Insulated Gate Bipolar Transistors (IGBT)

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
NGB8206NTF4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES		20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			GULL WING	RECTANGULAR	1		18500 ns	2	SMALL OUTLINE			SILICON	390 V						Tin/Lead (Sn80Pb20)	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0			6500 ns
HGT1S7N60A4S9A	Onsemi	N-CHANNEL	SINGLE	YES	125 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1	85 ns	205 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-55 Cel	20 V	235 ns	7 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				17 ns
MGC15N40CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES		15 A	UNSPECIFIED	AUTOMOTIVE IGNITION			NO LEAD	UNSPECIFIED	1		19000 ns		UNCASED CHIP		175 Cel	SILICON	440 V						TIN LEAD	UPPER	X-XUUC-N			Not Qualified	VOLTAGE CLAMPING		e0			6000 ns
MGY25N120	Onsemi	N-CHANNEL	SINGLE	NO	212 W	38 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		876 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3			Not Qualified	HIGH SPEED	TO-264AA	e0			214 ns
SGF80N60UFTU	Onsemi	N-CHANNEL	SINGLE	NO		80 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		310 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING		e3			85 ns
FGH75T65SQDT_F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	375 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		135 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS	TO-247	e3	NOT SPECIFIED	NOT SPECIFIED	45 ns
HGTP20N60A4	Onsemi	N-CHANNEL	SINGLE	NO		70 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS		e3			28 ns
SNXH160B120L2Q0PG-N	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	167 W	75 A	UNSPECIFIED	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2		359 ns	20	FLANGE MOUNT		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X20		ISOLATED							80 ns
NXH80B120L2Q0SG	Onsemi	N-CHANNEL	COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	YES	103 W	41 A	UNSPECIFIED	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	2		290 ns	22	FLANGE MOUNT		125 Cel	SILICON	1200 V		-40 Cel	20 V		6.4 V		UPPER	R-XUFM-X22		ISOLATED		RC-IGBT					47 ns
FGH30T65UPDT-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		170 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	650 V			20 V		7.5 V	TIN	SINGLE	R-PSFM-T3	1	COLLECTOR			TO-247AB	e3			52 ns
TIG064E8	Onsemi	N-CHANNEL		YES														Insulated Gate BIP Transistors	150 Cel		400 V			4 V		.9 V
PCFG75T65MQF	Onsemi	N-CHANNEL		YES		150 A	UNSPECIFIED	POWER CONTROL		1.9 V	NO LEAD	RECTANGULAR	1				UNCASED CHIP		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V		UPPER	R-XUUC-N							NOT SPECIFIED	NOT SPECIFIED
NXH350N100H4Q2F2P1G	Onsemi
NXH80T120L2Q0SG	Onsemi				146 W	65 A				2.8 V			1					Insulated Gate BIP Transistors	150 Cel		1200 V			20 V
FGPF70N33BTTU	Onsemi	N-CHANNEL	SINGLE	NO	48 W	70 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		316 ns	3	FLANGE MOUNT		150 Cel	SILICON	330 V		-55 Cel	30 V		4.3 V		SINGLE	R-PSFM-T3		ISOLATED		LOW CONDUCTION LOSS	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	41 ns
NGB8206NT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	390 V			15 V		2.3 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	VOLTAGE CLAMPING		e0		235	6500 ns
FGAF40S65AQ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	94 W	80 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		2.1 V	THROUGH-HOLE	RECTANGULAR	1		90.8 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		ISOLATED				e3	NOT SPECIFIED	NOT SPECIFIED	30.3 ns
SGF5N150UF	Onsemi	N-CHANNEL	SINGLE	NO	62.5 W	10 A	PLASTIC/EPOXY	POWER CONTROL		5.5 V	THROUGH-HOLE	RECTANGULAR	1	120 ns	100 ns	3	FLANGE MOUNT		150 Cel	SILICON	1500 V		-55 Cel	20 V	170 ns	4 V		SINGLE	R-PSFM-T3									25 ns
FGA6540WDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	238 W	80 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		2.3 V	THROUGH-HOLE	RECTANGULAR	1		70.4 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.6 V	MATTE TIN	SINGLE	R-PSFM-T3						e3			51.2 ns
NGTD13T120F2WP	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2.4 V	NO LEAD	RECTANGULAR	1			2	UNCASED CHIP		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		UPPER	R-XUUC-N2							NOT SPECIFIED	NOT SPECIFIED
HGTP12N60A4D9A	Onsemi
NXH25C120L2C2SG	Onsemi	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	7		320 ns	26	IN-LINE		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.8 V		DUAL	R-PDIP-T26		ISOLATED							128 ns
MGB15N35CLT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	136 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			GULL WING	RECTANGULAR	1		20500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	380 V			22 V		2.1 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	VOLTAGE CLAMPING		e0		235	6000 ns
SGF23N60UFTU	Onsemi	N-CHANNEL	SINGLE	NO	30 W	23 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	250 ns	320 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING		e3			55 ns
FGA40T65SHD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		85.6 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS		e3	NOT SPECIFIED	NOT SPECIFIED	51.2 ns
