Insulated Gate Bipolar Transistors (IGBT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
FGPF4633	Onsemi	N-CHANNEL	SINGLE	NO			PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		394 ns	3	FLANGE MOUNT			SILICON	330 V						SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				40 ns
SGH20N60RUFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		32 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		363 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V					MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING		e3			81 ns
NGTD30T120F2SWK	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	MOTOR CONTROL		2.4 V	NO LEAD	RECTANGULAR	1			2	UNCASED CHIP		175 Cel	SILICON	1200 V	-55 Cel	20 V		6.5 V		UPPER	R-XUUC-N2
MGW21N60ED	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	142 W	31 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		558 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	ULTRAFAST, HIGH SPEED	TO-247AE	e0			90 ns
NVH640S75L4SPB	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	680 W		UNSPECIFIED	POWER CONTROL		1.64 V	UNSPECIFIED	RECTANGULAR	6		956 ns	33	FLANGE MOUNT		175 Cel	SILICON	750 V	-40 Cel	20 V			MATTE TIN	UPPER	R-XUFM-X33		ISOLATED				e3			359 ns
NGB8207BNT4G	Onsemi	N-CHANNEL		YES	165 W	20 A			2700 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		365 V		15 V		2 V	MATTE TIN			1					e3	30	260
MGB15N40CLT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	136 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			GULL WING	RECTANGULAR	1		20500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V		22 V		2.1 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	VOLTAGE CLAMPING		e0	30	235	6000 ns
HGT1S12N60A4DS9A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1	95 ns	180 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V	265 ns			SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				33 ns
NGB18N40CLBT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	115 W	18 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	13000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	430 V		18 V		1.9 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	5200 ns
NVG800A75L4DSC2	Onsemi
NVH950S75L4SPB	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1300 W		UNSPECIFIED	POWER CONTROL		1.55 V	UNSPECIFIED	RECTANGULAR	6		1148 ns	33	FLANGE MOUNT		175 Cel	SILICON	750 V	-40 Cel	20 V				UPPER	R-XUFM-X33		ISOLATED							423 ns
NVH660S75L4SPFB	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	733 W		UNSPECIFIED	POWER CONTROL		1.44 V	UNSPECIFIED	RECTANGULAR	6		1601 ns	33	FLANGE MOUNT		175 Cel	SILICON	750 V	-40 Cel	20 V				UPPER	R-XUFM-X33		ISOLATED							422 ns
NVG800A75L4DSB2	Onsemi
NXH350N100H4Q2F2S1G-R	Onsemi
NVH640S75L4SPC	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	680 W		UNSPECIFIED	POWER CONTROL		1.64 V	UNSPECIFIED	RECTANGULAR	6		956 ns	33	FLANGE MOUNT		175 Cel	SILICON	750 V	-40 Cel	20 V				UPPER	R-XUFM-X33		ISOLATED							359 ns
NXH400N100H4Q2F2SG-R	Onsemi	N-CHANNEL	COMPLEX	NO	959 W	409 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	4		619 ns	42	FLANGE MOUNT		175 Cel	SILICON	1000 V	-40 Cel	20 V		6.1 V		UPPER	R-XUFM-X42		ISOLATED							186 ns
