PCGA3040G2F by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	PCGA3040G2F
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 41 A; Maximum Gate-Emitter Voltage: 10 V;
Datasheet	PCGA3040G2F Datasheet
In Stock	598

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	41 A
Configuration:	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	AUTOMOTIVE IGNITION
Maximum Gate-Emitter Threshold Voltage:	2.2 V
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	2
Maximum Power Dissipation (Abs):	150 W
Maximum Collector-Emitter Voltage:	400 V
Terminal Position:	UPPER
Package Style (Meter):	UNCASED CHIP
JESD-30 Code:	R-XUUC-N2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Maximum Operating Temperature:	175 Cel
Maximum Gate-Emitter Voltage:	10 V
Reference Standard:	AEC-Q101
Maximum VCEsat:	1.25 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
598	-	-

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