NO Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
MGP11N60ED	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	96 W	15 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		442 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	ULTRAFAST, HIGH SPEED	TO-220AB	e0			68 ns
FGH30N120FTD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		575 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V							SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified		TO-247AB		NOT SPECIFIED	NOT SPECIFIED	167 ns
NXH80T120L2Q0S1G	Onsemi	N-CHANNEL	COMPLEX	NO	125 W	57 A	UNSPECIFIED	POWER CONTROL		2.85 V	UNSPECIFIED	RECTANGULAR	4		320 ns	18	FLANGE MOUNT		125 Cel	SILICON	1200 V		-40 Cel	20 V		6.4 V		UPPER	R-XUFM-X18	ISOLATED		RC-IGBT					55 ns
TIG056BF-1E	Onsemi	N-CHANNEL		NO	30 W													Insulated Gate BIP Transistors	150 Cel		430 V			33 V		5 V	MATTE TIN							e3
FGY60T120SQDN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	517 W	120 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		1.95 V	THROUGH-HOLE	RECTANGULAR	1		468 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	25 V		6.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3	COLLECTOR		HIGH SPEED SWITCHING	TO-247	e3	NOT SPECIFIED	NOT SPECIFIED	112 ns
ENGAFGHL50T65SQDC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	467 W	88.7 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1		100.5 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V				SINGLE	R-PSFM-T3	COLLECTOR			TO-247				36.76 ns
FGPF50N30TTU	Onsemi	N-CHANNEL	SINGLE	NO			PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		423 ns	3	FLANGE MOUNT		150 Cel	SILICON	300 V						MATTE TIN	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			108 ns
NXH75M65L4Q1PTG	Onsemi	N-CHANNEL	COMPLEX	NO	83 W	59 A	UNSPECIFIED	POWER CONTROL		2.22 V	UNSPECIFIED	RECTANGULAR	6		146 ns	27	FLANGE MOUNT		150 Cel	SILICON	650 V		-40 Cel	20 V		5.2 V	MATTE TIN	UPPER	R-XUFM-X27	ISOLATED				e3			72 ns
SGS23N60UFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	73 W	23 A	PLASTIC/EPOXY	POWER CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1	150 ns	130 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	280 ns	6.5 V		SINGLE	R-PSFM-T3	ISOLATED			TO-220AB				44 ns
NXH400N100H4Q2F2PG	Onsemi	N-CHANNEL	COMPLEX	NO	959 W	409 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	4		619 ns	42	FLANGE MOUNT		175 Cel	SILICON	1000 V		-40 Cel	20 V		6.1 V		UPPER	R-XUFM-X42	ISOLATED					NOT SPECIFIED	NOT SPECIFIED	186 ns
HGTP7N60A4D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	85 ns	205 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	235 ns	7 V		SINGLE	R-PSFM-T3	COLLECTOR		LOW CONDUCTION LOSS	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	17 ns
MGP15N40CLG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	150 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	6000 ns		THROUGH-HOLE	RECTANGULAR	1	20000 ns	20500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			22 V		2.1 V	TIN	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	VOLTAGE CLAMPING	TO-220AB	e3		260	6000 ns
NXH450N65L4Q2F2S1G	Onsemi	N-CHANNEL	2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	365 W	167 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	4		694 ns	36	FLANGE MOUNT		175 Cel	SILICON	650 V		-40 Cel	20 V		5.2 V		UPPER	R-XUFM-X36	ISOLATED							211 ns
FGY120T65SPD-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	882 W	240 A	PLASTIC/EPOXY	POWER CONTROL		1.85 V	THROUGH-HOLE	RECTANGULAR	1		247 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.2 V		SINGLE	R-PSFM-T3						NOT SPECIFIED	NOT SPECIFIED	187 ns	AEC-Q101
MGP15N40CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	136 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			THROUGH-HOLE	RECTANGULAR	1		20500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			22 V		2.1 V	TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	VOLTAGE CLAMPING	TO-220AB	e0		235	6000 ns
