NO Insulated Gate Bipolar Transistors (IGBT) 2,400+

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
AFGHL25T120RHD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	261 W	48 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		219 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	20 V		7.3 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			43 ns	AEC-Q101
FGA20S140P	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	272 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		776 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1400 V			25 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3						e3			322 ns
HGTG20N60C3	Onsemi	N-CHANNEL	SINGLE	NO	164 W	45 A	PLASTIC/EPOXY	MOTOR CONTROL	28 ns	1.8 V	THROUGH-HOLE	RECTANGULAR	1	210 ns	388 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	60 ns	-55 Cel	20 V	660 ns	6.3 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				52 ns
FGP15N60UNDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	178 W	30 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	12.8 ns	69.8 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8.5 V	MATTE TIN	SINGLE	R-PSFM-T3					TO-220AB	e3			18.8 ns
AFGH50T65SQDN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	100 A	PLASTIC/EPOXY	GENERAL PURPOSE			THROUGH-HOLE	RECTANGULAR	1		110 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V			Tin (Sn)	SINGLE	R-PSFM-T3					TO-247AB	e3			33 ns	AEC-Q101
NGTB25N120FL2WAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	385 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		313 ns	4	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V	TIN	SINGLE	R-PSFM-T4					TO-247	e3			34 ns
FGA15S125P	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	30 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		670 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1250 V			25 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3						e3			331 ns
NGTB40N120IHLWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	260 W	80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		565 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3
ISL9V5036P3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	250 W	46 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	THROUGH-HOLE	RECTANGULAR	1	15000 ns	13600 ns	3	FLANGE MOUNT		175 Cel	SILICON	420 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	2800 ns	AEC-Q101
NGTB15N60R2FG	Onsemi	N-CHANNEL		NO	54 W	24 A												Insulated Gate BIP Transistors	175 Cel		600 V			20 V		7 V	MATTE TIN								e3
NGTB45N60SWG	Onsemi	N-CHANNEL		NO	250 W	90 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	MATTE TIN								e3
NGTG50N60FLWG	Onsemi	N-CHANNEL		NO	223 W	100 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	Tin (Sn)								e3
FGH40T65SH_F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		85.6 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS	TO-247AB	e3			51.2 ns
FPF2G120BF07AS	Onsemi	N-CHANNEL	SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	156 W	40 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	3		165 ns	32	FLANGE MOUNT		150 Cel	SILICON	650 V		-40 Cel	20 V		6.8 V		UPPER	R-XUFM-X32		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	49 ns
NGTB30N65IHL2WG	Onsemi	N-CHANNEL		NO	300 W	60 A												Insulated Gate BIP Transistors	175 Cel		650 V			20 V		6.5 V	Matte Tin (Sn) - annealed								e3
NGTB40N65FL2WG	Onsemi	N-CHANNEL		NO	366 W	80 A												Insulated Gate BIP Transistors	175 Cel		650 V			20 V		6.5 V	MATTE TIN								e3
NGTB20N120IHSWG	Onsemi	N-CHANNEL		NO	156 W	40 A												Insulated Gate BIP Transistors	150 Cel		1200 V			20 V		6.5 V	TIN								e3
SGP23N60UF	Onsemi	N-CHANNEL	SINGLE	NO	100 W	23 A	PLASTIC/EPOXY	POWER CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	320 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	450 ns	6.5 V		SINGLE	R-PSFM-T3					TO-220AB				55 ns
NGTB30N60L2WG	Onsemi	N-CHANNEL		NO	225 W	100 A												Insulated Gate BIP Transistors	175 Cel		600 V			20 V		6.5 V	MATTE TIN								e3
FGH12040WD-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	428 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.9 V	THROUGH-HOLE	RECTANGULAR	1		630 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	25 V		8 V		SINGLE	R-PSFM-T3					TO-247				116 ns
ISL9V3040S3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	THROUGH-HOLE	RECTANGULAR	1	15000 ns	7600 ns	3	IN-LINE		175 Cel	SILICON	390 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSIP-T3		COLLECTOR			TO-262AA				2800 ns
NGTB20N135IHRWG	Onsemi	N-CHANNEL		NO	394 W	40 A												Insulated Gate BIP Transistors	175 Cel		1350 V			20 V		6.5 V	Matte Tin (Sn) - annealed								e3
FGH40T65UQDF_F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	231 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.67 V	THROUGH-HOLE	RECTANGULAR	1		314 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3				RC-IGBT	TO-247	e3			52 ns
