Fairchild Semiconductor Insulated Gate Bipolar Transistors (IGBT) 34

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
FGH40T120SMD_F155	Fairchild Semiconductor	N-CHANNEL		NO	555 W	80 A												Insulated Gate BIP Transistors	175 Cel		1200 V		25 V	7.5 V	MATTE TIN								e3
FGH60N60SMD_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		120 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		139 ns	3	FLANGE MOUNT			SILICON	600 V					SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	66 ns	AEC-Q101
FGH40N60SMD_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	349 W	80 A	PLASTIC/EPOXY	POWER CONTROL	36.4 ns		THROUGH-HOLE	RECTANGULAR	1	81 ns	172.5 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V	6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	43.7 ns	AEC-Q101
FGA25N120ANTDTU_NL	Fairchild Semiconductor	N-CHANNEL		NO	312 W	25 A			90 ns					180 ns				Insulated Gate BIP Transistors	150 Cel		1200 V		20 V	7.5 V	Matte Tin (Sn)								e3
FGD3040G2_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	23.2 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns		2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	390 V		14 V	2.2 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252	e3	30	260
ISL9V5036P3_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	250 W	46 A	PLASTIC/EPOXY	POWER CONTROL	7000 ns		THROUGH-HOLE	RECTANGULAR	1	15000 ns	13600 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	360 V		12 V	2.2 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOGIC LEVEL COMPATIBLE	TO-220AB	e3			2800 ns
HGTG30N60C3D_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	63 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	275 ns	550 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	6 V		SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-247		NOT SPECIFIED	NOT SPECIFIED	85 ns
FGB20N60SFD_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		40 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		123 ns	2	SMALL OUTLINE			SILICON	600 V					SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB			260	28 ns	AEC-Q101
HGTG40N60C3	Fairchild Semiconductor	N-CHANNEL	SINGLE	NO	291 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	210 ns	460 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	6 V	TIN LEAD	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-247	e0			71 ns
HGTG11N120CND_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	298 W	43 A	PLASTIC/EPOXY	MOTOR CONTROL	16 ns		THROUGH-HOLE	RECTANGULAR	1	400 ns	570 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-247		NOT SPECIFIED	NOT SPECIFIED	33 ns
FGH75T65UPD_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		150 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		197 ns	3	FLANGE MOUNT			SILICON	650 V					SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	87 ns	AEC-Q101
FGA90N30D	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	219 W	90 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	300 ns	310 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		30 V	5 V		SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS					240 ns
FGA90N30DTU	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	219 W	90 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	300 ns	310 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		30 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS		e3			240 ns
HGTD3N60C3S9A	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	33 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1	275 ns	455 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			6 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-252AA	e3			15 ns
FMG1G200US60L	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	695 W	200 A	UNSPECIFIED	MOTOR CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	1		410 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V			UPPER	R-XUFM-X7		ISOLATED	Not Qualified						330 ns	UL RECOGNIZED
HGTG12N60A4D_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	95 ns	180 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V			SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247		NOT SPECIFIED	NOT SPECIFIED	33 ns
FGB3440G2_F085	Fairchild Semiconductor	N-CHANNEL		YES	166 W	26.9 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		390 V		12 V	2.2 V				1
FGH60N60SFDTU_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE	NO	378 W	120 A	PLASTIC/EPOXY	POWER CONTROL		2.9 V	THROUGH-HOLE	RECTANGULAR	1	62 ns	166 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	6.6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		RC-IGBT	TO-247	e3			76 ns	AEC-Q101
HGTG40N60C3R	Fairchild Semiconductor	N-CHANNEL	SINGLE	NO		75 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		460 ns	3	FLANGE MOUNT			SILICON	600 V					SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-247				71 ns
FGB3245G2_F085	Fairchild Semiconductor	N-CHANNEL		YES	150 W	23 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		440 V		12 V	2.2 V				1							260
FGH15T120SMD_F155	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	333 W	30 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		534 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V		25 V	7.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB	e3			74 ns
FMG1G100US60L	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	100 A	PLASTIC/EPOXY	MOTOR CONTROL		2.8 V	UNSPECIFIED	RECTANGULAR	1		320 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	600 V		20 V			UPPER	R-PUFM-X7		ISOLATED	Not Qualified	LOW CONDUCTION LOSS			NOT SPECIFIED	NOT SPECIFIED	85 ns
FGD3440G2_F085	Fairchild Semiconductor	N-CHANNEL		YES	166 W	26.9 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		450 V		14 V	2.2 V	MATTE TIN			1					e3	30	260
HGTG20N60C3D	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	164 W	45 A	PLASTIC/EPOXY	MOTOR CONTROL	28 ns		THROUGH-HOLE	RECTANGULAR	1	210 ns	388 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	6.3 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			52 ns
HGTG20N60C3R	Fairchild Semiconductor	N-CHANNEL	SINGLE	NO		45 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		388 ns	3	FLANGE MOUNT			SILICON	600 V					SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247				52 ns
FGH20N6S2D	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	28 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	105 ns	205 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			11.5 ns
FGH60N6S2	Fairchild Semiconductor	N-CHANNEL	SINGLE	NO	625 W	75 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	90 ns	187 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			59 ns
HGT1N40N60A4D	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	298 W	110 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1	95 ns	240 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	7 V		UPPER	R-PUFM-X4	1	ISOLATED	Not Qualified	LOW CONDUCTION LOSS					47 ns
FGL40N150D	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	40 A	PLASTIC/EPOXY	POWER CONTROL	700 ns		THROUGH-HOLE	RECTANGULAR	1	300 ns	300 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1500 V		25 V	7.5 V	TIN LEAD	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING	TO-264AA	e0			450 ns
FGP30N6S2D	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	45 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	100 ns	163 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			28 ns
SGL160N60UFTU	Fairchild Semiconductor	N-CHANNEL	SINGLE	NO	250 W	160 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	150 ns	262 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING	TO-264AA	e3			150 ns
FGB3040G2_F085	Fairchild Semiconductor	N-CHANNEL		YES	150 W	41 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		390 V		12 V	2.2 V				1							260
FGH60T65SHD_F155	Fairchild Semiconductor																																	NOT SPECIFIED	NOT SPECIFIED
FGP3440G2_F085	Fairchild Semiconductor	N-CHANNEL		NO	166 W	26.9 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		390 V		12 V	2.2 V										NOT SPECIFIED	NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.