NO Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

HGTP7N60A4-F102

Onsemi

N-CHANNEL

SINGLE

NO

125 W

34 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

85 ns

205 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

235 ns

7 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

17 ns

SNXH100M65L3Q2F2PG

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

NO

339 W

263 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

8

3780 ns

40

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

MATTE TIN

UPPER

R-XUFM-X40

ISOLATED

e3

357 ns

FGHL50T65MQDTL4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

373 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T4

TO-247

e3

77 ns

FGI3040G2-F085

Onsemi

N-CHANNEL

NO

150 W

41 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

390 V

12 V

2.2 V

NOT SPECIFIED

NOT SPECIFIED

FGPF4536TU

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

292 ns

3

FLANGE MOUNT

150 Cel

SILICON

360 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

25.6 ns

FGI3236-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

187 W

44 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

THROUGH-HOLE

RECTANGULAR

1

15000 ns

7040 ns

3

IN-LINE

Insulated Gate BIP Transistors

175 Cel

SILICON

350 V

12 V

2.2 V

MATTE TIN

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

TO-262AA

e3

2350 ns

FGA30N65SMD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

125 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

e3

41 ns

SNXH150B120H3Q2F2PG-R

Onsemi

N-CHANNEL

SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

279 W

80 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

3

239 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X35

ISOLATED

RC-IGBT

64 ns

NGP8203NG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

18500 ns

3

FLANGE MOUNT

175 Cel

SILICON

440 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

6500 ns

FGH75T65SQDNL4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

467 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

5.6 V

MATTE TIN

SINGLE

R-PSFM-T4

TO-247

e3

113 ns

MGP4N60E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 W

6 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

396 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-220AB

e0

65 ns

MGS05N60D

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

.5 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

ROUND

1

301 ns

3

CYLINDRICAL

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

HIGH SPEED SWITCHING

TO-226AE

e0

FGH75T65SHDT-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

455 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

109 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

89 ns

FGA50N100BNTD2

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

100 ns

308 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

25 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

e3

102 ns

HGTP12N60A4D

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

167 W

54 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

95 ns

180 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

265 ns

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

33 ns

MGY20N120D

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

174 W

28 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

710 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

HIGH SPEED SWITCHING, ULTRA FAST SOFT RECOVERY

TO-264AA

e0

190 ns

FGAF40N60UFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

190 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

67 ns

AFGY120T65SPD-B4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

882 W

240 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

247 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.2 V

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

183 ns

AEC-Q101

FGA70N33BTDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

149 W

220 A

UNSPECIFIED

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

244 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

-55 Cel

30 V

4.3 V

SINGLE

R-XSFM-T3

NOT SPECIFIED

NOT SPECIFIED

39 ns

FGHL50T65MQD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

SGH30N60RUFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

235 W

48 A

PLASTIC/EPOXY

MOTOR CONTROL

2.8 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

341 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

490 ns

8.5 V

SINGLE

R-PSFM-T3

101 ns

FGH30T65UPD_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

170 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AB

NOT SPECIFIED

NOT SPECIFIED

52 ns

FGA50N100BNTD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

760 ns

3

FLANGE MOUNT

150 Cel

SILICON

1000 V

SINGLE

R-PSFM-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

460 ns

FGH20N60UFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

165 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

64 ns

155 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AB

e3

29 ns

FGH75T65UPD-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

150 A

PLASTIC/EPOXY

POWER CONTROL

56 ns

2.3 V

THROUGH-HOLE

RECTANGULAR

1

33 ns

197 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

98 ns

-55 Cel

20 V

249 ns

7.5 V

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

87 ns

FGPF4633TU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

394 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

e3

40 ns

FGA6530WDF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

176 W

60 A

PLASTIC/EPOXY

SWITCHING

2.3 V

THROUGH-HOLE

RECTANGULAR

1

59.2 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.6 V

MATTE TIN

SINGLE

R-PSFM-T3

e3

40 ns

SGH40N60UFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

254 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

e3

67 ns

FGA30N120FTDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

339 W

60 A

UNSPECIFIED

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

575 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

25 V

7.5 V

MATTE TIN

SINGLE

R-XSFM-T3

Not Qualified

e3

167 ns

FGA30N60LSDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

480 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

2000 ns

2870 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

e3

62 ns

FGA90N33ATTU

Onsemi

N-CHANNEL

SINGLE

NO

223 W

330 A

UNSPECIFIED

POWER CONTROL

1.4 V

THROUGH-HOLE

RECTANGULAR

1

240 ns

280 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

-55 Cel

30 V

5.5 V

SINGLE

R-XSFM-T3

NOT SPECIFIED

NOT SPECIFIED

63 ns

NXH240B120H3Q1PG

Onsemi

N-CHANNEL

COMPLEX

NO

158 W

68 A

UNSPECIFIED

MOTOR CONTROL

2 V

UNSPECIFIED

RECTANGULAR

3

337 ns

32

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

Matte Tin (Sn) - annealed

UPPER

R-XUFM-X32

ISOLATED

e3

NOT SPECIFIED

NOT SPECIFIED

54 ns

MGY25N120

Onsemi

N-CHANNEL

SINGLE

NO

212 W

38 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

876 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

HIGH SPEED

TO-264AA

e0

214 ns

SGF80N60UFTU

Onsemi

N-CHANNEL

SINGLE

NO

80 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

e3

85 ns

FGH75T65SQDT_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

135 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

45 ns

HGTP20N60A4

Onsemi

N-CHANNEL

SINGLE

NO

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e3

28 ns

SNXH160B120L2Q0PG-N

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

167 W

75 A

UNSPECIFIED

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

2

359 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

ISOLATED

80 ns

FGH30T65UPDT-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

170 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

7.5 V

TIN

SINGLE

R-PSFM-T3

1

COLLECTOR

TO-247AB

e3

52 ns

FGPF70N33BTTU

Onsemi

N-CHANNEL

SINGLE

NO

48 W

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

316 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

-55 Cel

30 V

4.3 V

SINGLE

R-PSFM-T3

ISOLATED

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

41 ns

FGAF40S65AQ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

80 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

2.1 V

THROUGH-HOLE

RECTANGULAR

1

90.8 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

ISOLATED

e3

NOT SPECIFIED

NOT SPECIFIED

30.3 ns

SGF5N150UF

Onsemi

N-CHANNEL

SINGLE

NO

62.5 W

10 A

PLASTIC/EPOXY

POWER CONTROL

5.5 V

THROUGH-HOLE

RECTANGULAR

1

120 ns

100 ns

3

FLANGE MOUNT

150 Cel

SILICON

1500 V

-55 Cel

20 V

170 ns

4 V

SINGLE

R-PSFM-T3

25 ns

FGA6540WDF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

238 W

80 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

2.3 V

THROUGH-HOLE

RECTANGULAR

1

70.4 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.6 V

MATTE TIN

SINGLE

R-PSFM-T3

e3

51.2 ns

NXH25C120L2C2SG

Onsemi

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

7

320 ns

26

IN-LINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.8 V

DUAL

R-PDIP-T26

ISOLATED

128 ns

SGF23N60UFTU

Onsemi

N-CHANNEL

SINGLE

NO

30 W

23 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

250 ns

320 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

e3

55 ns

FGA40T65SHD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

85.6 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

e3

NOT SPECIFIED

NOT SPECIFIED

51.2 ns

FGAF20N60SMD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

40 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

27 ns

109 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

e3

31 ns

FGPF50N33BT

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

365 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

46 ns

MGP20N35CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

150 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

320 V

15 V

2.4 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e0

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.