Onsemi - NGTB30N120IHRWG

  1. Home
  2. Onsemi - NGTB30N120IHRWG
NGTB30N120IHRWG by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NGTB30N120IHRWG
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 384 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Operating Temperature: 175 Cel;
Datasheet NGTB30N120IHRWG Datasheet
In Stock745
NAME DESCRIPTION
Other Names: 2156-NGTB30N120IHRWG-ON
ONSONSNGTB30N120IHRWG
NGTB30N120IHRWGOS
Maximum Collector Current (IC): 60 A
Maximum Power Dissipation (Abs): 384 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
745 - -

Popular Products

Category Top Products

IRG4BC30FD-SPBF by Infineon Technologies

IRG4BC30FD-SPBF

Infineon Technologies

IRG4BC30FD-SPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 31A max collector current. It has a built-in diode, 620ns turn-off time, and 100W power dissipation. Ideal for power control applications requiring fast switching capabilities in surface mount configurations.
IXDR35N60BD1 by Littelfuse

IXDR35N60BD1

Littelfuse

IXDR35N60BD1 by Littelfuse is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 38A max collector current, and 390ns turn off time. Ideal for power control applications due to its single configuration with built-in diode and isolated case connection.
FGH40T65SPD_F155 by Onsemi

FGH40T65SPD_F155

Onsemi

FGH40T65SPD_F155 by Onsemi is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 267W Ptot. Ideal for power control applications, it features a built-in diode, 56ns toff, and operates up to 175°C.
IXYN100N120C3H1 by Littelfuse

IXYN100N120C3H1

Littelfuse

IXYN100N120C3H1 by Littelfuse is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 134A max collector current, and 690W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 265ns.
SGL160N60UFDTU by Fairchild Semiconductor

SGL160N60UFDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 160 A; Terminal Position: SINGLE;
IXGH24N170 by Littelfuse

IXGH24N170

Littelfuse

IXGH24N170 by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 50A max collector current, and 250W max power dissipation. Ideal for power control applications, it has a single configuration and operates at up to 150°C.
FZ400R17KE4HOSA1 by Infineon Technologies

FZ400R17KE4HOSA1

Infineon Technologies

FZ400R17KE4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1700V and current of 550A. It has a turn on time of 355ns and turn off time of 930ns, making it ideal for power control applications. The transistor comes in a rectangular package style with built-in diode, suitable for flange mount installations at temperatures up to 150°C.
FF600R12IP4BOSA1 by Infineon Technologies

FF600R12IP4BOSA1

Infineon Technologies

FF600R12IP4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It is designed for POWER CONTROL applications with a max voltage of 1200V and operating temperature of 175°C. Featuring a turn-off time of 1050ns and turn-on time of 370ns, this rectangular package transistor is ideal for high-power systems.
NGTB15N120LWG by Onsemi

NGTB15N120LWG

Onsemi

NGTB15N120LWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 30A max collector current, and 229W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 435ns.
FGP10N60UNDF by Onsemi

FGP10N60UNDF

Onsemi

FGP10N60UNDF by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 20A max collector current, and 139W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast switching times of 15.4ns turn on and 24.8ns fall time.
IXXX200N65B4 by IXYS Corporation

IXXX200N65B4

IXYS Corporation

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 1150 W; Maximum Collector Current (IC): 370 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Gate-Emitter Voltage: 20 V;
IXGR16N170AH1 by IXYS Corporation

IXGR16N170AH1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Maximum Collector Current (IC): 16 A; No. of Elements: 1;
FS150R12KE3BOSA1 by Infineon Technologies

FS150R12KE3BOSA1

Infineon Technologies

FS150R12KE3BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 200A, and turn-off time of 610ns. Ideal for applications requiring high power efficiency in industrial settings due to its isolated case connection and fast switching capabilities.
IRGP4640DPBF by Infineon Technologies

IRGP4640DPBF

Infineon Technologies

IRGP4640DPBF by Infineon is an N-CHANNEL IGBT with 600V VCEsat, 65A IC, and 250W power dissipation. Ideal for power control applications, it features a built-in diode, 31ns rise time, and -55 to 175°C operating temperature range.
IXGN200N170 by Littelfuse

IXGN200N170

Littelfuse

IXGN200N170 by Littelfuse is an N-CHANNEL IGBT with 1700V VCEsat, 280A IC, and 1250W power dissipation. Ideal for POWER CONTROL applications, it has a toff of 1040ns and ton of 183ns.
IHW30N120R5XKSA1 by Infineon Technologies

IHW30N120R5XKSA1

Infineon Technologies

IHW30N120R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 1.85V and a max collector-emitter voltage of 1200V. It is designed for power control applications, featuring a nominal turn off time of 520ns and a max power dissipation of 330W.
CM200DU-12NFH by Powerex

CM200DU-12NFH

Powerex

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; No. of Elements: 2; Package Body Material: UNSPECIFIED;
FGL60N100BNTDTU by Fairchild Semiconductor

FGL60N100BNTDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 60 A; Package Body Material: PLASTIC/EPOXY;
IKQ75N120CT2XKSA1 by Infineon Technologies

IKQ75N120CT2XKSA1

Infineon Technologies

IKQ75N120CT2XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with VCEsat of 2.15V and IC of 150A. Ideal for POWER CONTROL applications, it has a max VCE of 1200V and can operate b/w -40 to 175 °C.
IRG4BC20UD-STRR by International Rectifier

IRG4BC20UD-STRR

International Rectifier

IRG4BC20UD-STRR by International Rectifier is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 13A max collector current. It has a built-in diode, 170ns fall time, and 320ns turn off time. Ideal for power control applications requiring high power dissipation up to 60W in surface mount configurations.