Insulated Gate Bipolar Transistors (IGBT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
FGP15N60UNDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	178 W	30 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	12.8 ns	69.8 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8.5 V	MATTE TIN	SINGLE	R-PSFM-T3					TO-220AB	e3			18.8 ns
AFGH50T65SQDN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	100 A	PLASTIC/EPOXY	GENERAL PURPOSE			THROUGH-HOLE	RECTANGULAR	1		110 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V			Tin (Sn)	SINGLE	R-PSFM-T3					TO-247AB	e3			33 ns	AEC-Q101
NGTB25N120FL2WAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	385 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		313 ns	4	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V	TIN	SINGLE	R-PSFM-T4					TO-247	e3			34 ns
FGA15S125P	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	30 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		670 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1250 V			25 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3						e3			331 ns
NGTB40N120IHLWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	260 W	80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		565 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3
NXH50M65L4C2ESG	Onsemi
HGTG12N60A4D9A	Onsemi
AFGHL50T65RQDN	Onsemi																										MATTE TIN			1					e3	30	260
ISL9V5036P3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	250 W	46 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	THROUGH-HOLE	RECTANGULAR	1	15000 ns	13600 ns	3	FLANGE MOUNT		175 Cel	SILICON	420 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	2800 ns	AEC-Q101
NGTB15N60R2FG	Onsemi	N-CHANNEL		NO	54 W	24 A												Insulated Gate BIP Transistors	175 Cel		600 V			20 V		7 V	MATTE TIN								e3
NGTB45N60SWG	Onsemi	N-CHANNEL		NO	250 W	90 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	MATTE TIN								e3
NGTG50N60FLWG	Onsemi	N-CHANNEL		NO	223 W	100 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	Tin (Sn)								e3
FGH40T65SH_F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		85.6 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS	TO-247AB	e3			51.2 ns
FPF2G120BF07AS	Onsemi	N-CHANNEL	SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	156 W	40 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	3		165 ns	32	FLANGE MOUNT		150 Cel	SILICON	650 V		-40 Cel	20 V		6.8 V		UPPER	R-XUFM-X32		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	49 ns
NGTB30N65IHL2WG	Onsemi	N-CHANNEL		NO	300 W	60 A												Insulated Gate BIP Transistors	175 Cel		650 V			20 V		6.5 V	Matte Tin (Sn) - annealed								e3
NGTB40N65FL2WG	Onsemi	N-CHANNEL		NO	366 W	80 A												Insulated Gate BIP Transistors	175 Cel		650 V			20 V		6.5 V	MATTE TIN								e3
NGTB20N120IHSWG	Onsemi	N-CHANNEL		NO	156 W	40 A												Insulated Gate BIP Transistors	150 Cel		1200 V			20 V		6.5 V	TIN								e3
SGP23N60UF	Onsemi	N-CHANNEL	SINGLE	NO	100 W	23 A	PLASTIC/EPOXY	POWER CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	320 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	450 ns	6.5 V		SINGLE	R-PSFM-T3					TO-220AB				55 ns
NGTB30N60L2WG	Onsemi	N-CHANNEL		NO	225 W	100 A												Insulated Gate BIP Transistors	175 Cel		600 V			20 V		6.5 V	MATTE TIN								e3
FGD3050G2	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	32 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.2 V	GULL WING	RECTANGULAR	1	15000 ns	6800 ns	2	SMALL OUTLINE		175 Cel	SILICON	495 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA	e3	30	260	2500 ns
FGD3440G2-F085V	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	166 W	26.9 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7 ns	1.75 V	GULL WING	RECTANGULAR	1	15 ns	7.6 ns	2	SMALL OUTLINE		175 Cel	SILICON	40 V	11 ns	-40 Cel	14 V	26 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252	e3	30	260	3 ns
FGH12040WD-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	428 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.9 V	THROUGH-HOLE	RECTANGULAR	1		630 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	25 V		8 V		SINGLE	R-PSFM-T3					TO-247				116 ns
ISL9V3040S3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	THROUGH-HOLE	RECTANGULAR	1	15000 ns	7600 ns	3	IN-LINE		175 Cel	SILICON	390 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSIP-T3		COLLECTOR			TO-262AA				2800 ns
