Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
231 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.67 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
314 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
5.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
TO-247AB |
e3 |
52 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
223 W |
100 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
6.5 V |
TIN |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
595 W |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
380 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6.5 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247AD |
e3 |
150 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
260 W |
80 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
565 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
178 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
357 W |
60 A |
PLASTIC/EPOXY |
POWER AMPLIFIER |
1.95 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
423 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1400 V |
-40 Cel |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
405 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
316 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
TIN |
SINGLE |
R-PSFM-T3 |
LOW CONDUCTION LOSS |
TO-247AD |
e3 |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
417 W |
80 A |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
6.5 V |
MATTE TIN |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
366 W |
80 A |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
6.5 V |
Tin (Sn) |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
100 W |
23 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
280 ns |
320 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
7.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING |
TO-220AB |
e3 |
55 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
268 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
169.6 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.4 V |
SINGLE |
R-PSFM-T4 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
44.8 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
96 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
6 |
128 ns |
28 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X28 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
42 ns |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
250 W |
35 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
6 |
398 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
142 ns |
||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
104 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
3.85 V |
UNSPECIFIED |
RECTANGULAR |
6 |
756 ns |
13 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
Not Qualified |
57 ns |
|||||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
104 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
2.75 V |
UNSPECIFIED |
RECTANGULAR |
6 |
13 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
Not Qualified |
|||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
56 W |
19 A |
UNSPECIFIED |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
6 |
99 ns |
16 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X16 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
27 ns |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
208 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
7 |
298 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
167 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
197 W |
25 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
6 |
326 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
139 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
197 W |
25 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
6 |
338 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X35 |
NOT SPECIFIED |
NOT SPECIFIED |
125.2 ns |
UL RECOGNIZED |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
250 W |
35 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
7 |
364 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
145 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
208 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
6 |
331 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
167.2 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
250 W |
35 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
6 |
398 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
142 ns |
||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
100 W |
7 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
7 A |
1300 ns |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
500 V |
TIN LEAD |
7 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e0 |
800 ns |
|||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
100 W |
10 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10 A |
1300 ns |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
500 V |
TIN LEAD |
10 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e0 |
800 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
208 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
6 |
331 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
167.2 ns |
||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
35 W |
10 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10 A |
1300 ns |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
500 V |
TIN LEAD |
10 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
e0 |
800 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
208 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
7 |
298 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
167 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
142.8 W |
15 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
7 |
199 ns |
23 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
134.5 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
250 W |
35 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
6 |
364 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X35 |
NOT SPECIFIED |
NOT SPECIFIED |
170 ns |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
197 W |
25 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
6 |
326 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
139 ns |
||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
35 W |
7 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
7 A |
1300 ns |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
500 V |
TIN LEAD |
7 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
e0 |
800 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
NO |
128 W |
50 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
5.75 V |
|||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
105 W |
16 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
342 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
TO-251 |
NOT SPECIFIED |
NOT SPECIFIED |
18.5 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
147 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
178 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
26 ns |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
280 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
46 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
190 W |
60 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
410 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
90 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
283 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
241 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
73 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
50 W |
10 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
18 W |
7.5 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.95 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
140 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.75 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
15 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
260 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
247 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
Matte Tin (Sn) |
SINGLE |
R-PSIP-T3 |
1 |
Not Qualified |
e3 |
61 ns |
||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
235 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
624 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
25 V |
5.75 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
ULTRA FAST |
TO-247 |
57 ns |
||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
252 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
39.6 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
470 W |
120 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
358 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
128 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
260 W |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.6 V |
UNSPECIFIED |
RECTANGULAR |
1 |
343 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
69 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
375 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
243 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
NOT SPECIFIED |
NOT SPECIFIED |
80 ns |
||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
100 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
540 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSIP-T3 |
Not Qualified |
90 ns |
||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
68 W |
10 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
220 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
7 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
19 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
10 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
560 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
ULTRA FAST |
TO-220AB |
e3 |
22.5 ns |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
260 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
223 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
51.1 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.