Insulated Gate Bipolar Transistors (IGBT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
FGPF50N30TTU	Onsemi	N-CHANNEL	SINGLE	NO			PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		423 ns	3	FLANGE MOUNT		150 Cel	SILICON	300 V						MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			108 ns
NGTD30T120F2WP	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	MOTOR CONTROL		2.4 V	NO LEAD	RECTANGULAR	1			2	UNCASED CHIP		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		UPPER	R-XUUC-N2							NOT SPECIFIED	NOT SPECIFIED
NXH75M65L4Q1PTG	Onsemi	N-CHANNEL	COMPLEX	NO	83 W	59 A	UNSPECIFIED	POWER CONTROL		2.22 V	UNSPECIFIED	RECTANGULAR	6		146 ns	27	FLANGE MOUNT		150 Cel	SILICON	650 V		-40 Cel	20 V		5.2 V	MATTE TIN	UPPER	R-XUFM-X27		ISOLATED				e3			72 ns
SGS23N60UFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	73 W	23 A	PLASTIC/EPOXY	POWER CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1	150 ns	130 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	280 ns	6.5 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				44 ns
NGB8204NT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	115 W	18 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	13000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	430 V			18 V		1.9 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	5200 ns
NVG450A120L5DSC	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES		450 A	UNSPECIFIED	POWER CONTROL		1.6 V	UNSPECIFIED	RECTANGULAR	2		1173 ns	15	MICROELECTRONIC ASSEMBLY		150 Cel	SILICON	1200 V		-40 Cel	20 V		7.6 V	Matte Tin (Sn) - annealed	UNSPECIFIED	R-XXMA-X15						e3			187 ns
NXH400N100H4Q2F2PG	Onsemi	N-CHANNEL	COMPLEX	NO	959 W	409 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	4		619 ns	42	FLANGE MOUNT		175 Cel	SILICON	1000 V		-40 Cel	20 V		6.1 V		UPPER	R-XUFM-X42		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	186 ns
HGTP7N60A4D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	85 ns	205 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	235 ns	7 V		SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	17 ns
AFGY160T65SPDB	Onsemi
MGP15N40CLG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	150 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	6000 ns		THROUGH-HOLE	RECTANGULAR	1	20000 ns	20500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			22 V		2.1 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	VOLTAGE CLAMPING	TO-220AB	e3		260	6000 ns
NXH450N65L4Q2F2S1G	Onsemi	N-CHANNEL	2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	365 W	167 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	4		694 ns	36	FLANGE MOUNT		175 Cel	SILICON	650 V		-40 Cel	20 V		5.2 V		UPPER	R-XUFM-X36		ISOLATED							211 ns
FGY120T65SPD-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	882 W	240 A	PLASTIC/EPOXY	POWER CONTROL		1.85 V	THROUGH-HOLE	RECTANGULAR	1		247 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.2 V		SINGLE	R-PSFM-T3							NOT SPECIFIED	NOT SPECIFIED	187 ns	AEC-Q101
TIG065E8TL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES			PLASTIC/EPOXY				FLAT	RECTANGULAR	1			8	SMALL OUTLINE			SILICON	400 V							DUAL	R-PDSO-F8
MGP15N40CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	136 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			THROUGH-HOLE	RECTANGULAR	1		20500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			22 V		2.1 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	VOLTAGE CLAMPING	TO-220AB	e0		235	6000 ns
FGD2736G3-F085V	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	37.5 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.65 V	GULL WING	RECTANGULAR	1	15000 ns	6300 ns	2	SMALL OUTLINE		175 Cel	SILICON	330 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1					e3	30	260	3900 ns	AEC-Q101
HGT1S12N60C3DS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	24 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	GULL WING	RECTANGULAR	1	275 ns	480 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-40 Cel	20 V	675 ns	6 V		SINGLE	R-PSSO-G2		COLLECTOR		RC-IGBT	TO-263AB				48 ns
NGB8202NT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			15 V		2.1 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	6500 ns
FGL40N120ANTU	Onsemi	N-CHANNEL	SINGLE	NO		64 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		165 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-264AA	e3			45 ns
AFGY160T65SPDC	Onsemi
AFGY160T65SPD-B4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	882 W	240 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.3 V		SINGLE	R-PSFM-T3					TO-247					AEC-Q101
FGH75N60UF	Onsemi	N-CHANNEL	SINGLE	NO		150 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		188 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V							SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AB		NOT SPECIFIED	NOT SPECIFIED	101 ns
FGPF4565	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	30 A	PLASTIC/EPOXY	POWER CONTROL		1.88 V	THROUGH-HOLE	RECTANGULAR	1		242.8 ns	3	FLANGE MOUNT		150 Cel	SILICON	650 V		-55 Cel	25 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3			72 ns
