Insulated Gate Bipolar Transistors (IGBT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
TIG062E8-TL-H	Onsemi	N-CHANNEL		YES														Insulated Gate BIP Transistors	150 Cel		400 V			6 V		.9 V	Tin/Bismuth (Sn/Bi)			1					e6
FGH60N60UFDTU-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	298 W	120 A	PLASTIC/EPOXY	POWER CONTROL		2.9 V	THROUGH-HOLE	RECTANGULAR	1	80 ns	218 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		RC-IGBT	TO-247AB	e3			83 ns	AEC-Q101
NGD15N41CLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	107 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	15500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			15 V		2.1 V	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3		260	5700 ns
FGB5N60UNDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	73.5 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1	202 ns	151.6 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	30	260	7.5 ns
FGP5N60LS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	10 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING			THROUGH-HOLE	RECTANGULAR	1		187 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		4.5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			5.9 ns
TIG111BF	Onsemi	N-CHANNEL	SINGLE	NO	60 W	23 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		360 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			30 V		6 V	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				250 ns
NXH100B120H3Q0SG	Onsemi	N-CHANNEL	COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	186 W	50 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	2		291 ns	22	FLANGE MOUNT		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X22		ISOLATED		RC-IGBT					61 ns
FGH25N120FTDS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	313 W	50 A	PLASTIC/EPOXY	POWER CONTROL	53 ns		THROUGH-HOLE	RECTANGULAR	1	132 ns	299 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			25 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AB	e3			63 ns
HGTP7N60C3DR	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		14 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		490 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V							SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB				20 ns
MGP15N38CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	350 V			17 V		2.1 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOGIC LEVEL	TO-220AB	e0
FGHL75T65LQD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.35 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247		NOT SPECIFIED	NOT SPECIFIED
FGL35N120FTDTU	Onsemi	N-CHANNEL		NO	368 W	70 A												Insulated Gate BIP Transistors	150 Cel		1200 V			25 V		7.5 V	MATTE TIN								e3
NXH40T120L2Q1SG	Onsemi	N-CHANNEL	COMPLEX	NO		40 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	12			44	FLANGE MOUNT		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X44		ISOLATED					NOT SPECIFIED	NOT SPECIFIED
NXH40T120L3Q1PG	Onsemi	N-CHANNEL	COMPLEX	NO	146 W	42 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	12		305 ns	44	FLANGE MOUNT		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X44		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	83 ns
NGB8206NG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	390 V			15 V		2.1 V	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3		260	6500 ns
TIG110GMH	Onsemi	N-CHANNEL		NO	60 W	36 A												Insulated Gate BIP Transistors	150 Cel		600 V			30 V		6 V
NGB8204NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	115 W	18 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	13000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	430 V			18 V		1.9 V	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3		260	5200 ns
MGP15N60U	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	96 W	26 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		7 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e0
FGH75T65SHD_F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		150 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		100 ns	3	FLANGE MOUNT			SILICON	650 V						Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3					TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	84.8 ns
TIG062E8	Onsemi	N-CHANNEL		YES														Insulated Gate BIP Transistors	150 Cel		400 V			6 V		.9 V
HGT1S12N60C3DS9A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	24 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	GULL WING	RECTANGULAR	1	275 ns	480 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-40 Cel	20 V	675 ns	6 V		SINGLE	R-PSSO-G2		COLLECTOR		RC-IGBT	TO-263AB				48 ns
NXH240B120H3Q1SG	Onsemi
SNXH100M65L4Q2F2P2G	Onsemi	N-CHANNEL	COMPLEX	NO	339 W	263 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	8		3780 ns	40	FLANGE MOUNT		150 Cel	SILICON	650 V		-40 Cel	20 V		6.5 V	Matte Tin (Sn) - annealed	UPPER	R-XUFM-X40		ISOLATED				e3			357 ns
MGP7N60ED	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	81 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		415 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED SWITCHING, ULTRA FAST SOFT RECOVERY	TO-220AB	e0			55 ns
NGB8207ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		20 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		14700 ns	2	SMALL OUTLINE		175 Cel	SILICON	365 V						MATTE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3			2450 ns
