Semikron International is an N-CHANNEL IGBT with 1200V VCEsat, 22A IC, and 475ns toff. Ideal for POWER CONTROL applications due to its complex configuration and SILICON material. Package style is FLANGE MOUNT with 23 terminals and operates up to 150°C.
FZ600R17KE3S4HOSA1 by Infineon Technologies

FZ600R17KE3S4HOSA1

Infineon Technologies

Infineon Technologies' FZ600R17KE3S4HOSA1 is an N-CHANNEL IGBT with 1700V VCE, 840A IC, and 3150W power dissipation. Ideal for power control applications, it features a built-in diode, UL approval, and operates b/w -40 to 125°C.
FPF2G120BF07ASP by Fairchild Semiconductor

FPF2G120BF07ASP

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Maximum Collector Current (IC): 40 A; Transistor Element Material: SILICON;