Insulated Gate Bipolar Transistors (IGBT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
SGL160N60UFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	160 A	PLASTIC/EPOXY	MOTOR CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	262 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	450 ns	6.5 V		SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS	TO-264				150 ns
BIDNW30N60H3	Bourns
FGH80N60FD2	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		201 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AB				74 ns
FGL40N150D	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	40 A	PLASTIC/EPOXY	POWER CONTROL	700 ns		THROUGH-HOLE	RECTANGULAR	1	300 ns	300 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1500 V		25 V		7.5 V	TIN LEAD	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING	TO-264AA	e0			450 ns
FGP20N60UFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		155 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V						SINGLE	R-PSFM-T3			Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	29 ns
FGP30N6S2D	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	45 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	100 ns	163 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			28 ns
GT15J321	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	15 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	150 ns	340 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V				SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH SPEED					170 ns
GT15Q101	Toshiba	N-CHANNEL	SINGLE	NO	150 W	15 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	THROUGH-HOLE	RECTANGULAR	1	500 ns		3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	1200 V		20 V		6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED		e0
GT20D101	Toshiba	N-CHANNEL	SINGLE	NO	180 W	20 A	PLASTIC/EPOXY	POWER AMPLIFIER		3 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors	180 W	150 Cel	SILICON	250 V		20 V		3.2 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified			e0
GT30J121(Q)	Toshiba
GT40WR21,Q	Toshiba
GT50N322A	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		700 ns	3	FLANGE MOUNT			150 Cel	SILICON	1000 V						SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified						330 ns
GT60M301	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	60 A	PLASTIC/EPOXY	POWER CONTROL	600 ns	3.4 V	THROUGH-HOLE	RECTANGULAR	1	400 ns		3	FLANGE MOUNT	Insulated Gate BIP Transistors	200 W	150 Cel	SILICON	900 V		25 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED
GT80J101	Toshiba	N-CHANNEL	SINGLE	NO	150 W	80 A	PLASTIC/EPOXY	POWER CONTROL	600 ns	3.5 V	THROUGH-HOLE	RECTANGULAR	1	400 ns		3	FLANGE MOUNT	Insulated Gate BIP Transistors	200 W	150 Cel	SILICON	600 V		20 V		6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED		e0
IXA20IF1200HB	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	165 W	38 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		350 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V	-40 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD		NOT SPECIFIED	NOT SPECIFIED	110 ns	IEC-60747
IXA30PG1200DHGLB	Littelfuse
IXA40RG1200DHGLB	Littelfuse
IXBF20N300	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	34 A	PLASTIC/EPOXY	POWER CONTROL		3.2 V	THROUGH-HOLE	RECTANGULAR	1		695 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	3000 V	-55 Cel	20 V		5 V	Tin/Silver/Copper (Sn/Ag/Cu)	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified			e1	NOT SPECIFIED	NOT SPECIFIED	608 ns
IXBH10N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.8 V	THROUGH-HOLE	RECTANGULAR	1		1950 ns	3	FLANGE MOUNT			150 Cel	SILICON	3000 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				376 ns
IXBT20N360HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	430 W	70 A	PLASTIC/EPOXY	POWER CONTROL		3.4 V	GULL WING	RECTANGULAR	1		1285 ns	2	SMALL OUTLINE			150 Cel	SILICON	3600 V	-55 Cel	20 V		5 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-268AA				922 ns
IXBT2N250	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	32 W	5 A	PLASTIC/EPOXY	POWER CONTROL		3.8 V	GULL WING	RECTANGULAR	1		252 ns	2	SMALL OUTLINE			150 Cel	SILICON	2500 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	310 ns
IXBT42N170A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	357 W	42 A	PLASTIC/EPOXY	POWER CONTROL		6 V	GULL WING	RECTANGULAR	1		308 ns	2	SMALL OUTLINE			150 Cel	SILICON	1700 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	33 ns
IXBT6N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	12 A	PLASTIC/EPOXY	POWER CONTROL		3.4 V	GULL WING	RECTANGULAR	1		700 ns	2	SMALL OUTLINE			150 Cel	SILICON	1700 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	104 ns
IXDR30N120D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		570 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		6.5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY		e1	10	260	170 ns
IXGA20N120	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	GULL WING	RECTANGULAR	1	700 ns	780 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V	-55 Cel	20 V	1500 ns	5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	10	260	48 ns
IXGF32N170	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	44 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	500 ns	920 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1700 V		20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified			e1			90 ns
