NO Insulated Gate Bipolar Transistors (IGBT) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IXBH32N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

80 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

795 ns

3

FLANGE MOUNT

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

573 ns

IXGH48N60B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

48 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

246 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

400 ns

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

47 ns

NGTB50N65FL2WG

Onsemi

N-CHANNEL

NO

417 W

100 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

6.5 V

MATTE TIN

e3

NGTG25N120FL2WG

Onsemi

N-CHANNEL

SINGLE

NO

385 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

178 ns

RJH60F7BDPQ-A0#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

328.9 W

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

216 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

144 ns

SGW30N60FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

391 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

78 ns

SKM300GB12V

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

443 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

2

11

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

-40 Cel

20 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

SKM400GB066D

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

500 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

2

613 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

TIN/SILVER

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

260 ns

UL RECOGNIZED

SKM400GB12V

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

598 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

2

11

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

STGF10NC60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

9 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

242 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

23 ns

STGP10H60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

115 W

20 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

214 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

26.8 ns

STGP10NC60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

242 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

23 ns

STGP19NC60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

35 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

270 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

38 ns

STGP20H65DFB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

147 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

178 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

26 ns

STGP20NC60V

STMicroelectronics

N-CHANNEL

SINGLE

NO

200 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

42.5 ns

STGW20NC60V

STMicroelectronics

N-CHANNEL

SINGLE

NO

200 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

e3

42.5 ns

STGW40H65DFB

STMicroelectronics

N-CHANNEL

NO

283 W

80 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

NOT SPECIFIED

NOT SPECIFIED

STGW60H65FB

STMicroelectronics

N-CHANNEL

SINGLE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

230 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

104 ns

STGW75H65DFB2-4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

357 W

115 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

231 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

42 ns

STGWA25H120DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

339 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

41 ns

STGWA40H120DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

468 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

351 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

56 ns

STGWT60H65DFB

STMicroelectronics

N-CHANNEL

NO

375 W

80 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

NOT SPECIFIED

NOT SPECIFIED

STGYA120M65DF2AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

351 ns

3

IN-LINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSIP-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

110 ns

AEC-Q101

SGF5N150UFTU

Onsemi

N-CHANNEL

SINGLE

NO

62.5 W

10 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

120 ns

100 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1500 V

20 V

4 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

e3

25 ns

NXH80T120L3Q0P3G

Onsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

188 W

75 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

4

750 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

98 ns

MGW12N120

Onsemi

N-CHANNEL

SINGLE

NO

125 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

695 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRAFAST, HIGH SPEED

TO-247AE

e0

153 ns

NXH75M65L4Q1SG

Onsemi

N-CHANNEL

COMPLEX

NO

83 W

59 A

UNSPECIFIED

POWER CONTROL

2.22 V

UNSPECIFIED

RECTANGULAR

6

146 ns

27

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

5.2 V

UPPER

R-XUFM-X27

ISOLATED

72 ns

SGF80N60UF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

80 A

PLASTIC/EPOXY

MOTOR CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

310 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

450 ns

6.5 V

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

85 ns

HGTP7N60A4

Onsemi

N-CHANNEL

SINGLE

NO

125 W

34 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

85 ns

205 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

235 ns

7 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

e3

17 ns

NXH100B120H3Q0PG

Onsemi

N-CHANNEL

COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

186 W

50 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

2

291 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

RC-IGBT

NOT SPECIFIED

NOT SPECIFIED

61 ns

FGL12040WD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

391 W

80 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

2.9 V

THROUGH-HOLE

RECTANGULAR

1

523 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

25 V

8 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-264AA

e3

105 ns

NXH80T120L2Q0P2G

Onsemi

N-CHANNEL

COMPLEX

NO

158 W

67 A

UNSPECIFIED

POWER CONTROL

2.85 V

UNSPECIFIED

RECTANGULAR

4

293 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

RC-IGBT

NOT SPECIFIED

NOT SPECIFIED

88 ns

NXH35C120L2C2SG

Onsemi

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, 1 BRAKE IGBT, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

35 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

7

485 ns

26

IN-LINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.8 V

DUAL

R-PDIP-T26

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

240 ns

MGP20N60U

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

142 W

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

455 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-220AB

e0

99 ns

NXH80T120L3Q0S3TG

Onsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

188 W

75 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

4

750 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

98 ns

FGHL75T65MQDTL4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

213 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T4

TO-247

e3

61 ns

TIG110BF

Onsemi

N-CHANNEL

SINGLE

NO

70 W

27 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

450 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

300 ns

FGH75T65SHDT-155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

455 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

109 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

NOT SPECIFIED

NOT SPECIFIED

89 ns

FGP20N60UFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

165 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

64 ns

155 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-220AB

e3

29 ns

FGPF4533

Onsemi

N-CHANNEL

SINGLE

NO

28.4 W

50 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

319 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

-55 Cel

30 V

4 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

LOW CONDUCTION LOSS

TO-220AB

e3

30 ns

FGA60N60UFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

120 A

UNSPECIFIED

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

80 ns

204 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-XSFM-T3

Not Qualified

LOW CONDUCTION LOSS

e3

83 ns

HGTP3N60A4

Onsemi

N-CHANNEL

SINGLE

NO

70 W

17 A

PLASTIC/EPOXY

POWER CONTROL

15 ns

2.7 V

THROUGH-HOLE

RECTANGULAR

1

100 ns

180 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

23 ns

-55 Cel

20 V

265 ns

7 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

e3

17.5 ns

MGP7N60E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

81 W

10 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

415 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING

TO-220AB

e0

55 ns

HGTP1N120BN

Onsemi

N-CHANNEL

SINGLE

NO

60 W

5.3 A

PLASTIC/EPOXY

MOTOR CONTROL

15 ns

2.9 V

THROUGH-HOLE

RECTANGULAR

1

370 ns

333 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

32 ns

-55 Cel

20 V

458 ns

SINGLE

R-PSFM-T3

COLLECTOR

AVALANCHE RATED

TO-220AB

24 ns

VMAX016001

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

108.8 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

ISOLATED

FAST SWITCHING

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

32 ns

AEC-Q101

FGL40N120AN

Onsemi

N-CHANNEL

SINGLE

NO

500 W

64 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

80 ns

165 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

25 V

7.5 V

SINGLE

R-PSFM-T3

RC-IGBT

TO-264AA

45 ns

SNXH100M95H3Q2F2PG

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

NO

457 W

263 A

UNSPECIFIED

POWER CONTROL

77 ns

2.25 V

UNSPECIFIED

RECTANGULAR

6

264 ns

1665 ns

40

FLANGE MOUNT

150 Cel

SILICON

950 V

-40 Cel

20 V

5.7 V

UPPER

R-XUFM-X40

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

306 ns

MGW12N120D

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

123 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRAFAST, HIGH SPEED

TO-247AE

e0

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.