NO Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
NGTB60N60SWG	Onsemi	N-CHANNEL		NO	298 W	120 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	TIN								e3
NGTB40N65IHRTG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	405 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	THROUGH-HOLE	RECTANGULAR	1		316 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-40 Cel			6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS		e3
NGTB15N120IHWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		30 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		385 ns	3	FLANGE MOUNT			SILICON	1200 V						TIN	SINGLE	R-PSFM-T3					TO-247	e3
FGH40N120AN	Onsemi	N-CHANNEL	SINGLE	NO		64 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		165 ns	3	FLANGE MOUNT			SILICON	1200 V							SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AB		NOT SPECIFIED	NOT SPECIFIED	45 ns
FGA20S125P_SN00336	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1250 V			25 V		7.5 V		SINGLE	R-PSFM-T3
FGH40T65SHD-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		85.6 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel			7.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS	TO-247	e3	NOT SPECIFIED	NOT SPECIFIED	51.2 ns
FGY75T95LQDT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	453 W	150 A	PLASTIC/EPOXY	POWER CONTROL		1.69 V	THROUGH-HOLE	RECTANGULAR	1		666 ns	3	FLANGE MOUNT		175 Cel	SILICON	950 V		-55 Cel	20 V		6.4 V		SINGLE	R-PSFM-T3				FAST SWITCHING	TO-247				102 ns
SGP23N60UFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	23 A	PLASTIC/EPOXY	POWER CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	320 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	450 ns	6.5 V		SINGLE	R-PSFM-T3				RC-IGBT	TO-220AB				55 ns
NGTB30N135IHR1WG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	394 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		443 ns	3	FLANGE MOUNT		175 Cel	SILICON	1350 V		-40 Cel	20 V		6.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3				RC-IGBT	TO-247	e3
NGTB30N60FLWG	Onsemi	N-CHANNEL		NO	250 W	60 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	TIN								e3
NGTB50N120FL2WAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	536 W	200 A	PLASTIC/EPOXY	POWER CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1		360 ns	4	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V	Tin (Sn)	SINGLE	R-PSFM-T4					TO-247	e3			68 ns
NGTB50N60SWG	Onsemi	N-CHANNEL		NO		100 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	MATTE TIN								e3
NGTB35N65FL2WG	Onsemi	N-CHANNEL		NO	300 W	70 A												Insulated Gate BIP Transistors	175 Cel		650 V			20 V		6.5 V	MATTE TIN								e3
FGH40N60UFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AB		NOT SPECIFIED	NOT SPECIFIED	69 ns
AFGHL40T65RQDN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	288 W	46 A	PLASTIC/EPOXY	POWER CONTROL		1.82 V	THROUGH-HOLE	RECTANGULAR	1		149 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.05 V	MATTE TIN	SINGLE	R-PSFM-T3	1	COLLECTOR			TO-247	e3	30	260	74 ns
ISL9V5045S3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	300 W	51 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	THROUGH-HOLE	RECTANGULAR	1	15000 ns	13600 ns	3	IN-LINE		175 Cel	SILICON	445 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V		SINGLE	R-PSIP-T3		COLLECTOR			TO-262AA				2800 ns
FPF2G75FH07BP	Onsemi	N-CHANNEL	COMPLEX	NO	236 W	75 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	6		462 ns	32	FLANGE MOUNT		150 Cel	SILICON	650 V		-40 Cel	25 V		6.8 V		UPPER	R-XUFM-X32				LOW CONDUCTION LOSS					124 ns
FGH40T100SMD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	333 W	80 A	PLASTIC/EPOXY	POWER CONTROL	64 ns	2.3 V	THROUGH-HOLE	RECTANGULAR	1	30 ns	305 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1000 V	100 ns	-55 Cel	20 V	397 ns	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB	e3			76 ns
AFGHL40T65SQ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	239 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		98 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3					TO-247	e3	NOT SPECIFIED	NOT SPECIFIED	39 ns	AEC-Q101
NGTB50N65FL2WAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	417 W	160 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		223 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T4					TO-247	e3			60 ns
NGTB50N60FL2WG	Onsemi	N-CHANNEL		NO	417 W	100 A												Insulated Gate BIP Transistors	175 Cel		600 V			20 V		6.5 V	Tin (Sn)								e3
NGTB40N120IHRWG	Onsemi	N-CHANNEL		NO	384 W	80 A												Insulated Gate BIP Transistors	175 Cel		1200 V			20 V		6.5 V	MATTE TIN								e3
NGTB40N65IHL2WG	Onsemi	N-CHANNEL		NO	300 W	80 A												Insulated Gate BIP Transistors	175 Cel		650 V			20 V		6.5 V	Matte Tin (Sn) - annealed								e3
HGTG20N60A4	Onsemi	N-CHANNEL	SINGLE	NO	290 W	70 A	PLASTIC/EPOXY	POWER CONTROL	18 ns		THROUGH-HOLE	RECTANGULAR	1	73 ns	160 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		7 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			28 ns