FGL40N120ANTU	Onsemi	N-CHANNEL	SINGLE	NO		64 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		165 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V						MATTE TIN	SINGLE	R-PSFM-T3		Not Qualified	LOW CONDUCTION LOSS	TO-264AA	e3			45 ns
AFGY160T65SPD-B4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	882 W	240 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.3 V		SINGLE	R-PSFM-T3				TO-247					AEC-Q101
FGH75N60UF	Onsemi	N-CHANNEL	SINGLE	NO		150 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		188 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V							SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified		TO-247AB		NOT SPECIFIED	NOT SPECIFIED	101 ns
FGPF4565	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	30 A	PLASTIC/EPOXY	POWER CONTROL		1.88 V	THROUGH-HOLE	RECTANGULAR	1		242.8 ns	3	FLANGE MOUNT		150 Cel	SILICON	650 V		-55 Cel	25 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3	ISOLATED			TO-220AB	e3			72 ns
FGA5065ADF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	100 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		2.2 V	THROUGH-HOLE	RECTANGULAR	1		80 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3					e3	NOT SPECIFIED	NOT SPECIFIED	57.6 ns
FGH75T65SQDTL4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	375 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		352 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	MATTE TIN	SINGLE	R-PSFM-T4			RC-IGBT	TO-247	e3			80 ns
NGP15N41ACLG	Onsemi	N-CHANNEL		NO	107 W	15 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		440 V			15 V		1.9 V
NXH200T120H3Q2F2SG	Onsemi	N-CHANNEL	COMPLEX	NO	679 W	256 A	UNSPECIFIED	POWER CONTROL	102 ns	2.3 V	UNSPECIFIED	RECTANGULAR	4	99 ns	1096 ns	56	FLANGE MOUNT		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X56	ISOLATED							373 ns
FGA50T65SHD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	319 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		90.6 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3			FAST SWITCHING		e3			57.6 ns
FGAF40N60UF	Onsemi	N-CHANNEL	SINGLE	NO		40 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		190 ns	3	FLANGE MOUNT			SILICON	600 V							SINGLE	R-PSFM-T3	ISOLATED		LOW CONDUCTION LOSS					67 ns
SGF23N60UF	Onsemi	N-CHANNEL	SINGLE	NO	75 W	23 A	PLASTIC/EPOXY	POWER CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	320 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	450 ns	6.5 V		SINGLE	R-PSFM-T3	ISOLATED							55 ns
HGTP3N60A4D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		17 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		180 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			17.5 ns
HGTP20N60C3	Onsemi	N-CHANNEL	SINGLE	NO	164 W	45 A	PLASTIC/EPOXY	MOTOR CONTROL	28 ns	1.8 V	THROUGH-HOLE	RECTANGULAR	1	210 ns	388 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	60 ns	-55 Cel	20 V	660 ns	6.3 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-220AB				52 ns
NVH820S75L4SPB	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	NO	1000 W	820 A	UNSPECIFIED	POWER CONTROL		1.55 V	UNSPECIFIED	RECTANGULAR	6		1354 ns	33	FLANGE MOUNT		175 Cel	SILICON	750 V		-40 Cel	20 V		6.6 V	Matte Tin (Sn) - annealed	UPPER	R-XUFM-X33	ISOLATED				e3			454 ns
MGY25N120D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	212 W	38 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		876 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3		Not Qualified	ULTRAFAST, HIGH SPEED	TO-264AA	e0			214 ns
NXH160T120L2Q1PG	Onsemi	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR	NO	280 W	140 A	UNSPECIFIED	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	4			30	FLANGE MOUNT		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.9 V		UPPER	R-XUFM-X30	ISOLATED					NOT SPECIFIED	NOT SPECIFIED
NXH450N65L4Q2F2SG	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	633 W	280 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	2		978 ns	40	FLANGE MOUNT		125 Cel	SILICON	650 V		-40 Cel	20 V		5.2 V		UPPER	R-XUFM-X40	ISOLATED							192 ns