IXGH16N60B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		280 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5.5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e1			43 ns
IXGH20N120A3	Littelfuse	N-CHANNEL	SINGLE	NO	180 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		1530 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	66 ns
IXGH25N160	Littelfuse	N-CHANNEL	SINGLE	NO		75 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1		526 ns	3	FLANGE MOUNT			150 Cel	SILICON	1600 V					MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	283 ns
IXGH30N60BD1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	190 ns	200 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD		NOT SPECIFIED	NOT SPECIFIED	25 ns
IXGH32N60AU1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL		2.9 V	THROUGH-HOLE	RECTANGULAR	1	175 ns	400 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	200 W	150 Cel	SILICON	600 V		20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD		NOT SPECIFIED	NOT SPECIFIED	60 ns
IXGH36N60B3C1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	75 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1	160 ns	225 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	360 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	46 ns
IXGH36N60B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	36 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1	160 ns	225 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	360 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	43 ns
IXGH39N60B	IXYS Corporation	N-CHANNEL	SINGLE	NO	200 W	76 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	360 ns	710 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD		NOT SPECIFIED	NOT SPECIFIED	55 ns
IXGH40N60B2	IXYS Corporation	N-CHANNEL	SINGLE	NO		75 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		390 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V						SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD		NOT SPECIFIED	NOT SPECIFIED	38 ns
IXGH50N60A	IXYS Corporation	N-CHANNEL	SINGLE	NO	250 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	200 ns	880 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	250 W	150 Cel	SILICON	600 V		20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e1			290 ns
IXGK400N30A3	Littelfuse	N-CHANNEL	SINGLE	NO	1000 W	400 A	PLASTIC/EPOXY	POWER CONTROL		1.15 V	THROUGH-HOLE	RECTANGULAR	1		555 ns	3	FLANGE MOUNT			150 Cel	SILICON	300 V	-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR			TO-264AA	e1	10	260	100 ns
IXGM40N60A	IXYS Corporation	N-CHANNEL	SINGLE	NO	250 W	75 A	METAL	POWER CONTROL		3 V	PIN/PEG	ROUND	1		900 ns	2	FLANGE MOUNT	Insulated Gate BIP Transistors	250 W	150 Cel	SILICON	600 V		20 V		5 V		BOTTOM	O-MBFM-P2		COLLECTOR	Not Qualified	HIGH SPEED	TO-204AE		NOT SPECIFIED	NOT SPECIFIED	300 ns
IXGN200N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	300 A	PLASTIC/EPOXY	POWER CONTROL		1.5 V	UNSPECIFIED	RECTANGULAR	1	300 ns	493 ns	4	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	750 ns	5 V	NICKEL	UPPER	R-PUFM-X4		ISOLATED							127 ns	UL RECOGNIZED
IXGP16N60C2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		190 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5.5 V	PURE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB				43 ns
IXGR32N170AH1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		26 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		370 ns	3	FLANGE MOUNT			150 Cel	SILICON	1700 V					TIN SILVER COPPER	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e1			107 ns	UL RECOGNIZED
IXGR32N60CD1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	45 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		210 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	FAST		e1			50 ns
IXGT10N170	Littelfuse	N-CHANNEL	SINGLE	YES	110 W	20 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		630 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	300 ns
IXGT16N170	Littelfuse	N-CHANNEL	SINGLE	NO	190 W	32 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	1100 ns	1600 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3	1	COLLECTOR	Not Qualified		TO-247AD	e3	10	260	90 ns
IXGT25N250-T/R	IXYS Corporation
IXSH24N60AU1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	48 A	PLASTIC/EPOXY	MOTOR CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	500 ns	925 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	600 V		20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247		NOT SPECIFIED	NOT SPECIFIED	300 ns
IXSH45N120	IXYS Corporation	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		1650 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	300 W	150 Cel	SILICON	1200 V		20 V				SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD		NOT SPECIFIED	NOT SPECIFIED	330 ns
IXSK35N120AU1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	70 A	PLASTIC/EPOXY	MOTOR CONTROL		4 V	THROUGH-HOLE	RECTANGULAR	1		1100 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	300 W	150 Cel	SILICON	1200 V		20 V		8 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-264		NOT SPECIFIED	NOT SPECIFIED	230 ns

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.