Insulated Gate Bipolar Transistors (IGBT)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FF650R17IE4VBOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

930 A

PLASTIC/EPOXY

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

2

1870 ns

10

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-PUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

720 ns

FGA15N120ANTDTU-F109

Onsemi

N-CHANNEL

NO

186 W

30 A

180 ns

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

8.5 V

FGD3440G2-F085

Onsemi

N-CHANNEL

YES

166 W

26.9 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

450 V

14 V

2.2 V

Matte Tin (Sn) - annealed

1

e3

30

260

FGD3440G2_F085

Fairchild Semiconductor

N-CHANNEL

YES

166 W

26.9 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

450 V

14 V

2.2 V

MATTE TIN

1

e3

30

260

FGPF15N60UNDF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

42 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

12.8 ns

69.8 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8.5 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

18.8 ns

FP15R12W1T4PBPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

28 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

495 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

120 ns

FP40R12KT3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

210 W

55 A

UNSPECIFIED

2.3 V

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

FP40R12KT3BPSA1

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

FP40R12KT3G

Infineon Technologies

N-CHANNEL

COMPLEX

NO

210 W

55 A

UNSPECIFIED

2.3 V

UNSPECIFIED

RECTANGULAR

7

610 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

FP50R12KT3BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

610 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

FS380R12A6T4BBPSA1

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

HGTG20N60C3D

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

164 W

45 A

PLASTIC/EPOXY

MOTOR CONTROL

28 ns

THROUGH-HOLE

RECTANGULAR

1

210 ns

388 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.3 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS

TO-247

e3

52 ns

HGTG30N60A4

Onsemi

N-CHANNEL

SINGLE

NO

463 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

70 ns

238 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247

e3

35 ns

IKB06N60TATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

249 ns

3

SMALL OUTLINE

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSSO-G3

1

COLLECTOR

Not Qualified

TO-263AB

e3

17 ns

IKW30N65WR5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

429 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

49 ns

IKW50N60TXK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

396 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

60 ns

IKW75N65ES5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.75 V

THROUGH-HOLE

RECTANGULAR

1

233 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

94 ns

IKY50N120CH3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

462 ns

4

FLANGE MOUNT

SILICON

1200 V

-40 Cel

TIN

SINGLE

R-PSFM-T4

e3

62 ns

IKZ50N65ES5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

366 ns

4

FLANGE MOUNT

SILICON

650 V

TIN

SINGLE

R-PSFM-T4

TO-247

e3

60 ns

IRGP20B60PDHR

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

138 ns

3

FLANGE MOUNT

SILICON

600 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

HIGH RELIABILITY, LOW CONDUCTION LOSS

TO-247AC

e0

25 ns

IRGP30B120KD-EP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

35 ns

THROUGH-HOLE

RECTANGULAR

1

75 ns

270 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

-55 Cel

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

Not Qualified

TO-247AD

e3

75 ns

IRGR2B60KDTRPBF

Infineon Technologies

N-CHANNEL

YES

35 W

6.3 A

25 ns

75 ns

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6 V

1

ISL9V5045S3ST-F085C

Onsemi

Matte Tin (Sn) - annealed

1

e3

IXBX50N360HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

660 W

125 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

1880 ns

3

IN-LINE

150 Cel

SILICON

3600 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247

889 ns

IXGA30N120B3

Littelfuse

N-CHANNEL

SINGLE

YES

300 W

60 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

GULL WING

RECTANGULAR

1

380 ns

331 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

580 ns

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

53 ns

IXGT10N170A

Littelfuse

N-CHANNEL

SINGLE

YES

10 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

240 ns

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268

e3

10

260

107 ns

IXYH8N250CV1HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

29 A

PLASTIC/EPOXY

POWER CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

328 ns

3

FLANGE MOUNT

175 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

24 ns

NGTB35N60FL2WG

Onsemi

N-CHANNEL

YES

300 W

70 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

Matte Tin (Sn) - annealed

e3

SEMIX101GD126HDS

Semikron International

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

130 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

555 ns

20

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN/SILVER

UPPER

R-XUFM-X20

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

265 ns

SK100GD066T

Semikron International

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

105 A

UNSPECIFIED

POWER CONTROL

1.85 V

PIN/PEG

RECTANGULAR

6

1131 ns

22

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-P22

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

272 ns

UL RECOGNIZED

SK25GH12T4

Semikron International

35 A

2.1 V

1

Insulated Gate BIP Transistors

175 Cel

1200 V

20 V

NOT SPECIFIED

NOT SPECIFIED

SKM100GAL123D

Semikron International

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

100 A

UNSPECIFIED

POWER CONTROL

3 V

UNSPECIFIED

RECTANGULAR

1

520 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN/SILVER

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

100 ns

UL RECOGNIZED

STGD10NC60HDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

62 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

247 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252AA

e3

30

260

19 ns

STGE50NC60VD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

90 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

1

247 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

61 ns

STGW50HF60S

STMicroelectronics

N-CHANNEL

SINGLE

NO

284 W

110 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

950 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.7 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

TO-247

e3

69 ns

STGW80H65DFB

STMicroelectronics

N-CHANNEL

NO

469 W

120 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

NOT SPECIFIED

NOT SPECIFIED

STGW80H65DFB-4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

470 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

448 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

e3

104 ns

STGYA75H120DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

750 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

406 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

e3

95 ns

WAB300M12BM3

Wolfspeed

CM2400HCB-34N

Mitsubishi Electric

N-CHANNEL

COMPLEX

NO

15600 W

2400 A

UNSPECIFIED

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

3

3600 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

2100 ns

F3L200R12W2H3B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

480 ns

32

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

UL APPROVED

FF300R12KT3EHOSA1

Infineon Technologies

N-CHANNEL

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE

NO

480 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

680 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

215 ns

UL RECOGNIZED

FS75R07N2E4_B11

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

320 ns

13

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

45 ns

FS75R12KT3GBOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

100 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

610 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

HGT1S20N60C3S9A

Onsemi

N-CHANNEL

SINGLE

YES

164 W

45 A

PLASTIC/EPOXY

MOTOR CONTROL

28 ns

1.8 V

GULL WING

RECTANGULAR

1

210 ns

388 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

60 ns

-55 Cel

20 V

660 ns

6.3 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

30

260

52 ns

HGTG20N60C3R

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

45 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

388 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247

52 ns

IRGS4B60KD1PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

63 W

11 A

PLASTIC/EPOXY

MOTOR CONTROL

23 ns

GULL WING

RECTANGULAR

1

89 ns

199 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

40 ns

MIEB101H1200EH

Littelfuse

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

630 W

183 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

4

700 ns

14

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-PUFM-X14

ISOLATED

175 ns

UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.