NO Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
FGA50S110P	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		492 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1100 V			25 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3						e3			370 ns
SGH10N60RUFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	16 A	PLASTIC/EPOXY	MOTOR CONTROL		2.8 V	THROUGH-HOLE	RECTANGULAR	1	350 ns	284 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	410 ns	8.5 V		SINGLE	R-PSFM-T3									49 ns
MGP11N60E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	96 W	15 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		442 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	ULTRAFAST, HIGH SPEED	TO-220AB	e0			68 ns
FGPF4536	Onsemi	N-CHANNEL	SINGLE	NO	28.4 W		PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		292 ns	3	FLANGE MOUNT		150 Cel	SILICON	360 V		-55 Cel	30 V		4 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3			25.6 ns
FGHL40T65MQD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	238 W	80 A	PLASTIC/EPOXY	POWER AMPLIFIER		1.8 V	THROUGH-HOLE	RECTANGULAR	1		203 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3				RC-IGBT	TO-247	e3			52 ns
NXH80T120L2Q0S2TG	Onsemi	N-CHANNEL	COMPLEX	NO	158 W	67 A	UNSPECIFIED	POWER CONTROL		2.85 V	UNSPECIFIED	RECTANGULAR	4		293 ns	20	FLANGE MOUNT		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.4 V		UPPER	R-XUFM-X20		ISOLATED		RC-IGBT			NOT SPECIFIED	NOT SPECIFIED	88 ns
MGP20N14CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	135 V			10 V			TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOGIC LEVEL	TO-220AB	e0
MGW20N120	Onsemi	N-CHANNEL	SINGLE	NO	174 W	28 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		710 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-247AE	e0			190 ns
FGPF4633	Onsemi	N-CHANNEL	SINGLE	NO			PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		394 ns	3	FLANGE MOUNT			SILICON	330 V							SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				40 ns
SGH20N60RUFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		32 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		363 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING		e3			81 ns
MGW21N60ED	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	142 W	31 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		558 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	ULTRAFAST, HIGH SPEED	TO-247AE	e0			90 ns
NVH640S75L4SPB	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	680 W		UNSPECIFIED	POWER CONTROL		1.64 V	UNSPECIFIED	RECTANGULAR	6		956 ns	33	FLANGE MOUNT		175 Cel	SILICON	750 V		-40 Cel	20 V			MATTE TIN	UPPER	R-XUFM-X33		ISOLATED				e3			359 ns
NVH950S75L4SPB	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1300 W		UNSPECIFIED	POWER CONTROL		1.55 V	UNSPECIFIED	RECTANGULAR	6		1148 ns	33	FLANGE MOUNT		175 Cel	SILICON	750 V		-40 Cel	20 V				UPPER	R-XUFM-X33		ISOLATED							423 ns
NVH660S75L4SPFB	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	733 W		UNSPECIFIED	POWER CONTROL		1.44 V	UNSPECIFIED	RECTANGULAR	6		1601 ns	33	FLANGE MOUNT		175 Cel	SILICON	750 V		-40 Cel	20 V				UPPER	R-XUFM-X33		ISOLATED							422 ns
NVH640S75L4SPC	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	680 W		UNSPECIFIED	POWER CONTROL		1.64 V	UNSPECIFIED	RECTANGULAR	6		956 ns	33	FLANGE MOUNT		175 Cel	SILICON	750 V		-40 Cel	20 V				UPPER	R-XUFM-X33		ISOLATED							359 ns
NXH400N100H4Q2F2SG-R	Onsemi	N-CHANNEL	COMPLEX	NO	959 W	409 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	4		619 ns	42	FLANGE MOUNT		175 Cel	SILICON	1000 V		-40 Cel	20 V		6.1 V		UPPER	R-XUFM-X42		ISOLATED							186 ns
NVH950S75L4SPC	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1325 W		UNSPECIFIED	POWER CONTROL		1.55 V	UNSPECIFIED	RECTANGULAR	6		1148 ns	33	FLANGE MOUNT		175 Cel	SILICON	750 V		-40 Cel	20 V				UPPER	R-XUFM-X33		ISOLATED							423 ns
NVH660S75L4SPFC	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	733 W		UNSPECIFIED	POWER CONTROL		1.44 V	UNSPECIFIED	RECTANGULAR	6		1601 ns	33	FLANGE MOUNT		175 Cel	SILICON	750 V		-40 Cel	20 V				UPPER	R-XUFM-X33		ISOLATED							422 ns
NXH300B100H4Q2F2SG-R	Onsemi	N-CHANNEL	COMPLEX	NO	194 W	73 A	UNSPECIFIED	POWER CONTROL		2.25 V	UNSPECIFIED	RECTANGULAR	6		326 ns	59	FLANGE MOUNT		175 Cel	SILICON	1000 V		-40 Cel	20 V		5.9 V		UPPER	R-XUFM-X59		ISOLATED							110.42 ns
NXH800A100L4Q2F2P1G	Onsemi	N-CHANNEL	COMPLEX	NO	714 W	309 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	4		1121.94 ns	17	FLANGE MOUNT		175 Cel	SILICON	1000 V		-40 Cel	20 V		6.7 V		UPPER	R-XUFM-X17		ISOLATED							223.8 ns
NXH800A100L4Q2F2S1G	Onsemi	N-CHANNEL	COMPLEX	NO	714 W	309 A	UNSPECIFIED	POWER CONTROL		2.3 V	PIN/PEG	RECTANGULAR	4		1121.94 ns	17	FLANGE MOUNT		175 Cel	SILICON	1000 V		-40 Cel	20 V		6.7 V		UPPER	R-XUFM-P17		ISOLATED							223.8 ns
NXH800A100L4Q2F2S2G	Onsemi	N-CHANNEL	COMPLEX	NO	714 W	309 A	UNSPECIFIED	POWER CONTROL		2.3 V	PIN/PEG	RECTANGULAR	4		1121.94 ns	17	FLANGE MOUNT		175 Cel	SILICON	1000 V		-40 Cel	20 V		6.7 V		UPPER	R-XUFM-P17		ISOLATED							223.8 ns
NXH800A100L4Q2F2P2G	Onsemi	N-CHANNEL	COMPLEX	NO	714 W	309 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	4		1121.94 ns	17	FLANGE MOUNT		175 Cel	SILICON	1000 V		-40 Cel	20 V		6.7 V		UPPER	R-XUFM-X17		ISOLATED							223.8 ns
SGP13N60UFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		13 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		253 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING	TO-220AB	e3			62 ns
