Insulated Gate Bipolar Transistors (IGBT)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FGH20N60UFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

165 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

64 ns

119 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

30 ns

MGW14N60ED

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

112 W

18 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

418 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

TO-247AE

e0

62 ns

FGA40T65SHDF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.81 V

THROUGH-HOLE

RECTANGULAR

1

126 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

e3

49 ns

NGB8206NSL3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

18500 ns

2

SMALL OUTLINE

SILICON

390 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

6500 ns

PCGA3040G2F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

41 A

UNSPECIFIED

AUTOMOTIVE IGNITION

1.25 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

400 V

-55 Cel

10 V

2.2 V

UPPER

R-XUUC-N2

AEC-Q101

MGP4N60ED

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

62.5 W

6 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

396 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING, ULTRA FAST SOFT RECOVERY

TO-220AB

e0

65 ns

NGTD13T65F2WP

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

2.2 V

NO LEAD

SQUARE

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

UPPER

S-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

NGD8201ANT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

POWER CONTROL

8000 ns

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

400 V

15 V

2.1 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

6500 ns

NGD8201NT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

115 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

14000 ns

GULL WING

RECTANGULAR

1

7000 ns

18500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

15 V

2.3 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

235

6500 ns

HGTP7N60C3

Onsemi

N-CHANNEL

SINGLE

NO

60 W

14 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

275 ns

490 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

675 ns

6 V

SINGLE

R-PSFM-T3

COLLECTOR

RC-IGBT

TO-220AB

20 ns

SNXH80T120L2Q0P2G

Onsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

158 W

67 A

UNSPECIFIED

POWER CONTROL

2.85 V

UNSPECIFIED

RECTANGULAR

4

293 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

88 ns

NXH350N100H4Q2F2PG

Onsemi

N-CHANNEL

2 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

NO

592 W

329 A

UNSPECIFIED

POWER CONTROL

1.8 V

UNSPECIFIED

RECTANGULAR

2

572.5 ns

42

FLANGE MOUNT

125 Cel

SILICON

1000 V

-40 Cel

20 V

5.7 V

UPPER

R-XUFM-X42

ISOLATED

114 ns

FGB3040CS

Onsemi

N-CHANNEL

SINGLE

YES

150 W

21 A

PLASTIC/EPOXY

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

7300 ns

6

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

430 V

12 V

2.2 V

MATTE TIN

SINGLE

R-PSSO-G6

1

Not Qualified

e3

30

260

2100 ns

FGHL75T65LQDT

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

469 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

696 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

88 ns

NXH25T120L2Q1PTG

Onsemi

N-CHANNEL

COMPLEX

YES

81 W

25 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

12

551 ns

44

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X44

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

77 ns

NGB8206N

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

8000 ns

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

390 V

15 V

2.1 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

235

6500 ns

SNXH75M65L3F2STG

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

NO

236 W

75 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

2.2 V

PIN/PEG

RECTANGULAR

1

432 ns

32

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

25 V

6.8 V

UPPER

R-PUFM-P32

ISOLATED

LOW SWITCHING LOSSES

129 ns

NFVA33065L42

Onsemi

Matte Tin (Sn) - annealed

e3

NXH300B100H4Q2F2SG

Onsemi

N-CHANNEL

COMPLEX

NO

194 W

73 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

326 ns

59

FLANGE MOUNT

175 Cel

SILICON

1000 V

-40 Cel

20 V

5.9 V

UPPER

R-XUFM-X59

ISOLATED

110.42 ns

HGT1S12N60A4DS

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

167 W

54 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

GULL WING

RECTANGULAR

1

95 ns

180 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

265 ns

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

30

260

33 ns

TIG058E8

Onsemi

N-CHANNEL

YES

Insulated Gate BIP Transistors

150 Cel

400 V

8 V

.9 V

HGT1S7N60A4DS9A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

34 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

GULL WING

RECTANGULAR

1

85 ns

205 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

235 ns

7 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

17 ns

MGB15N35CLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

20500 ns

2

SMALL OUTLINE

SILICON

380 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

NOT SPECIFIED

NOT SPECIFIED

6000 ns

FGY100T65SCDT

