Insulated Gate Bipolar Transistors (IGBT)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IXGH48N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

120 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

925 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

54 ns

IXGH48N60A3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

48 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

925 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

54 ns

IXGH50N90B2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

820 ns

3

FLANGE MOUNT

150 Cel

SILICON

900 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

48 ns

IXGT6N170AHV-TRL

IXYS Corporation

N-CHANNEL

SINGLE

YES

75 W

6 A

PLASTIC/EPOXY

POWER CONTROL

7 V

GULL WING

RECTANGULAR

1

271 ns

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

-55 Cel

20 V

5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

91 ns

IXXH110N65C4

Littelfuse

N-CHANNEL

SINGLE

NO

880 W

235 A

PLASTIC/EPOXY

POWER CONTROL

2.35 V

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

71 ns

NGTB50N60FLWG

Onsemi

N-CHANNEL

NO

223 W

100 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

Tin (Sn)

e3

SGW20N60HS

Infineon Technologies

N-CHANNEL

SINGLE

NO

178 W

36 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

235 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

30 ns

SGW20N60HSFKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

36 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

235 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

30 ns

SGW20N60XK

Infineon Technologies

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

313 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

66 ns

SGW25N120FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

46 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

862 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

86 ns

SK75GD12T4T

Semikron International

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

102 A

UNSPECIFIED

2.05 V

UNSPECIFIED

RECTANGULAR

6

601 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

128 ns

SK75GD12T4TP

Semikron International

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

87 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

601 ns

22

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

128 ns

IEC-60747-1; UL RECOGNIZED

SKIIP03NEB066V3

Semikron International

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

POWER CONTROL

1.85 V

UNSPECIFIED

RECTANGULAR

7

200 ns

18

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X18

ISOLATED

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

50 ns

UL RECOGNIZED

SKIIP25AC126V1

Semikron International

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

73 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

530 ns

42

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN/SILVER

UPPER

R-XUFM-X42

ISOLATED

Not Qualified

HIGH RELIABILITY

e3/e4

NOT SPECIFIED

NOT SPECIFIED

115 ns

UL RECOGNIZED

SKIIP35NAB126V10

Semikron International

N-CHANNEL

COMPLEX

NO

73 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

7

520 ns

30

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X30

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

115 ns

IEC-60747-1; UL RECOGNIZED

SKIIP39AC126V2

Semikron International

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

157 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

600 ns

68

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN/SILVER

UPPER

R-XUFM-X68

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

120 ns

UL RECOGNIZED

SKM300GB066D

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

390 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

2

593 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

TIN/SILVER

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

198 ns

UL RECOGNIZED

SKM300GB125D

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

300 A

UNSPECIFIED

POWER CONTROL

3.85 V

UNSPECIFIED

RECTANGULAR

2

490 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN SILVER

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e2

170 ns

UL RECOGNIZED

STGB18N40LZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

30 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

22200 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

420 V

16 V

2.3 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

TO-263AB

e3

4450 ns

STGB7H60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88 W

14 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

GULL WING

RECTANGULAR

1

263 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-55 Cel

20 V

6.9 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

42.8 ns

STGD10HF60KD

STMicroelectronics

N-CHANNEL

YES

62.5 W

18 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

Matte Tin (Sn) - annealed

1

e3

30

260

STGF10NB60SD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

23 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3100 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

1160 ns

STGF20H65DFB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

178 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

26 ns

STGIPL14K60-S

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STGP100N30

STMicroelectronics

N-CHANNEL

SINGLE

NO

250 W

90 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

330 V

20 V

5.5 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STGP10M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

115 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

260 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

27 ns

STGW20H65FB

STMicroelectronics

N-CHANNEL

NO

168 W

40 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

7 V

NOT SPECIFIED

NOT SPECIFIED

STGW20IH125DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

285 ns

3

FLANGE MOUNT

SILICON

1250 V

-55 Cel

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

STGW30H60DFB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

223 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

51.1 ns

STGW40H120DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

468 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

351 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

56 ns

VS-GB90DA120U

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

862 W

149 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

420 ns

4

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

NICKEL

UPPER

R-PUFM-X4

ISOLATED

293 ns

UL RECOGNIZED

VS-GT80DA120U

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

658 W

139 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

436 ns

4

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-PUFM-X4

ISOLATED

199 ns

UL RECOGNIZED

VS-GT90DA120U

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

781 W

169 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

1

270 ns

4

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7.6 V

UPPER

R-PUFM-X4

ISOLATED

61 ns

UL APPROVED

7MBR150VN120-50

Fuji Electric

N-CHANNEL

COMPLEX

NO

885 W

150 A

UNSPECIFIED

POWER CONTROL

2.9 V

UNSPECIFIED

RECTANGULAR

7

530 ns

22

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X22

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

390 ns

7MBR50SB120-50

Fuji Electric

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

530 ns

24

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

600 ns

AFGB40T65RQDN

Onsemi

AFGHL50T65SQ

Onsemi

N-CHANNEL

SINGLE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

AOK30B60D1

Alpha & Omega Semiconductor

N-CHANNEL

NO

208 W

60 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

APT25GT120BRG

Microchip Technology

N-CHANNEL

SINGLE

NO

54 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AA

e1

41 ns

APT30GS60BRDQ2(G)

Microsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

54 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

412 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e1

45 ns

APT30GS60BRDQ2G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

54 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

412 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e1

45 ns

APT40GP90JDQ2

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

64 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

220 ns

4

FLANGE MOUNT

150 Cel

SILICON

900 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

37 ns

UL RECOGNIZED

APT45GP120JDQ2

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

329 W

75 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

230 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

TIN SILVER COPPER

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

e1

47 ns

APT50GT120JU2

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

347 W

75 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

610 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED, LOW CONDUCTION LOSS

NOT SPECIFIED

NOT SPECIFIED

135 ns

APT60GT60JRD

Microchip Technology

378 W

60 A

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

APT60GT60JRDQ3

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

379 W

105 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

320 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

TIN SILVER COPPER

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

e1

51 ns

APTGT150H60TG

Microchip Technology

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

225 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

370 ns

14

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN SILVER COPPER

UPPER

R-XUFM-X14

1

ISOLATED

Not Qualified

AVALANCHE RATED

e1

180 ns

AUIRGP4062D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

THROUGH-HOLE

RECTANGULAR

1

41 ns

164 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

64 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.