Insulated Gate Bipolar Transistors (IGBT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
NXH300B100H4Q2F2PG	Onsemi	N-CHANNEL	COMPLEX	NO	194 W	73 A	UNSPECIFIED	POWER CONTROL		2.25 V	UNSPECIFIED	RECTANGULAR	6		326 ns	59	FLANGE MOUNT		175 Cel	SILICON	1000 V	-40 Cel	20 V		5.9 V		UPPER	R-XUFM-X59		ISOLATED							110.42 ns
NGB8202NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	POWER CONTROL	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V		15 V		2.1 V	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3		260	6500 ns
MGP15N43CLT4	Onsemi	N-CHANNEL		YES	136 W	15 A												Insulated Gate BIP Transistors	175 Cel		400 V				2.1 V
FGH30S150P	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		1080 ns	3	FLANGE MOUNT		175 Cel	SILICON	1500 V	-55 Cel				MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB	e3			372 ns
FGAF30S65AQ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	60 A	PLASTIC/EPOXY	SWITCHING		2.1 V	THROUGH-HOLE	RECTANGULAR	1		166 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6.6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3						e3	NOT SPECIFIED	NOT SPECIFIED	30 ns
NXH40T120L2Q1PTG	Onsemi	N-CHANNEL	COMPLEX	NO		40 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	12			44	FLANGE MOUNT		150 Cel	SILICON	1200 V	-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X44		ISOLATED					NOT SPECIFIED	NOT SPECIFIED
MGP15N35CLG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO		15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			THROUGH-HOLE	RECTANGULAR	1		20500 ns	3	FLANGE MOUNT			SILICON	380 V						SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	VOLTAGE CLAMPING	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	6000 ns
NXH80B120H2Q0SNGQ0BOOST	Onsemi	N-CHANNEL	COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	103 W	41 A	METAL	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	2		299 ns	22	FLANGE MOUNT		125 Cel	SILICON	1200 V	-40 Cel	20 V		6.4 V		UPPER	R-MUFM-X22		ISOLATED							47 ns
NXH80T120L3Q0S3G	Onsemi	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	188 W	75 A	UNSPECIFIED	POWER CONTROL		2.4 V	UNSPECIFIED	RECTANGULAR	4		750 ns	20	FLANGE MOUNT		150 Cel	SILICON	1200 V	-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X20		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	98 ns
NGP15N41CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	107 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		THROUGH-HOLE	RECTANGULAR	1	15000 ns	15500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V		15 V		2.1 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e0		235	5700 ns
MGP14N60E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	18 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		420 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-220AB	e0		235	62 ns
NGTD21T65F2WP	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		1.9 V	NO LEAD	SQUARE	1			3	UNCASED CHIP		175 Cel	SILICON	650 V	-55 Cel	20 V		6.5 V		UPPER	S-XUUC-N3							NOT SPECIFIED	NOT SPECIFIED
SGH40N60UF	Onsemi	N-CHANNEL	SINGLE	NO	160 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	254 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	450 ns	6.5 V		SINGLE	R-PSFM-T3									67 ns
FGY160T65SPD-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	882 W	240 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	THROUGH-HOLE	RECTANGULAR	1		308 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6.3 V		SINGLE	R-PSFM-T3					TO-247		NOT SPECIFIED	NOT SPECIFIED	288 ns
NXH450N65L4Q2F2PG	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	633 W	280 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	2		978 ns	36	FLANGE MOUNT		125 Cel	SILICON	650 V	-40 Cel	20 V		5.2 V		UPPER	R-XUFM-X36		ISOLATED							192 ns
NGB8245NT4G	Onsemi	N-CHANNEL		YES	150 W	20 A			6000 ns					11000 ns				Insulated Gate BIP Transistors	175 Cel		490 V		15 V		2.3 V	MATTE TIN								e3
FGHL75T65LQDTL4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	469 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.35 V	THROUGH-HOLE	RECTANGULAR	1		660 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T4					TO-247	e3			60 ns
AFGY160T65SPDA	Onsemi
NXH80B120L2Q0SGQ0BOOST	Onsemi
FGH30N60LSDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	480 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	2000 ns	2870 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		7 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	62 ns
AFGB40T65SPD-BW	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	267 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	GULL WING	RECTANGULAR	1		51 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	-55 Cel	20 V		7.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-263AB	e3	30	260	49 ns	AEC-Q101
NVG500A75L4DSF2	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES		500 A	UNSPECIFIED	POWER CONTROL		1.45 V	UNSPECIFIED	RECTANGULAR	2		913 ns	13	MICROELECTRONIC ASSEMBLY		175 Cel	SILICON	750 V	-40 Cel	20 V		6.5 V		UNSPECIFIED	R-XXMA-X13									235 ns	AEC-Q101
MGS13002D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1 W	.5 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	ROUND	1		301 ns	3	CYLINDRICAL	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		15 V		6 V	TIN LEAD	BOTTOM	O-PBCY-T3			Not Qualified	HIGH SPEED	TO-226AE	e0
HGTD7N60C3S9A	Onsemi	N-CHANNEL	SINGLE	YES	60 W	14 A	PLASTIC/EPOXY	POWER CONTROL		2 V	GULL WING	RECTANGULAR	1	275 ns	490 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-40 Cel	20 V	675 ns	6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	RC-IGBT	TO-252AA	e3	30	260	20 ns
