Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
1 |
20500 ns |
3 |
FLANGE MOUNT |
SILICON |
380 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
6000 ns |
|||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
103 W |
41 A |
METAL |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
2 |
299 ns |
22 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-MUFM-X22 |
ISOLATED |
47 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
188 W |
75 A |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
UNSPECIFIED |
RECTANGULAR |
4 |
750 ns |
20 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
98 ns |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
107 W |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
15000 ns |
15500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
440 V |
15 V |
2.1 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e0 |
235 |
5700 ns |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
110 W |
18 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
420 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
8 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-220AB |
e0 |
235 |
62 ns |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
160 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
250 ns |
254 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
450 ns |
6.5 V |
SINGLE |
R-PSFM-T3 |
67 ns |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
882 W |
240 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.05 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
308 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.3 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
288 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
633 W |
280 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
2 |
978 ns |
36 |
FLANGE MOUNT |
125 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
5.2 V |
UPPER |
R-XUFM-X36 |
ISOLATED |
192 ns |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
469 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.35 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
660 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6 V |
MATTE TIN |
SINGLE |
R-PSFM-T4 |
TO-247 |
e3 |
60 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
480 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
2000 ns |
2870 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
7 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
62 ns |
|||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1 W |
.5 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
ROUND |
1 |
301 ns |
3 |
CYLINDRICAL |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
15 V |
6 V |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
HIGH SPEED |
TO-226AE |
e0 |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
238 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
113 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
40 ns |
|||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
167 W |
54 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
95 ns |
180 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
265 ns |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
33 ns |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 W |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
410 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
20 V |
5 V |
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
78 ns |
||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
165 W |
19 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
6000 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
22000 ns |
25000 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
380 V |
22 V |
2 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e0 |
235 |
6500 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
231 W |
80 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
1.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
340 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
58 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
375 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
184 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
70 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
156 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.9 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
100 ns |
308 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1000 V |
-55 Cel |
25 V |
7 V |
SINGLE |
R-PSFM-T3 |
NOT SPECIFIED |
NOT SPECIFIED |
102 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
160 W |
40 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
280 ns |
254 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
7.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING |
e3 |
67 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
882 W |
160 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.05 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.3 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
AEC-Q101 |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
40 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
250 ns |
190 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
450 ns |
6.5 V |
SINGLE |
R-PSFM-T3 |
LOW CONDUCTION LOSS |
67 ns |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
146 W |
42 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
12 |
305 ns |
44 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X44 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
83 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
268 W |
80 A |
PLASTIC/EPOXY |
1.81 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
233.2 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
LOW CONDUCTION LOSS |
e3 |
106.4 ns |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
298 W |
120 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.9 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
80 ns |
218 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
RC-IGBT |
TO-247AB |
e3 |
83 ns |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
83 W |
10 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
187 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
4.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
e3 |
5.9 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
60 W |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
360 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
6 V |
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
250 ns |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
186 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
2 |
291 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
RC-IGBT |
61 ns |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
313 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
53 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
132 ns |
299 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
25 V |
7.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AB |
e3 |
63 ns |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
14 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
490 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
20 ns |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
136 W |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
350 V |
17 V |
2.1 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOGIC LEVEL |
TO-220AB |
e0 |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
600 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.35 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
368 W |
70 A |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
25 V |
7.5 V |
MATTE TIN |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
40 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
12 |
44 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X44 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
146 W |
42 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
12 |
305 ns |
44 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X44 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
83 ns |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
NO |
60 W |
36 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
6 V |
||||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
96 W |
26 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
7 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e0 |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
100 ns |
3 |
FLANGE MOUNT |
SILICON |
650 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
TO-247AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
84.8 ns |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
339 W |
263 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
8 |
3780 ns |
40 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
Matte Tin (Sn) - annealed |
UPPER |
R-XUFM-X40 |
ISOLATED |
e3 |
357 ns |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
81 W |
10 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
415 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
8 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED SWITCHING, ULTRA FAST SOFT RECOVERY |
TO-220AB |
e0 |
55 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
186 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
2 |
291 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
Matte Tin (Sn) - annealed |
UPPER |
R-XUFM-X22 |
ISOLATED |
RC-IGBT |
e3 |
61 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
167 W |
75 A |
UNSPECIFIED |
POWER CONTROL |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
2 |
359 ns |
20 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
80 ns |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
140 W |
31 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
558 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
8 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-220AB |
e0 |
90 ns |
|||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
298 W |
43 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
16 ns |
2.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
550 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
42 ns |
-55 Cel |
20 V |
680 ns |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
AVALANCHE RATED |
TO-220AB |
33 ns |
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|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
159 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AB |
e3 |
87 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
35 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.4 V |
THROUGH-HOLE |
RECTANGULAR |
6 |
485 ns |
26 |
IN-LINE |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.8 V |
DUAL |
R-PDIP-T26 |
ISOLATED |
240 ns |
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|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
238 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
107 W |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
15000 ns |
15500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
440 V |
15 V |
2.1 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e3 |
260 |
5700 ns |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
959 W |
409 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
4 |
619 ns |
42 |
FLANGE MOUNT |
175 Cel |
SILICON |
1000 V |
-40 Cel |
20 V |
6.1 V |
UPPER |
R-XUFM-X42 |
ISOLATED |
186 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.