SGS10N60RUFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	16 A	PLASTIC/EPOXY	POWER CONTROL		2.8 V	THROUGH-HOLE	RECTANGULAR	1	350 ns	284 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	410 ns	8.5 V		SINGLE	R-PSFM-T3		ISOLATED		LOW CONDUCTION LOSS	TO-220AB				49 ns
NGTB20N120IHWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		395 ns	3	FLANGE MOUNT			SILICON	1200 V						TIN	SINGLE	R-PSFM-T3					TO-247	e3
AFGHL25T120RLD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	48 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		205 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	20 V		7.1 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			43.2 ns	AEC-Q101
FGH40N120ANTU	Onsemi	N-CHANNEL		NO	417 W	64 A								80 ns				Insulated Gate BIP Transistors	150 Cel		1200 V			25 V		7.5 V	Matte Tin (Sn) - annealed								e3
NGTB25N120FLWG	Onsemi	N-CHANNEL		NO	192 W	50 A												Insulated Gate BIP Transistors	150 Cel		1200 V			20 V		6.5 V	TIN								e3
NGTB40N120FL2WAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	536 W	160 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		360 ns	4	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T4					TO-247	e3			65 ns
NGTB30N120IHLWG	Onsemi	N-CHANNEL		NO	260 W	60 A												Insulated Gate BIP Transistors	150 Cel		1200 V			20 V		6.5 V	TIN								e3
NGTB75N65FL2WAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	536 W	200 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		262 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V	TIN	SINGLE	R-PSFM-T4					TO-247	e3			78 ns
FGH40T65SPD-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	267 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		48 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		RC-IGBT	TO-247	e3			56 ns	AEC-Q101
NGTB20N140IHR3WG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	278 W	40 A	PLASTIC/EPOXY	POWER CONTROL		1.92 V	THROUGH-HOLE	RECTANGULAR	1		333 ns	3	FLANGE MOUNT		175 Cel	SILICON	1400 V		-40 Cel	20 V		6.5 V	TIN	SINGLE	R-PSFM-T3					TO-247	e3
AFGH40T65SQDN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	238 W	80 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING			THROUGH-HOLE	RECTANGULAR	1		88.8 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V			Tin (Sn)	SINGLE	R-PSFM-T3		ISOLATED			TO-247AB	e3			27.2 ns	AEC-Q101
HGTG20N60B3	Onsemi	N-CHANNEL	SINGLE	NO		40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		360 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			45 ns
NGTB25N120LWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192 W	50 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		475 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			117 ns
NGTB20N60T2TF1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	56 W	40 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V			30 V		7 V		SINGLE	R-PSFM-T3		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	152 ns
NGTB30N60IHLWG	Onsemi	N-CHANNEL		NO	250 W	60 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	Tin (Sn)								e3
AFGHL40T120RLD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	529 W	48 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		276 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	20 V		7.3 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			80 ns	AEC-Q101
FPF2C8P2NL07A	Onsemi	N-CHANNEL	COMPLEX	NO	174 W	50 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	12		263 ns	34	FLANGE MOUNT		150 Cel	SILICON	650 V		-40 Cel	20 V		6.7 V		UPPER	R-XUFM-X34		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	115 ns
NGTB50N60S1WG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	417 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		341 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V		-55 Cel	20 V		6.5 V	TIN	SINGLE	R-PSFM-T3					TO-247AD	e3			139 ns
NGTB40N120L3WG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	454 W	160 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		376 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3				RC-IGBT	TO-247	e3			49 ns
HGTG12N60A4	Onsemi	N-CHANNEL	SINGLE	NO	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	95 ns	180 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	265 ns			SINGLE	R-PSFM-T3		COLLECTOR			TO-247				33 ns
NXH50C120L2C2ESG	Onsemi	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, 1 BRAKE IGBT, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO		50 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	7		616 ns	26	IN-LINE		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.8 V		DUAL	R-PDIP-T26		ISOLATED							248 ns
NGTG30N60FWG	Onsemi	N-CHANNEL		NO	167 W	60 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	Tin (Sn)								e3
NGTG15N120FL2WG	Onsemi	N-CHANNEL		NO	294 W	20 A												Insulated Gate BIP Transistors	175 Cel		1200 V			20 V		6.5 V	Matte Tin (Sn) - annealed								e3
FGH40T70SHD-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.15 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		175 Cel	SILICON	700 V		-55 Cel	20 V		7.5 V	Matte Tin (Sn)	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3	NOT SPECIFIED	NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.