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

750 W

200 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

1.9 V

THROUGH-HOLE

RECTANGULAR

1

410 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

25 V

6.9 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

FAST SWITCHING

TO-247

e3

240 ns

PCGLA200T75NF8

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

1.75 V

NO LEAD

SQUARE

1

528 ns

UNCASED CHIP

175 Cel

SILICON

750 V

-40 Cel

20 V

6.7 V

UNSPECIFIED

S-XXUC-N

NOT SPECIFIED

NOT SPECIFIED

488 ns

AEC-Q101

NXH35C120L2C2ESG

Onsemi

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

6

485 ns

26

IN-LINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.8 V

DUAL

R-XDIP-T26

240 ns

MGP15N35CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

136 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

20500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

380 V

22 V

2.1 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

TO-220AB

e0

235

6000 ns

NVG600A75L4DSE2

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

600 A

UNSPECIFIED

POWER CONTROL

1.35 V

UNSPECIFIED

RECTANGULAR

2

1092 ns

15

MICROELECTRONIC ASSEMBLY

175 Cel

SILICON

750 V

-40 Cel

20 V

6.5 V

UNSPECIFIED

R-XXMA-X15

265 ns

AEC-Q101

MGP15N43CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

136 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

21000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

460 V

17 V

2.1 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

5000 ns

FGB3056-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

29 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

2400 ns

1.55 V

GULL WING

RECTANGULAR

1

1800 ns

6200 ns

2

SMALL OUTLINE

175 Cel

SILICON

560 V

3700 ns

-40 Cel

10000 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

30

260

1560 ns

NGB15N41ACLT4G

Onsemi

N-CHANNEL

YES

107 W

15 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

440 V

15 V

1.9 V

MATTE TIN

e3

NGD8205NT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

8000 ns

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

390 V

15 V

2.1 V

TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e3

260

6500 ns

FGHL50T65MQDT

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

144 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

51 ns

NXH200T120H3Q2F2STNG

Onsemi

FGA50S110P

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

492 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1100 V

25 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

e3

370 ns

NGTD28T65F2SWK

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

2 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

SGH10N60RUFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

16 A

PLASTIC/EPOXY

MOTOR CONTROL

2.8 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

284 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

410 ns

8.5 V

SINGLE

R-PSFM-T3

49 ns

NGD18N40CLBT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

115 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

430 V

18 V

1.9 V

TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e3

260

5200 ns

MGP11N60E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

96 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

442 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRAFAST, HIGH SPEED

TO-220AB

e0

68 ns

MGB15N43CLT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

21000 ns

2

SMALL OUTLINE

SILICON

460 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

5000 ns

FGPF4536

Onsemi

N-CHANNEL

SINGLE

NO

28.4 W

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

292 ns

3

FLANGE MOUNT

150 Cel

SILICON

360 V

-55 Cel

30 V

4 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

25.6 ns

PCFG50T65SQF

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.1 V

NO LEAD

SQUARE

1

2

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

S-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

NXH25T120L2Q1PG

Onsemi

N-CHANNEL

COMPLEX

YES

81 W

25 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

12

551 ns

44

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X44

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

77 ns

FGHL40T65MQD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

238 W

80 A

PLASTIC/EPOXY

POWER AMPLIFIER

1.8 V

THROUGH-HOLE

RECTANGULAR

1

203 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

e3

52 ns

PCFG25T120SQF

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.95 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

NXH80T120L2Q0S2TG

Onsemi

N-CHANNEL

COMPLEX

NO

158 W

67 A

UNSPECIFIED

POWER CONTROL

2.85 V

UNSPECIFIED

RECTANGULAR

4

293 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

RC-IGBT

NOT SPECIFIED

NOT SPECIFIED

88 ns

MGP20N14CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

135 V

10 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOGIC LEVEL

TO-220AB

e0

MGW20N120

Onsemi

N-CHANNEL

SINGLE

NO

174 W

28 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

710 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-247AE

e0

190 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.