FGA5065ADF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	100 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		2.2 V	THROUGH-HOLE	RECTANGULAR	1		80 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3						e3	NOT SPECIFIED	NOT SPECIFIED	57.6 ns
AFGY160T65SPDD	Onsemi
FGH75T65SQDTL4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	375 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		352 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	MATTE TIN	SINGLE	R-PSFM-T4				RC-IGBT	TO-247	e3			80 ns
PCFG75T65SQF	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2.1 V	NO LEAD	SQUARE	1				UNCASED CHIP		175 Cel	SILICON	650 V		-40 Cel	20 V		6.4 V		UPPER	S-XUUC-N							NOT SPECIFIED	NOT SPECIFIED
NGP15N41ACLG	Onsemi	N-CHANNEL		NO	107 W	15 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		440 V			15 V		1.9 V
AFGB30T65RQDN	Onsemi
MMG05N60D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1 W	.5 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		301 ns	4	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			15 V		6 V	TIN LEAD	DUAL	R-PDSO-G4		COLLECTOR	Not Qualified	HIGH SPEED	TO-261A	e0
HGT1S7N60B3DS9A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	14 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1	175 ns	350 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-55 Cel	20 V	470 ns	6 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				46 ns
NXH200T120H3Q2F2SG	Onsemi	N-CHANNEL	COMPLEX	NO	679 W	256 A	UNSPECIFIED	POWER CONTROL	102 ns	2.3 V	UNSPECIFIED	RECTANGULAR	4	99 ns	1096 ns	56	FLANGE MOUNT		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X56		ISOLATED							373 ns
FGB3245G2-F085C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	23 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.25 V	GULL WING	RECTANGULAR	1	15000 ns	8100 ns	2	SMALL OUTLINE		175 Cel	SILICON	440 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				3500 ns	AEC-Q101
FGA50T65SHD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	319 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		90.6 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3				FAST SWITCHING		e3			57.6 ns
FGAF40N60UF	Onsemi	N-CHANNEL	SINGLE	NO		40 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		190 ns	3	FLANGE MOUNT			SILICON	600 V							SINGLE	R-PSFM-T3		ISOLATED		LOW CONDUCTION LOSS					67 ns
NGB8206NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	390 V			15 V		2.1 V	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	VOLTAGE CLAMPING		e3		260	6500 ns
NGD8209NT4G	Onsemi	N-CHANNEL		YES	94 W	12 A												Insulated Gate BIP Transistors	175 Cel		445 V			15 V		2 V	MATTE TIN			1					e3	30	260
SGF23N60UF	Onsemi	N-CHANNEL	SINGLE	NO	75 W	23 A	PLASTIC/EPOXY	POWER CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	320 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	450 ns	6.5 V		SINGLE	R-PSFM-T3		ISOLATED							55 ns
HGTP3N60A4D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		17 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		180 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			17.5 ns
NGB15N41CLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	107 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	15500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			15 V		2.1 V	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3		260	5700 ns
HGTP20N60C3	Onsemi	N-CHANNEL	SINGLE	NO	164 W	45 A	PLASTIC/EPOXY	MOTOR CONTROL	28 ns	1.8 V	THROUGH-HOLE	RECTANGULAR	1	210 ns	388 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	60 ns	-55 Cel	20 V	660 ns	6.3 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				52 ns
NVH820S75L4SPB	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	NO	1000 W	820 A	UNSPECIFIED	POWER CONTROL		1.55 V	UNSPECIFIED	RECTANGULAR	6		1354 ns	33	FLANGE MOUNT		175 Cel	SILICON	750 V		-40 Cel	20 V		6.6 V	Matte Tin (Sn) - annealed	UPPER	R-XUFM-X33		ISOLATED				e3			454 ns
FGHL40T65LQDT	Onsemi
NGB18N40ACLBT4G	Onsemi	N-CHANNEL		YES	115 W	18 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		430 V			18 V		1.9 V	MATTE TIN								e3
MGY25N120D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	212 W	38 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		876 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3			Not Qualified	ULTRAFAST, HIGH SPEED	TO-264AA	e0			214 ns
NXH160T120L2Q1PG	Onsemi	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR	NO	280 W	140 A	UNSPECIFIED	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	4			30	FLANGE MOUNT		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.9 V		UPPER	R-XUFM-X30		ISOLATED					NOT SPECIFIED	NOT SPECIFIED
NXH450N65L4Q2F2SG	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	633 W	280 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	2		978 ns	40	FLANGE MOUNT		125 Cel	SILICON	650 V		-40 Cel	20 V		5.2 V		UPPER	R-XUFM-X40		ISOLATED							192 ns
TIG066SSTL	Onsemi	N-CHANNEL		YES														Insulated Gate BIP Transistors	150 Cel		400 V			6 V		1 V
FGHL50T65LQD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.3 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	30 V		6 V		SINGLE	R-PSFM-T3					TO-247		NOT SPECIFIED	NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.