NO Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IXGN400N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

400 A

PLASTIC/EPOXY

POWER CONTROL

1.25 V

UNSPECIFIED

RECTANGULAR

1

840 ns

4

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

NICKEL

UPPER

R-PUFM-X4

ISOLATED

LOW CONDUCTION LOSS

124 ns

IXGN60N60

IXYS Corporation

N-CHANNEL

SINGLE

NO

250 W

100 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

700 ns

650 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

NICKEL

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

FAST

50 ns

IXGN72N60C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

360 W

78 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

1

110 ns

132 ns

4

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

240 ns

5.5 V

UPPER

R-PUFM-X4

ISOLATED

64 ns

UL RECOGNIZED

IXGX100N170

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

170 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

720 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e1

285 ns

IXGX120N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

780 W

200 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

830 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

123 ns

IXSH45N100

IXYS Corporation

N-CHANNEL

SINGLE

NO

300 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

1500 ns

2750 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

300 W

150 Cel

SILICON

1000 V

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

400 ns

IXXH30N60C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

166 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

57 ns

IXXH50N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

600 W

120 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

75 ns

IXXK200N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

1630 W

380 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

395 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

140 ns

IXYH30N120C3

Littelfuse

N-CHANNEL

SINGLE

NO

500 W

75 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

THROUGH-HOLE

RECTANGULAR

1

296 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

71 ns

IXYH60N90C3

Littelfuse

N-CHANNEL

SINGLE

NO

750 W

140 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

268 ns

3

FLANGE MOUNT

175 Cel

SILICON

900 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

104 ns

IXYH80N90C3

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

165 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

201 ns

3

FLANGE MOUNT

175 Cel

SILICON

900 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

134 ns

IXYP10N65C3D1M

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

53 W

15 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

128 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

44 ns

IXYP20N120C3

Littelfuse

N-CHANNEL

SINGLE

NO

278 W

40 A

PLASTIC/EPOXY

POWER CONTROL

3.4 V

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

60 ns

IXYX40N250CHV

Littelfuse

N-CHANNEL

SINGLE

NO

1500 W

154 A

PLASTIC/EPOXY

POWER CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

505 ns

3

IN-LINE

175 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

43 ns

MG300J2YS45

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

300 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

2

1000 ns

7

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X7

Not Qualified

MG50J2YS50

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

280 W

50 A

UNSPECIFIED

MOTOR CONTROL

240 ns

2.7 V

UNSPECIFIED

RECTANGULAR

2

300 ns

200 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

280 W

150 Cel

SILICON

600 V

160 ns

20 V

400 ns

8 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

80 ns

MG50J6ES40

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

UNSPECIFIED

RECTANGULAR

6

350 ns

19

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X19

Not Qualified

HIGH SPEED

MGM20N50

Motorola

N-CHANNEL

SINGLE

NO

100 W

20 A

METAL

MOTOR CONTROL

150 ns

PIN/PEG

ROUND

1

8000 ns

12000 ns

2

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

20 V

4 V

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e0

225 ns

MGP20N40CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

150 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

18000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

15 V

2.4 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOGIC LEVEL

TO-220AB

e0

8000 ns

MII200-12A4

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1250 W

270 A

UNSPECIFIED

MOTOR CONTROL

3 V

UNSPECIFIED

RECTANGULAR

2

700 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

UL RECOGNIZED

MUBW15-12A6K

Littelfuse

N-CHANNEL

COMPLEX

NO

90 W

19 A

UNSPECIFIED

POWER CONTROL

3.4 V

UNSPECIFIED

RECTANGULAR

7

350 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

e3

90 ns

UL RECOGNIZED

MUBW35-12A7

Littelfuse

N-CHANNEL

COMPLEX

NO

225 W

50 A

UNSPECIFIED

POWER CONTROL

3.1 V

UNSPECIFIED

RECTANGULAR

7

570 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

170 ns

RGS30TSX2HRC11

ROHM

N-CHANNEL

SINGLE

NO

267 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

189 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

39 ns

AEC-Q101

RGS80TSX2HRC11

ROHM

N-CHANNEL

SINGLE

NO

555 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

629 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

89 ns

AEC-Q101

RGTH40TS65GC11

ROHM

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

141 ns

3

FLANGE MOUNT

SILICON

650 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

47 ns

RGW60TK65GVC11

ROHM

N-CHANNEL

SINGLE

NO

33 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

209 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

ISOLATED

e3

50 ns

SGL160N60UFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

160 A

PLASTIC/EPOXY

MOTOR CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

262 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

450 ns

6.5 V

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

TO-264

150 ns

FGH80N60FD2

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

290 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

201 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AB

74 ns

FGL40N150D

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

40 A

PLASTIC/EPOXY

POWER CONTROL

700 ns

THROUGH-HOLE

RECTANGULAR

1

300 ns

300 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1500 V

25 V

7.5 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

TO-264AA

e0

450 ns

FGP20N60UFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

155 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

29 ns

FGP30N6S2D

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

167 W

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

100 ns

163 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

e3

28 ns

GT15J321

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

150 ns

340 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

HIGH SPEED

170 ns

GT15Q101

Toshiba

N-CHANNEL

SINGLE

NO

150 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

THROUGH-HOLE

RECTANGULAR

1

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 W

150 Cel

SILICON

1200 V

20 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

GT20D101

Toshiba

N-CHANNEL

SINGLE

NO

180 W

20 A

PLASTIC/EPOXY

POWER AMPLIFIER

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

180 W

150 Cel

SILICON

250 V

20 V

3.2 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

GT50N322A

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

150 Cel

SILICON

1000 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

330 ns

GT60M301

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

60 A

PLASTIC/EPOXY

POWER CONTROL

600 ns

3.4 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

900 V

25 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

GT80J101

Toshiba

N-CHANNEL

SINGLE

NO

150 W

80 A

PLASTIC/EPOXY

POWER CONTROL

600 ns

3.5 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

600 V

20 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

IXA20IF1200HB

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

165 W

38 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

IXBF20N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

34 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

695 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

Tin/Silver/Copper (Sn/Ag/Cu)

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e1

NOT SPECIFIED

NOT SPECIFIED

608 ns

IXBH10N300HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

34 A

PLASTIC/EPOXY

POWER CONTROL

2.8 V

THROUGH-HOLE

RECTANGULAR

1

1950 ns

3

FLANGE MOUNT

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

376 ns

IXDR30N120D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

570 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY

e1

10

260

170 ns

IXGF32N170

Littelfuse

N-CHANNEL

SINGLE

NO

200 W

44 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

500 ns

920 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e1

90 ns

IXGH16N60B2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e1

43 ns

IXGH20N120A3

Littelfuse

N-CHANNEL

SINGLE

NO

180 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

1530 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

66 ns

IXGH25N160

Littelfuse

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

526 ns

3

FLANGE MOUNT

150 Cel

SILICON

1600 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

283 ns

IXGH30N60BD1

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

190 ns

200 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

25 ns

IXGH32N60AU1

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

175 ns

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

60 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.