SGP13N60UFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	13 A	PLASTIC/EPOXY	MOTOR CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	253 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	450 ns	6.5 V		SINGLE	R-PSFM-T3					TO-220AB				62 ns
SGP10N60RUFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	16 A	PLASTIC/EPOXY	POWER CONTROL		2.8 V	THROUGH-HOLE	RECTANGULAR	1	350 ns	284 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	410 ns	8.5 V		SINGLE	R-PSFM-T3				RC-IGBT	TO-220AB				49 ns
NGTG30N60FLWG	Onsemi	N-CHANNEL		NO	250 W	60 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	Tin (Sn)								e3
AFGHL30T65RQDN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	230.8 W	42 A	PLASTIC/EPOXY	POWER CONTROL		1.82 V	THROUGH-HOLE	RECTANGULAR	1		139 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.3 V	MATTE TIN	SINGLE	R-PSFM-T3	1	COLLECTOR			TO-247	e3	30	260	48 ns
NGTB40N60IHLWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		230 ns	3	FLANGE MOUNT			SILICON	600 V						TIN	SINGLE	R-PSFM-T3					TO-247	e3			110 ns
NGTB15N60S1EG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	117 W	30 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		440 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	650 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB	e3			93 ns
NGTB20N120IHLWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		485 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3
NGTB15N60EG	Onsemi	N-CHANNEL		NO	117 W	30 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	TIN								e3
NGTB25N120SWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	385 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		430 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V	TIN	SINGLE	R-PSFM-T3					TO-247	e3			178 ns
NGTB30N60SWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	189 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		285 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	Tin (Sn)	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			90 ns
AFGHL75T65SQ	Onsemi	N-CHANNEL	SINGLE	NO	375 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		187 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS	TO-247	e3	NOT SPECIFIED	NOT SPECIFIED	70 ns	AEC-Q101
SGL50N60RUFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		80 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		329 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V							SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING	TO-264AA		NOT SPECIFIED	NOT SPECIFIED	119 ns
HGTG10N120BN	Onsemi	N-CHANNEL	SINGLE	NO	298 W	35 A	PLASTIC/EPOXY	MOTOR CONTROL	15 ns	4.2 V	THROUGH-HOLE	RECTANGULAR	1	200 ns	330 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	40 ns	-55 Cel	20 V	450 ns			SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247				32 ns
NGTB50N65S1WG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	140 A	PLASTIC/EPOXY	POWER CONTROL		2.45 V	THROUGH-HOLE	RECTANGULAR	1		228 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V	Tin (Sn)	SINGLE	R-PSFM-T3					TO-247AD	e3			118 ns
HGTG11N120CN	Onsemi	N-CHANNEL	SINGLE	NO	298 W	43 A	PLASTIC/EPOXY	POWER CONTROL	16 ns	2.4 V	THROUGH-HOLE	RECTANGULAR	1	400 ns	550 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	40 ns	-55 Cel	20 V	680 ns			SINGLE	R-PSFM-T3		COLLECTOR		AVALANCHE RATED, LOW CONDUCTION LOSS	TO-247				33 ns
HGTG7N60A4	Onsemi	N-CHANNEL	SINGLE	NO	125 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	85 ns	205 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	235 ns	7 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				17 ns
AFGHL75T65SQDC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	375 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		196.4 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS	TO-247	e3	NOT SPECIFIED	NOT SPECIFIED	73.6 ns	AEC-Q101
NGTB30N60FWG	Onsemi	N-CHANNEL		NO	167 W	60 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	TIN								e3
AFGHL40T65SPD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	267 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		48 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	7.5 V		20 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS	TO-247	e3	NOT SPECIFIED	NOT SPECIFIED	56 ns	AEC-Q101
FGH40T65SHDF_F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		126 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	650 V			20 V		7.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB		NOT SPECIFIED	NOT SPECIFIED	49 ns
FGH4L40T120LQD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	306 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		298 ns	4	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	20 V		7.5 V		SINGLE	R-PSFM-T4					TO-247				61 ns
NGTB15N120IHLWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	30 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		440 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3
AFGHL75T65SQD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	375 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		187 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			70 ns	AEC-Q101
FGH40T70SHD_F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.15 V	THROUGH-HOLE	RECTANGULAR	1		81 ns	3	FLANGE MOUNT		175 Cel	SILICON	700 V		-55 Cel	20 V		7.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB	e3			56 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.