NO Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXGH36N60B3C1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	75 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1	160 ns	225 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V	360 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	46 ns
IXGH36N60B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	36 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1	160 ns	225 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V	360 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	43 ns
IXGH39N60B	IXYS Corporation	N-CHANNEL	SINGLE	NO	200 W	76 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	360 ns	710 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD		NOT SPECIFIED	NOT SPECIFIED	55 ns
IXGH40N60B2	IXYS Corporation	N-CHANNEL	SINGLE	NO		75 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		390 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V							SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD		NOT SPECIFIED	NOT SPECIFIED	38 ns
IXGH50N60A	IXYS Corporation	N-CHANNEL	SINGLE	NO	250 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	200 ns	880 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	250 W	150 Cel	SILICON	600 V			20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e1			290 ns
IXGK400N30A3	Littelfuse	N-CHANNEL	SINGLE	NO	1000 W	400 A	PLASTIC/EPOXY	POWER CONTROL		1.15 V	THROUGH-HOLE	RECTANGULAR	1		555 ns	3	FLANGE MOUNT			150 Cel	SILICON	300 V		-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR			TO-264AA	e1	10	260	100 ns
IXGM40N60A	IXYS Corporation	N-CHANNEL	SINGLE	NO	250 W	75 A	METAL	POWER CONTROL		3 V	PIN/PEG	ROUND	1		900 ns	2	FLANGE MOUNT	Insulated Gate BIP Transistors	250 W	150 Cel	SILICON	600 V			20 V		5 V		BOTTOM	O-MBFM-P2		COLLECTOR	Not Qualified	HIGH SPEED	TO-204AE		NOT SPECIFIED	NOT SPECIFIED	300 ns
IXGN200N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	300 A	PLASTIC/EPOXY	POWER CONTROL		1.5 V	UNSPECIFIED	RECTANGULAR	1	300 ns	493 ns	4	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V	750 ns	5 V	NICKEL	UPPER	R-PUFM-X4		ISOLATED							127 ns	UL RECOGNIZED
IXGP16N60C2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		190 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5.5 V	PURE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB				43 ns
IXGR32N170AH1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		26 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		370 ns	3	FLANGE MOUNT			150 Cel	SILICON	1700 V						TIN SILVER COPPER	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e1			107 ns	UL RECOGNIZED
IXGR32N60CD1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	45 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		210 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	FAST		e1			50 ns
IXGT16N170	Littelfuse	N-CHANNEL	SINGLE	NO	190 W	32 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	1100 ns	1600 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1700 V			20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3	1	COLLECTOR	Not Qualified		TO-247AD	e3	10	260	90 ns
IXSH24N60AU1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	48 A	PLASTIC/EPOXY	MOTOR CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	500 ns	925 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	600 V			20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247		NOT SPECIFIED	NOT SPECIFIED	300 ns
IXSH45N120	IXYS Corporation	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		1650 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	300 W	150 Cel	SILICON	1200 V			20 V				SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD		NOT SPECIFIED	NOT SPECIFIED	330 ns
IXSK35N120AU1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	70 A	PLASTIC/EPOXY	MOTOR CONTROL		4 V	THROUGH-HOLE	RECTANGULAR	1		1100 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	300 W	150 Cel	SILICON	1200 V			20 V		8 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-264		NOT SPECIFIED	NOT SPECIFIED	230 ns
IXSN55N120A	IXYS Corporation	N-CHANNEL	SINGLE	NO		80 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1		600 ns	4	FLANGE MOUNT				SILICON	1200 V						NICKEL	UPPER	R-XUFM-X4		ISOLATED	Not Qualified						140 ns
IXXH100N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	190 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	95 ns
IXXH75N60B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	160 A	PLASTIC/EPOXY	POWER CONTROL		1.85 V	THROUGH-HOLE	RECTANGULAR	1		315 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	108 ns
IXXK200N65B4	Littelfuse	N-CHANNEL	SINGLE	NO	1630 W	480 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	THROUGH-HOLE	RECTANGULAR	1		370 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR			TO-264AA	e1	10	260	135 ns
IXXN340N65B4	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	520 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	UNSPECIFIED	RECTANGULAR	1		346 ns	4	FLANGE MOUNT			175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V		UPPER	R-PUFM-X4		ISOLATED		LOW CONDUCTION LOSS					119 ns	UL RECOGNIZED
IXYH16N170CV1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	310 W	40 A	PLASTIC/EPOXY	POWER CONTROL		3.8 V	THROUGH-HOLE	RECTANGULAR	1		315 ns	3	FLANGE MOUNT			175 Cel	SILICON	1700 V		-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				35 ns
IXYH30N170C	Littelfuse	N-CHANNEL	SINGLE	NO	937 W	100 A	PLASTIC/EPOXY	POWER CONTROL		4 V	THROUGH-HOLE	RECTANGULAR	1		327 ns	3	FLANGE MOUNT			175 Cel	SILICON	1700 V		-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				49 ns
IXYH50N65C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	132 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		145 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	56 ns
IXYH75N65C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	170 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		166 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	83 ns
