NO Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IHW40N60RFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

264 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247AD

e3

IKA15N65F5XKSA1

Infineon Technologies

N-CHANNEL

NO

33.3 W

14 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

4.8 V

TIN

e3

IKFW40N60DH3EXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

111 W

34 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

184 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

50 ns

IKP03N120H2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

62.5 W

9.6 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

403 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

3.9 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

16.1 ns

IKP08N65F5XKSA1

Infineon Technologies

N-CHANNEL

NO

70 W

18 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

4.8 V

TIN

e3

IKP10N60TXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

296 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

21 ns

IKP20N60H3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

241 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

31 ns

IKP20N65H5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

42 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

218 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

28 ns

IKP40N65H5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

217 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

32 ns

IKQ40N120CT2XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

530 ns

3

FLANGE MOUNT

SILICON

1200 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

74 ns

IKQ50N120CT2XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

530 ns

3

FLANGE MOUNT

SILICON

1200 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

79 ns

IKW40N65H5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

217 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

32 ns

IKW40N65H5A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

204 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

32 ns

AEC-Q101

IKW40N65H5AXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

204 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

32 ns

AEC-Q101

IKW40T120FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

92 ns

IKW75N65EL5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

474 ns

3

FLANGE MOUNT

SILICON

650 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

53 ns

IKW75N65SS5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

166 ns

3

FLANGE MOUNT

175 Cel

SILICON CARBIDE

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

35 ns

IRG4BC40WPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

160 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

110 ns

174 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

49 ns

IRG4PC50SDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

1700 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

62 ns

IRG4PH40UPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

160 W

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

190 ns

690 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

3 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

49 ns

IRG7PH50UPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

556 W

140 A

PLASTIC/EPOXY

POWER CONTROL

60 ns

THROUGH-HOLE

RECTANGULAR

1

65 ns

710 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

30 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

75 ns

IXBF20N360

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

45 A

PLASTIC/EPOXY

POWER CONTROL

3.4 V

THROUGH-HOLE

RECTANGULAR

1

1285 ns

3

IN-LINE

150 Cel

SILICON

3600 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

ISOLATED

922 ns

IXBF32N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

40 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

795 ns

3

IN-LINE

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

ISOLATED

LOW CONDUCTION LOSS

573 ns

IXBX55N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

130 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

475 ns

3

IN-LINE

150 Cel

SILICON

3000 V

-55 Cel

25 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

637 ns

IXDH20N120D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

275 W

38 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

570 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW SATURATION VOLTAGE, LOW SWITCHING LOSSES

TO-247AD

e3

10

260

175 ns

IXEL40N400

Littelfuse

N-CHANNEL

SINGLE

NO

380 W

40 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

1170 ns

3

IN-LINE

Insulated Gate BIP Transistors

125 Cel

SILICON

4000 V

20 V

7 V

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

260 ns

UL RECOGNIZED

IXXH80N65B4H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

247 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

123 ns

IXXX140N65B4H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1200 W

340 A

PLASTIC/EPOXY

POWER CONTROL

1.9 V

THROUGH-HOLE

RECTANGULAR

1

340 ns

3

IN-LINE

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSIP-T3

COLLECTOR

128 ns

IXYB82N120C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1040 W

164 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

285 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

107 ns

IXYH30N65C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

120 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

59 ns

IXYL60N450

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN RESISTOR

NO

417 W

90 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

THROUGH-HOLE

RECTANGULAR

1

1580 ns

3

IN-LINE

150 Cel

SILICON

4500 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

ISOLATED

724 ns

MIXA80W1200TED

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

390 W

120 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

350 ns

21

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X21

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

UL RECOGNIZED

NGTB40N120FLWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

630 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

172 ns

NGTB40N120SWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

535 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

564 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

154 ns

NXH160T120L2Q2F2SG

Onsemi

N-CHANNEL

COMPLEX

NO

500 W

181 A

UNSPECIFIED

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

4

435 ns

56

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X56

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

150 ns

QID4515001

Powerex

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1440 W

150 A

PLASTIC/EPOXY

POWER CONTROL

500 ns

3.9 V

UNSPECIFIED

RECTANGULAR

2

1200 ns

8

FLANGE MOUNT

150 Cel

SILICON

4500 V

2000 ns

-40 Cel

20 V

4700 ns

7.5 V

UPPER

R-PUFM-X8

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IEC-60077-1; IEC-1287

SEMIX303GB12E4S

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

466 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

2

663 ns

20

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

312 ns

IEC-60747-1; UL RECOGNIZED

SEMIX603GB066HDS

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

720 A

UNSPECIFIED

POWER CONTROL

1.85 V

UNSPECIFIED

RECTANGULAR

2

1155 ns

8

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

TIN/SILVER

UPPER

R-XUFM-X8

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

295 ns

IEC-60747-1; UL RECOGNIZED

SGP02N120XK

Infineon Technologies

N-CHANNEL

SINGLE

NO

6.2 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

375 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

40 ns

SK25GD063

Semikron International

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

30 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

6

225 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN SILVER

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

e2

90 ns

UL RECOGNIZED

SKIIP11NAB126V1

Semikron International

N-CHANNEL

COMPLEX

NO

16 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

7

470 ns

24

SPECIAL SHAPE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN/SILVER

UNSPECIFIED

R-XXSS-X24

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

60 ns

UL RECOGNIZED

SKIIP13AC126V1

Semikron International

N-CHANNEL

COMPLEX

NO

41 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

540 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN/SILVER

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

130 ns

IEC-60747-1; UL RECOGNIZED

SKIIP23AC126V1

Semikron International

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

41 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

565 ns

42

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X42

ISOLATED

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

110 ns

UL RECOGNIZED

SKIIP24NAB126V1

Semikron International

N-CHANNEL

COMPLEX

NO

52 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

7

530 ns

42

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN/SILVER

UPPER

R-XUFM-X42

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747-1; UL RECOGNIZED

SKIIP26AC126V1

Semikron International

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

88 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

520 ns

42

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN/SILVER

UPPER

R-XUFM-X42

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747-1; UL RECOGNIZED

SKIIP36NAB126V1

Semikron International

N-CHANNEL

COMPLEX

NO

88 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

7

480 ns

68

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN/SILVER

UPPER

R-XUFM-X68

ISOLATED

Not Qualified

HIGH RELIABILITY

e3/e4

NOT SPECIFIED

NOT SPECIFIED

105 ns

IEC-60747-1; UL RECOGNIZED

SKIIP38AC126V2

Semikron International

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

118 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

555 ns

68

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN/SILVER

UPPER

R-XUFM-X68

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

110 ns

UL RECOGNIZED

SKM200GARL066T

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

2

9

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.