Insulated Gate Bipolar Transistors (IGBT)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IKP20N60T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

166 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

299 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

36 ns

IKW30N60T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

187 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

382 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SWITCHING SPEED

TO-247AC

e3

50 ns

IKW75N65EH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

232 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

61 ns

IRG4PH50KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

45 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

700 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

139 ns

IRGB14C40LPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

4000 ns

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

370 V

12 V

2.2 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW SATURATION VOLTAGE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

3700 ns

IRGP4062DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

THROUGH-HOLE

RECTANGULAR

1

41 ns

164 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

64 ns

IRGP4066DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

454 W

140 A

PLASTIC/EPOXY

POWER CONTROL

90 ns

THROUGH-HOLE

RECTANGULAR

1

80 ns

310 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

120 ns

IRGP4750DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

273 W

70 A

PLASTIC/EPOXY

POWER CONTROL

50 ns

2 V

THROUGH-HOLE

RECTANGULAR

1

40 ns

125 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

120 ns

-40 Cel

20 V

160 ns

7.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

80 ns

ISL9V5036S3ST

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

200 W

46 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

13600 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

420 V

12 V

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

30

260

2800 ns

IXBH32N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

80 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

795 ns

3

FLANGE MOUNT

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

573 ns

IXGA30N120B3-TRL

IXYS Corporation

N-CHANNEL

SINGLE

YES

300 W

60 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

GULL WING

RECTANGULAR

1

380 ns

331 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

580 ns

5 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

53 ns

IXGH48N60B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

48 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

246 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

400 ns

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

47 ns

IXYA20N120B4HV

Littelfuse

N-CHANNEL

SINGLE

YES

375 W

76 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

440 ns

2

SMALL OUTLINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

48 ns

NGTB50N65FL2WG

Onsemi

N-CHANNEL

NO

417 W

100 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

6.5 V

MATTE TIN

e3

NGTG25N120FL2WG

Onsemi

N-CHANNEL

SINGLE

NO

385 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

178 ns

NVG800A75L4DSC

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE

YES

800 A

UNSPECIFIED

POWER CONTROL

1.55 V

UNSPECIFIED

RECTANGULAR

2

855 ns

15

MICROELECTRONIC ASSEMBLY

175 Cel

SILICON

750 V

-40 Cel

20 V

6.2 V

UNSPECIFIED

R-XXMA-X15

347 ns

RJH60F7BDPQ-A0#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

328.9 W

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

216 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

144 ns

SGD02N120

Infineon Technologies

N-CHANNEL

SINGLE

YES

42 W

6.2 A

PLASTIC/EPOXY

POWER CONTROL

24 ns

GULL WING

RECTANGULAR

1

61 ns

375 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

3

COLLECTOR

Not Qualified

TO-252AA

e3

260

40 ns

SGW30N60FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

391 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

78 ns

SIGC54T60R3EX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

175 Cel

SILICON

600 V

UPPER

R-XUUC-N10

NOT SPECIFIED

NOT SPECIFIED

SKM300GB12V

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

443 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

2

11

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

-40 Cel

20 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

SKM400GB066D

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

500 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

2

613 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

TIN/SILVER

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

260 ns

UL RECOGNIZED

SKM400GB12V

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

598 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

2

11

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

STGB6NC60HDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

56 W

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

222 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

MATTE TIN

SINGLE

R-PSSO-G2

Not Qualified

e3

30

245

17.3 ns

STGF10NC60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

9 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

242 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

23 ns

STGP10H60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

115 W

20 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

214 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

26.8 ns

STGP10NC60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

242 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

23 ns

STGP19NC60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

35 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

270 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

38 ns

STGP20H65DFB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

147 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

178 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

26 ns

STGP20NC60V

STMicroelectronics

N-CHANNEL

SINGLE

NO

200 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

42.5 ns

STGW20NC60V

STMicroelectronics

N-CHANNEL

SINGLE

NO

200 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

e3

42.5 ns

STGW40H65DFB

STMicroelectronics

N-CHANNEL

NO

283 W

80 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

NOT SPECIFIED

NOT SPECIFIED

STGW60H65FB

STMicroelectronics

N-CHANNEL

SINGLE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

230 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

104 ns

STGW75H65DFB2-4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

357 W

115 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

231 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

42 ns

STGWA25H120DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

339 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

41 ns

STGWA40H120DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

468 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

351 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

56 ns

STGWT60H65DFB

STMicroelectronics

N-CHANNEL

NO

375 W

80 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

NOT SPECIFIED

NOT SPECIFIED

STGYA120M65DF2AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

351 ns

3

IN-LINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSIP-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

110 ns

AEC-Q101

TIG065E8-TL-H

Onsemi

TIN BISMUTH

1

e6

30

260

SGF5N150UFTU

Onsemi

N-CHANNEL

SINGLE

NO

62.5 W

10 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

120 ns

100 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1500 V

20 V

4 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

e3

25 ns

PCGA200T65NF8

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

1.9 V

NO LEAD

SQUARE

1

332 ns

3

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

S-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

300 ns

AEC-Q101

HGT1S11N120CNS

Onsemi

N-CHANNEL

SINGLE

YES

298 W

43 A

PLASTIC/EPOXY

POWER CONTROL

16 ns

2.4 V

GULL WING

RECTANGULAR

1

400 ns

550 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

40 ns

-55 Cel

20 V

680 ns

SINGLE

R-PSSO-G2

COLLECTOR

AVALANCHE RATED, LOW CONDUCTION LOSS

TO-263AB

33 ns

AFGB30T65SQDN-BW

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

220 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

78.7 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263

e3

30

260

33.6 ns

AEC-Q101

TIG067SS-TL-2W

Onsemi

MATTE TIN

1

e3

30

260

NXH80T120L3Q0P3G

Onsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

188 W

75 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

4

750 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

98 ns

MGW12N120

Onsemi

N-CHANNEL

SINGLE

NO

125 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

695 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRAFAST, HIGH SPEED

TO-247AE

e0

153 ns

NXH75M65L4Q1SG

Onsemi

N-CHANNEL

COMPLEX

NO

83 W

59 A

UNSPECIFIED

POWER CONTROL

2.22 V

UNSPECIFIED

RECTANGULAR

6

146 ns

27

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

5.2 V

UPPER

R-XUFM-X27

ISOLATED

72 ns

SGF80N60UF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

80 A

PLASTIC/EPOXY

MOTOR CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

310 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

450 ns

6.5 V

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

85 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.