NVH950S75L4SPC	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1325 W		UNSPECIFIED	POWER CONTROL		1.55 V	UNSPECIFIED	RECTANGULAR	6		1148 ns	33	FLANGE MOUNT		175 Cel	SILICON	750 V	-40 Cel	20 V				UPPER	R-XUFM-X33		ISOLATED							423 ns
NXH240B120H3Q1PG-R	Onsemi
NXH100B120H3Q0PG-R	Onsemi
FGD2040G3-F085	Onsemi
NVH680S75L4SPC	Onsemi
NVH660S75L4SPFC	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	733 W		UNSPECIFIED	POWER CONTROL		1.44 V	UNSPECIFIED	RECTANGULAR	6		1601 ns	33	FLANGE MOUNT		175 Cel	SILICON	750 V	-40 Cel	20 V				UPPER	R-XUFM-X33		ISOLATED							422 ns
NXH300B100H4Q2F2SG-R	Onsemi	N-CHANNEL	COMPLEX	NO	194 W	73 A	UNSPECIFIED	POWER CONTROL		2.25 V	UNSPECIFIED	RECTANGULAR	6		326 ns	59	FLANGE MOUNT		175 Cel	SILICON	1000 V	-40 Cel	20 V		5.9 V		UPPER	R-XUFM-X59		ISOLATED							110.42 ns
NVG600A75L4DSB2	Onsemi
NVG500A75L4DSB2	Onsemi
NVG500A75L4DSC2	Onsemi
NXH800A100L4Q2F2P1G	Onsemi	N-CHANNEL	COMPLEX	NO	714 W	309 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	4		1121.94 ns	17	FLANGE MOUNT		175 Cel	SILICON	1000 V	-40 Cel	20 V		6.7 V		UPPER	R-XUFM-X17		ISOLATED							223.8 ns
NXH600N65L4Q2F2PG	Onsemi
NXH800A100L4Q2F2S1G	Onsemi	N-CHANNEL	COMPLEX	NO	714 W	309 A	UNSPECIFIED	POWER CONTROL		2.3 V	PIN/PEG	RECTANGULAR	4		1121.94 ns	17	FLANGE MOUNT		175 Cel	SILICON	1000 V	-40 Cel	20 V		6.7 V		UPPER	R-XUFM-P17		ISOLATED							223.8 ns
NXH600B100H4Q2F2PG	Onsemi
NXH800A100L4Q2F2S2G	Onsemi	N-CHANNEL	COMPLEX	NO	714 W	309 A	UNSPECIFIED	POWER CONTROL		2.3 V	PIN/PEG	RECTANGULAR	4		1121.94 ns	17	FLANGE MOUNT		175 Cel	SILICON	1000 V	-40 Cel	20 V		6.7 V		UPPER	R-XUFM-P17		ISOLATED							223.8 ns
NXH800A100L4Q2F2P2G	Onsemi	N-CHANNEL	COMPLEX	NO	714 W	309 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	4		1121.94 ns	17	FLANGE MOUNT		175 Cel	SILICON	1000 V	-40 Cel	20 V		6.7 V		UPPER	R-XUFM-X17		ISOLATED							223.8 ns
NVG600A75L4DSC2	Onsemi
NXH240B120H3Q1P1G	Onsemi
NXH600N65L4Q2F2SG	Onsemi
NXH600B100H4Q2F2SG	Onsemi
NXH240B120H3Q1S1G	Onsemi
NXH400N100L4Q2F2SG	Onsemi
NXH400N100L4Q2F2PG	Onsemi
NXH600B100H4Q2F2S1G	Onsemi
FGY100T120SWD	Onsemi
SNXH600B100H4Q2F2S1G-S	Onsemi
FGY60T120SWD	Onsemi
FGHL40T120SWD	Onsemi
SGP13N60UFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		13 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		253 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V					MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING	TO-220AB	e3			62 ns
SGP13N60UFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	13 A	PLASTIC/EPOXY	MOTOR CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	253 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	450 ns	6.5 V		SINGLE	R-PSFM-T3					TO-220AB				62 ns
SGP10N60RUFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	16 A	PLASTIC/EPOXY	POWER CONTROL		2.8 V	THROUGH-HOLE	RECTANGULAR	1	350 ns	284 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	410 ns	8.5 V		SINGLE	R-PSFM-T3				RC-IGBT	TO-220AB				49 ns
NGTG30N60FLWG	Onsemi	N-CHANNEL		NO	250 W	60 A												Insulated Gate BIP Transistors	150 Cel		600 V		20 V		6.5 V	Tin (Sn)								e3

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.