NGTD13T65F2SWK	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	MOTOR CONTROL		2.2 V	NO LEAD	SQUARE	1			3	UNCASED CHIP		175 Cel	SILICON	650 V	-55 Cel	20 V		6.5 V		UPPER	S-XUUC-N3
NXH100B120H3Q0PGQ0BOOST	Onsemi
MGB15N40CLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES		15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			GULL WING	RECTANGULAR	1		20500 ns	2	SMALL OUTLINE		175 Cel	SILICON	440 V						SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	VOLTAGE CLAMPING			NOT SPECIFIED	NOT SPECIFIED	6000 ns
FGHL40T65MQDT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	238 W	60 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		113 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			40 ns
HGTP12N60A4	Onsemi	N-CHANNEL	SINGLE	NO	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	95 ns	180 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	265 ns			SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				33 ns
NGB8202ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	POWER CONTROL	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V		15 V		2.1 V	MATTE TIN	SINGLE	R-PSSO-G2		COLLECTOR				e3			6500 ns
PCGA300T65DF8	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	MOTOR CONTROL		1.55 V	NO LEAD	SQUARE	1		638 ns	9	UNCASED CHIP		175 Cel	SILICON	650 V	-40 Cel	20 V		6.6 V		UPPER	S-XUUC-N9							NOT SPECIFIED	NOT SPECIFIED	225 ns	AEC-Q101
TIG056BF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W		PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		410 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	400 V		20 V		5 V	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				78 ns
MGP19N35CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	165 W	19 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	6000 ns		THROUGH-HOLE	RECTANGULAR	1	22000 ns	25000 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	380 V		22 V		2 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e0		235	6500 ns
HGT1S7N60A4DS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1	85 ns	205 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V	235 ns	7 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS	TO-263AB		NOT SPECIFIED	NOT SPECIFIED	17 ns
FGHL40S65UQ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	231 W	80 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		1.7 V	THROUGH-HOLE	RECTANGULAR	1		340 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			58 ns
FGHL75T65MQDT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	375 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		184 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3					TO-247	e3			70 ns
FGA50N100BNTTU	Onsemi	N-CHANNEL	SINGLE	NO	156 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.9 V	THROUGH-HOLE	RECTANGULAR	1	100 ns	308 ns	3	FLANGE MOUNT		150 Cel	SILICON	1000 V	-55 Cel	25 V		7 V		SINGLE	R-PSFM-T3							NOT SPECIFIED	NOT SPECIFIED	102 ns
FGB7N60UNDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1	89 ns	146.8 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		8.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	30	260	10.3 ns
NGB8206ANSL3G	Onsemi	N-CHANNEL		YES	150 W	20 A			8000 ns					14000 ns				Insulated Gate BIP Transistors	175 Cel		390 V		15 V		2.1 V	MATTE TIN								e3
MGB19N35CLT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	165 W	19 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	6000 ns		GULL WING	RECTANGULAR	1	22000 ns	25000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	380 V		22 V		2 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	6500 ns
SGH40N60UFTU	Onsemi	N-CHANNEL	SINGLE	NO	160 W	40 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	280 ns	254 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING		e3			67 ns
AFGY120T65SPD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	882 W	160 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6.3 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247		NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
FGAF40N60UFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	40 A	PLASTIC/EPOXY	MOTOR CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	190 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	450 ns	6.5 V		SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS					67 ns
NXH40T120L3Q1SG	Onsemi	N-CHANNEL	COMPLEX	NO	146 W	42 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	12		305 ns	44	FLANGE MOUNT		150 Cel	SILICON	1200 V	-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X44		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	83 ns
FGA40S65SH	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY			1.81 V	THROUGH-HOLE	RECTANGULAR	1		233.2 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS		e3			106.4 ns
NGB8206NTF4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES		20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			GULL WING	RECTANGULAR	1		18500 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V					TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3			6500 ns
FGHL50T65LQDTL4	Onsemi
SGR6N60UF	Onsemi	N-CHANNEL	SINGLE	YES	30 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL		2.6 V	GULL WING	RECTANGULAR	1	150 ns	202 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V	280 ns	6.5 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS, HIGH SPEED SWITCHING					54 ns

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.