NXH100B120H3Q0STG	Onsemi	N-CHANNEL	COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	186 W	50 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	2		291 ns	22	FLANGE MOUNT		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V	Matte Tin (Sn) - annealed	UPPER	R-XUFM-X22		ISOLATED		RC-IGBT		e3			61 ns
FGD2736G3-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.65 V	GULL WING	RECTANGULAR	1	15000 ns	6300 ns	2	SMALL OUTLINE		175 Cel	SILICON	360 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA	e3	30	260	3900 ns
SNXH160B120L2Q0PG	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	167 W	75 A	UNSPECIFIED	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2		359 ns	20	FLANGE MOUNT		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X20		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	80 ns
MGP21N60E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	31 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		558 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-220AB	e0			90 ns
HGTP11N120CN	Onsemi	N-CHANNEL	SINGLE	NO	298 W	43 A	PLASTIC/EPOXY	MOTOR CONTROL	16 ns	2.4 V	THROUGH-HOLE	RECTANGULAR	1	400 ns	550 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	42 ns	-55 Cel	20 V	680 ns			SINGLE	R-PSFM-T3		COLLECTOR		AVALANCHE RATED	TO-220AB				33 ns
FGH75N60SFTU	Onsemi	N-CHANNEL	SINGLE	NO		150 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		159 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AB	e3			87 ns
NGD18N45CLBT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	115 W	18 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	9000 ns		GULL WING	RECTANGULAR	1	7000 ns	5400 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	500 V			18 V		1.9 V	MATTE TIN	SINGLE	R-PSSO-G2	3	COLLECTOR				e3	30	260	2920 ns
NXH35C120L2C2S1G	Onsemi	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO		35 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	6		485 ns	26	IN-LINE		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.8 V		DUAL	R-PDIP-T26		ISOLATED							240 ns
FGHL40T65LQD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	238 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.3 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3					TO-247		NOT SPECIFIED	NOT SPECIFIED
NGD18N40ACLBT4G	Onsemi	N-CHANNEL		YES	115 W	15 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		430 V			18 V		2.1 V	MATTE TIN			1					e3	30	260
NGP15N41CLG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	107 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		THROUGH-HOLE	RECTANGULAR	1	15000 ns	15500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			15 V		2.1 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3		260	5700 ns
NXH400N100H4Q2F2SG	Onsemi	N-CHANNEL	COMPLEX	NO	959 W	409 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	4		619 ns	42	FLANGE MOUNT		175 Cel	SILICON	1000 V		-40 Cel	20 V		6.1 V		UPPER	R-XUFM-X42		ISOLATED							186 ns
MGP11N60ED	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	96 W	15 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		442 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	ULTRAFAST, HIGH SPEED	TO-220AB	e0			68 ns
FGH30N120FTD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		575 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V							SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AB		NOT SPECIFIED	NOT SPECIFIED	167 ns
NGD8205ANT4G	Onsemi	N-CHANNEL		YES	125 W	20 A			8000 ns					14000 ns				Insulated Gate BIP Transistors	175 Cel		390 V			15 V		2.1 V	MATTE TIN			1					e3	30	260
NGTD21T65F2SWK	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		1.9 V	NO LEAD	SQUARE	1			3	UNCASED CHIP		175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V		UPPER	S-XUUC-N3							NOT SPECIFIED	NOT SPECIFIED
NXH80T120L2Q0S1G	Onsemi	N-CHANNEL	COMPLEX	NO	125 W	57 A	UNSPECIFIED	POWER CONTROL		2.85 V	UNSPECIFIED	RECTANGULAR	4		320 ns	18	FLANGE MOUNT		125 Cel	SILICON	1200 V		-40 Cel	20 V		6.4 V		UPPER	R-XUFM-X18		ISOLATED		RC-IGBT					55 ns
HGT1S3N60A4DS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	17 A	PLASTIC/EPOXY	POWER CONTROL	15 ns	2.7 V	GULL WING	RECTANGULAR	1	100 ns	180 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	23 ns	-55 Cel	20 V	265 ns	7 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				17.5 ns
NGD8201BNT4G	Onsemi	N-CHANNEL		YES	115 W	15 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		430 V			18 V		1.8 V	Matte Tin (Sn) - annealed			1					e3	30	260
TIG056BF-1E	Onsemi	N-CHANNEL		NO	30 W													Insulated Gate BIP Transistors	150 Cel		430 V			33 V		5 V	MATTE TIN								e3
FGHL50T65LQDT	Onsemi
FGY60T120SQDN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	517 W	120 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		1.95 V	THROUGH-HOLE	RECTANGULAR	1		468 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	25 V		6.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR		HIGH SPEED SWITCHING	TO-247	e3	NOT SPECIFIED	NOT SPECIFIED	112 ns
ENGAFGHL50T65SQDC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	467 W	88.7 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1		100.5 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V				SINGLE	R-PSFM-T3		COLLECTOR			TO-247				36.76 ns

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.