Onsemi - NGTB30N120IHRWG

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NGTB30N120IHRWG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGTB30N120IHRWG
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 384 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Operating Temperature: 175 Cel;
Datasheet NGTB30N120IHRWG Datasheet
In Stock745
NAME DESCRIPTION
Maximum Collector Current (IC): 60 A
Maximum Power Dissipation (Abs): 384 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
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