IXYH8N250CHV	Littelfuse	N-CHANNEL	SINGLE	NO	280 W	29 A	PLASTIC/EPOXY	POWER CONTROL		4 V	THROUGH-HOLE	RECTANGULAR	1		328 ns	3	FLANGE MOUNT			175 Cel	SILICON	2500 V		-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				24 ns
IXYK100N65B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	830 W	225 A	PLASTIC/EPOXY	POWER CONTROL		1.85 V	THROUGH-HOLE	RECTANGULAR	1		358 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-264AA				65 ns
IXYK110N120B4	Littelfuse	N-CHANNEL	SINGLE	NO	1360 W	340 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		520 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-264AA				95 ns
IXYK140N90C3	Littelfuse	N-CHANNEL	SINGLE	NO	1630 W	310 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1		300 ns	3	FLANGE MOUNT			175 Cel	SILICON	900 V		-55 Cel	20 V		5.5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR			TO-264AA	e1	10	260	122 ns
IXYN100N65A3	Littelfuse	N-CHANNEL	SINGLE	NO	600 W	170 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	UNSPECIFIED	RECTANGULAR	1		360 ns	4	FLANGE MOUNT			175 Cel	SILICON	650 V		-55 Cel	20 V		6 V		UPPER	R-PUFM-X4		ISOLATED		LOW CONDUCTION LOSS					68 ns	UL RECOGNIZED
IXYN110N120A4	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	275 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	UNSPECIFIED	RECTANGULAR	1		850 ns	4	FLANGE MOUNT			175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		UPPER	R-PUFM-X4		ISOLATED							78 ns	UL RECOGNIZED
IXYN80N90C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	115 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	1		201 ns	4	FLANGE MOUNT			150 Cel	SILICON	900 V		-55 Cel	20 V		5.5 V		UPPER	R-PUFM-X4		ISOLATED							134 ns	UL RECOGNIZED
IXYP60N65A5	Littelfuse	N-CHANNEL	SINGLE	NO	395 W	134 A	PLASTIC/EPOXY	POWER CONTROL		1.35 V	THROUGH-HOLE	RECTANGULAR	1		340 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-55 Cel	20 V		5.8 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				60 ns
IXYX200N65B3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN RESISTOR	NO	1560 W	410 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	THROUGH-HOLE	RECTANGULAR	1		700 ns	3	IN-LINE			175 Cel	SILICON	650 V		-55 Cel	20 V		6 V		SINGLE	R-PSIP-T3		COLLECTOR							170 ns
IXYX25N250CV1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	937 W	95 A	PLASTIC/EPOXY	POWER CONTROL		4 V	THROUGH-HOLE	RECTANGULAR	1		575 ns	3	IN-LINE			175 Cel	SILICON	2500 V		-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3		COLLECTOR							51 ns
IXYX50N170C	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	178 A	PLASTIC/EPOXY	POWER CONTROL		3.7 V	THROUGH-HOLE	RECTANGULAR	1		396 ns	3	IN-LINE			175 Cel	SILICON	1700 V		-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3		COLLECTOR							62 ns
MG100Q2YS42	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	700 W	100 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors	700 W	150 Cel	SILICON	1200 V			20 V		6 V		UPPER	R-XUFM-X7		ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED
MG150J2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		150 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	UNSPECIFIED	RECTANGULAR	2	350 ns		7	FLANGE MOUNT				SILICON	600 V							UPPER	R-PUFM-X7			Not Qualified	HIGH SPEED
MG15J6ES1	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		15 A	PLASTIC/EPOXY	MOTOR CONTROL			SOLDER LUG	RECTANGULAR	6		500 ns	15	FLANGE MOUNT			150 Cel	SILICON	600 V							UPPER	R-PUFM-D15		ISOLATED	Not Qualified						400 ns
MG200J2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	900 W	200 A	UNSPECIFIED	MOTOR CONTROL	300 ns	2.7 V	UNSPECIFIED	RECTANGULAR	2	300 ns	200 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	900 W	150 Cel	SILICON	600 V	300 ns		20 V	400 ns	8 V		UPPER	R-XUFM-X7		ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	240	150 ns
MG200N1US1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1200 W	200 A	PLASTIC/EPOXY	MOTOR CONTROL		5 V	UNSPECIFIED	RECTANGULAR	1		1200 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V							UPPER	R-PUFM-X4		ISOLATED	Not Qualified	HIGH SPEED SWITCHING					900 ns
MG200Q2YS91	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2			7	FLANGE MOUNT				SILICON	1200 V							UPPER	R-PUFM-X7			Not Qualified
MG300J1US1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		300 A	PLASTIC/EPOXY	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	1	350 ns		4	FLANGE MOUNT				SILICON	600 V							UPPER	R-PUFM-X4			Not Qualified	HIGH SPEED
MG300Q1US1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		300 A	PLASTIC/EPOXY	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		4	FLANGE MOUNT				SILICON	1200 V							UPPER	R-PUFM-X4			Not Qualified	HIGH SPEED
MG300Q1US41	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2000 W	300 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	1	500 ns	800 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	2000 W	150 Cel	SILICON	1200 V			20 V		6 V		UPPER	R-XUFM-X4		ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
MG50H2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		900 ns	7	FLANGE MOUNT				SILICON	500 V							UPPER	R-PUFM-X7		ISOLATED	Not Qualified	HIGH SPEED					600 ns
MG50Q1BS11	Toshiba	N-CHANNEL	SINGLE	NO	300 W	50 A	UNSPECIFIED	MOTOR CONTROL	600 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	1000 ns	1200 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	300 W	150 Cel	SILICON	1200 V			20 V		6 V		UPPER	R-XUFM-X3		ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
MG75J2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	UNSPECIFIED	RECTANGULAR	2	350 ns		7	FLANGE MOUNT				SILICON	600 V							UPPER	R-PUFM-X7			Not Qualified	HIGH SPEED
MG90V2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1100 W	90 A	UNSPECIFIED	MOTOR CONTROL		4.5 V	UNSPECIFIED	RECTANGULAR	2	1500 ns	400 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	1100 W	150 Cel	SILICON	1700 V			20 V		8 V		UPPER	R-XUFM-X7		ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	100 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.