FGAF20N60SMD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	40 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	27 ns	109 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V			20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED				e3			31 ns
FGPF50N33BT	Onsemi	N-CHANNEL	SINGLE	NO			PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		365 ns	3	FLANGE MOUNT		150 Cel	SILICON	330 V							SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB				46 ns
NXH80T120L2Q0PG	Onsemi				146 W	65 A				2.8 V			1					Insulated Gate BIP Transistors	150 Cel		1200 V			20 V												NOT SPECIFIED	NOT SPECIFIED
MGP20N35CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	320 V			15 V		2.4 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e0
NXH100B120H3Q0PTG	Onsemi	N-CHANNEL	COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	186 W	50 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	2		291 ns	22	FLANGE MOUNT		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X22		ISOLATED		RC-IGBT			NOT SPECIFIED	NOT SPECIFIED	61 ns
FGH20N60SFDTU_F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	165 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.8 V	THROUGH-HOLE	RECTANGULAR	1	48 ns	145 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB	e3			29 ns	AEC-Q101
HGTD3N60A4S	Onsemi	N-CHANNEL	SINGLE	YES	70 W	17 A	PLASTIC/EPOXY	POWER CONTROL	15 ns	2.7 V	GULL WING	RECTANGULAR	1	100 ns	180 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	23 ns	-55 Cel	20 V	265 ns	7 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS	TO-252AA				17.5 ns
HGTD7N60C3S	Onsemi	N-CHANNEL	SINGLE	YES	60 W	14 A	PLASTIC/EPOXY	POWER CONTROL		2 V	GULL WING	RECTANGULAR	1	275 ns	490 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-40 Cel	20 V	675 ns	6 V		SINGLE	R-PSSO-G2		COLLECTOR		RC-IGBT	TO-252AA				20 ns
FGP3040G2-F085	Onsemi	N-CHANNEL		NO	150 W	41 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		390 V			12 V		2.2 V	Matte Tin (Sn) - annealed								e3	NOT SPECIFIED	NOT SPECIFIED
SGH30N60RUFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		48 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		341 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING		e3			101 ns
NXH100T120L3Q0S1NG	Onsemi	N-CHANNEL	COMPLEX	NO	328 W	100 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	4		412 ns	20	FLANGE MOUNT		175 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X20									93 ns
FGH75T65SQD_F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	375 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		149 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3				RC-IGBT	TO-247	e3	NOT SPECIFIED	NOT SPECIFIED	48 ns
FGA6560WDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	306 W	120 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		99 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.6 V	MATTE TIN	SINGLE	R-PSFM-T3						e3			85.6 ns
NGB8207NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	165 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	2700 ns		GULL WING	RECTANGULAR	1	15000 ns	14700 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	365 V			15 V		2 V	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3		260	2450 ns
FGB40N60SM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	349 W	80 A	PLASTIC/EPOXY	POWER CONTROL	28 ns		GULL WING	RECTANGULAR	1	17 ns	132 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V			20 V		6 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	30	260	37 ns
TIG111GMH	Onsemi	N-CHANNEL		NO	55 W	32 A												Insulated Gate BIP Transistors	150 Cel		600 V			30 V		6 V
FGH50N3	Onsemi	N-CHANNEL	SINGLE	NO	463 W	75 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		162 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V			20 V		5.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247	e3	NOT SPECIFIED	NOT SPECIFIED	32 ns
FGA4060ADF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	238 W	80 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		2.3 V	THROUGH-HOLE	RECTANGULAR	1		70.4 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V		-55 Cel	20 V		7.6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		FAST SWITCHING		e3			51.2 ns
HGT5A27N120BN	Onsemi	N-CHANNEL	SINGLE	NO	500 W	72 A	PLASTIC/EPOXY	MOTOR CONTROL	25 ns	4.2 V	THROUGH-HOLE	RECTANGULAR	1	200 ns	360 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	53 ns	-55 Cel	20 V	480 ns			SINGLE	R-PSFM-T3		COLLECTOR		AVALANCHE RATED	TO-247				42 ns
TIG030TS	Onsemi	N-CHANNEL		YES														Insulated Gate BIP Transistors	150 Cel		400 V			6 V
NXH100B120H3Q0SGQ0BOOST	Onsemi
SNXH100M65L4Q2F2P2G-N1	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	NO	339 W	263 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	8		3780 ns	40	FLANGE MOUNT		150 Cel	SILICON	650 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X40		ISOLATED							357 ns
SGH15N60RUFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	160 W	24 A	PLASTIC/EPOXY	MOTOR CONTROL		2.8 V	THROUGH-HOLE	RECTANGULAR	1	200 ns	260 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	265 ns	8.5 V		SINGLE	R-PSFM-T3									54 ns

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.