NGTB45N60S1WG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	90 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		223 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V		-55 Cel	20 V		6.5 V	Tin (Sn)	SINGLE	R-PSFM-T3					TO-247AD	e3			108 ns
NGTB40N135IHRWG	Onsemi	N-CHANNEL		NO	394 W	80 A												Insulated Gate BIP Transistors	175 Cel		1350 V			20 V		6.5 V	MATTE TIN								e3
NGTB40N60FLWG	Onsemi	N-CHANNEL		NO	257 W	80 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	Tin (Sn)								e3
FGA20N120FTDTU	Onsemi	N-CHANNEL		NO	298 W	40 A								320 ns				Insulated Gate BIP Transistors	150 Cel		1200 V			25 V		7.5 V	MATTE TIN								e3
AFGHL40T65SQD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	238 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3	NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
FGA25S125P-SN00337	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.35 V	THROUGH-HOLE	RECTANGULAR	1		722 ns	3	FLANGE MOUNT		175 Cel	SILICON	1250 V		-55 Cel	25 V		7.5 V		SINGLE	R-PSFM-T3									325.2 ns
NGTG35N65FL2WG	Onsemi	N-CHANNEL	SINGLE	NO		70 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		231 ns	3	FLANGE MOUNT			SILICON	650 V						MATTE TIN	SINGLE	R-PSFM-T3	1	COLLECTOR			TO-247	e3	30	260	108 ns
NGTB30N120IHRWG	Onsemi	N-CHANNEL		NO	384 W	60 A												Insulated Gate BIP Transistors	175 Cel		1200 V			20 V		6.5 V	Tin (Sn)								e3
FGH40T65UPD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL	34 ns		THROUGH-HOLE	RECTANGULAR	1	22 ns	213 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	650 V			20 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB	e3			57 ns
FGH40T65SQD_F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	238 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3
NGTB45N60S2WG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	90 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		232 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V		-55 Cel	20 V		6.5 V	Tin (Sn)	SINGLE	R-PSFM-T3					TO-247AD	e3
NXH50M65L4Q1SG	Onsemi	N-CHANNEL	COMPLEX	NO	86 W	48 A	UNSPECIFIED	POWER CONTROL		2.22 V	UNSPECIFIED	RECTANGULAR	6		130 ns	27	FLANGE MOUNT		150 Cel	SILICON	650 V		-40 Cel	20 V		5.2 V		UPPER	R-XUFM-X27		ISOLATED							39 ns
NGTB15N135IHRWG	Onsemi	N-CHANNEL		NO	357 W	30 A												Insulated Gate BIP Transistors	175 Cel		1350 V			20 V		6.5 V	Matte Tin (Sn) - annealed								e3
FGH40T65SH-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		85.6 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS	TO-247	e3			51.2 ns
FGH40T100SMD-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	333 W	80 A	PLASTIC/EPOXY	POWER CONTROL	64 ns	2.3 V	THROUGH-HOLE	RECTANGULAR	1	30 ns	305 ns	3	FLANGE MOUNT		175 Cel	SILICON	1000 V	100 ns	-55 Cel	20 V	397 ns	6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB		NOT SPECIFIED	NOT SPECIFIED	76 ns
NGTB20N120LWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192 W	40 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		485 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			110 ns
ISL9V2040P3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		2.3 V	THROUGH-HOLE	RECTANGULAR	1		6000 ns	3	FLANGE MOUNT		175 Cel	SILICON	390 V		-40 Cel	12 V		2.2 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				2780 ns
HGTG18N120BN	Onsemi	N-CHANNEL	SINGLE	NO		54 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		345 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, AVALANCHE RATED	TO-247	e3			38 ns
NGTB10N60FG	Onsemi	N-CHANNEL		NO	40 W	20 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	MATTE TIN								e3
FGA90N33ATDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		90 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		360 ns	3	FLANGE MOUNT		150 Cel	SILICON	330 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS		e3			60 ns
NGTB25N120IHLWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		475 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3
AFGHL40T120RHD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	48 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		230 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	20 V		7.3 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			66 ns	AEC-Q101
FGA180N33ATTU	Onsemi	N-CHANNEL	SINGLE	NO		180 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		362 ns	3	FLANGE MOUNT		150 Cel	SILICON	330 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS		e3			101 ns
ISL9V5036S3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	250 W	46 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	THROUGH-HOLE	RECTANGULAR	1	15000 ns	13600 ns	3	IN-LINE		175 Cel	SILICON	420 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V		SINGLE	R-PSIP-T3		COLLECTOR			TO-262AA		NOT SPECIFIED	NOT SPECIFIED	2800 ns	AEC-Q101
NGTB30N135IHRWG	Onsemi	N-CHANNEL		NO	394 W	60 A												Insulated Gate BIP Transistors	175 Cel		1350 V			20 V		6.5 V	MATTE TIN								e3

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.