FGHL50T65LQD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.3 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	30 V		6 V		SINGLE	R-PSFM-T3				TO-247		NOT SPECIFIED	NOT SPECIFIED
FGH20N60UFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	165 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1	64 ns	119 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247AB				30 ns
MGW14N60ED	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	112 W	18 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING			THROUGH-HOLE	RECTANGULAR	1		418 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3		Not Qualified		TO-247AE	e0			62 ns
FGA40T65SHDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.81 V	THROUGH-HOLE	RECTANGULAR	1		126 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3					e3			49 ns
MGP4N60ED	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	62.5 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		396 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED SWITCHING, ULTRA FAST SOFT RECOVERY	TO-220AB	e0			65 ns
HGTP7N60C3	Onsemi	N-CHANNEL	SINGLE	NO	60 W	14 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1	275 ns	490 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-40 Cel	20 V	675 ns	6 V		SINGLE	R-PSFM-T3	COLLECTOR		RC-IGBT	TO-220AB				20 ns
SNXH80T120L2Q0P2G	Onsemi	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	158 W	67 A	UNSPECIFIED	POWER CONTROL		2.85 V	UNSPECIFIED	RECTANGULAR	4		293 ns	20	FLANGE MOUNT		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.4 V		UPPER	R-XUFM-X20	ISOLATED							88 ns
NXH350N100H4Q2F2PG	Onsemi	N-CHANNEL	2 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	NO	592 W	329 A	UNSPECIFIED	POWER CONTROL		1.8 V	UNSPECIFIED	RECTANGULAR	2		572.5 ns	42	FLANGE MOUNT		125 Cel	SILICON	1000 V		-40 Cel	20 V		5.7 V		UPPER	R-XUFM-X42	ISOLATED							114 ns
FGHL75T65LQDT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	469 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.35 V	THROUGH-HOLE	RECTANGULAR	1		696 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3				TO-247		NOT SPECIFIED	NOT SPECIFIED	88 ns
SNXH75M65L3F2STG	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	NO	236 W	75 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		2.2 V	PIN/PEG	RECTANGULAR	1		432 ns	32	FLANGE MOUNT		150 Cel	SILICON	650 V		-40 Cel	25 V		6.8 V		UPPER	R-PUFM-P32	ISOLATED		LOW SWITCHING LOSSES					129 ns
NXH300B100H4Q2F2SG	Onsemi	N-CHANNEL	COMPLEX	NO	194 W	73 A	UNSPECIFIED	POWER CONTROL		2.25 V	UNSPECIFIED	RECTANGULAR	6		326 ns	59	FLANGE MOUNT		175 Cel	SILICON	1000 V		-40 Cel	20 V		5.9 V		UPPER	R-XUFM-X59	ISOLATED							110.42 ns
FGY100T65SCDT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	200 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		1.9 V	THROUGH-HOLE	RECTANGULAR	1		410 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	25 V		6.9 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR		FAST SWITCHING	TO-247	e3			240 ns
NXH35C120L2C2ESG	Onsemi	N-CHANNEL	COMPLEX	NO		35 A	UNSPECIFIED	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	6		485 ns	26	IN-LINE		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.8 V		DUAL	R-XDIP-T26								240 ns
MGP15N35CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	136 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			THROUGH-HOLE	RECTANGULAR	1		20500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	380 V			22 V		2.1 V	TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	VOLTAGE CLAMPING	TO-220AB	e0		235	6000 ns
MGP15N43CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			THROUGH-HOLE	RECTANGULAR	1		21000 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	460 V			17 V		2.1 V	TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified		TO-220AB	e0			5000 ns
FGHL50T65MQDT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		144 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3	COLLECTOR			TO-247	e3			51 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.