NGTB20N135IHRWG	Onsemi	N-CHANNEL		NO	394 W	40 A												Insulated Gate BIP Transistors	175 Cel		1350 V			20 V		6.5 V	Matte Tin (Sn) - annealed								e3
ISL9V3036D3STV	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	350 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA	e3	30	260	2800 ns
FGH40T65UQDF_F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	231 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.67 V	THROUGH-HOLE	RECTANGULAR	1		314 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3				RC-IGBT	TO-247	e3			52 ns
NGTB05N60R2DT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	56 W	16 A	PLASTIC/EPOXY	POWER CONTROL		2 V	GULL WING	RECTANGULAR	1		186 ns	2	SMALL OUTLINE		175 Cel	SILICON	600 V			20 V		7 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR				e3	30	260	139 ns
NGTB45N60S1WG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	90 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		223 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V		-55 Cel	20 V		6.5 V	Tin (Sn)	SINGLE	R-PSFM-T3					TO-247AD	e3			108 ns
NGTB40N135IHRWG	Onsemi	N-CHANNEL		NO	394 W	80 A												Insulated Gate BIP Transistors	175 Cel		1350 V			20 V		6.5 V	MATTE TIN								e3
NGTB40N60FLWG	Onsemi	N-CHANNEL		NO	257 W	80 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	Tin (Sn)								e3
FGA20N120FTDTU	Onsemi	N-CHANNEL		NO	298 W	40 A								320 ns				Insulated Gate BIP Transistors	150 Cel		1200 V			25 V		7.5 V	MATTE TIN								e3
AFGHL40T65SQD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	238 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3	NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
NGTB30N120L2WG	Onsemi																										TIN								e3
FGA25S125P-SN00337	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.35 V	THROUGH-HOLE	RECTANGULAR	1		722 ns	3	FLANGE MOUNT		175 Cel	SILICON	1250 V		-55 Cel	25 V		7.5 V		SINGLE	R-PSFM-T3									325.2 ns
NGTG35N65FL2WG	Onsemi	N-CHANNEL	SINGLE	NO		70 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		231 ns	3	FLANGE MOUNT			SILICON	650 V						MATTE TIN	SINGLE	R-PSFM-T3	1	COLLECTOR			TO-247	e3	30	260	108 ns
ISL9V3040S3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				2800 ns
ISL9V3036P3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	THROUGH-HOLE	RECTANGULAR	1	15000 ns	7600 ns	3	FLANGE MOUNT		175 Cel	SILICON	350 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				2800 ns
NGTB30N120IHRWG	Onsemi	N-CHANNEL		NO	384 W	60 A												Insulated Gate BIP Transistors	175 Cel		1200 V			20 V		6.5 V	Tin (Sn)								e3
FGH40T65UPD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL	34 ns		THROUGH-HOLE	RECTANGULAR	1	22 ns	213 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	650 V			20 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB	e3			57 ns
FGH40T65SQD_F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	238 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3
FGD3050G2_F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	32 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.2 V	GULL WING	RECTANGULAR	1	15000 ns	6800 ns	2	SMALL OUTLINE		175 Cel	SILICON	495 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA		NOT SPECIFIED	NOT SPECIFIED	2500 ns
FGB20N60SF	Onsemi	N-CHANNEL	SINGLE	YES	208 W	40 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	48 ns	123 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-263AB	e3	30	260	28 ns
NGTB45N60S2WG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	90 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		232 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V		-55 Cel	20 V		6.5 V	Tin (Sn)	SINGLE	R-PSFM-T3					TO-247AD	e3
NXH50M65L4Q1SG	Onsemi	N-CHANNEL	COMPLEX	NO	86 W	48 A	UNSPECIFIED	POWER CONTROL		2.22 V	UNSPECIFIED	RECTANGULAR	6		130 ns	27	FLANGE MOUNT		150 Cel	SILICON	650 V		-40 Cel	20 V		5.2 V		UPPER	R-XUFM-X27		ISOLATED							39 ns
FGD3325G2-F085V	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	41 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.25 V	GULL WING	RECTANGULAR	1	15000 ns	7300 ns	2	SMALL OUTLINE		175 Cel	SILICON	240 V	11000 ns	-55 Cel	10 V	30000 ns	2.2 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA	e3	30	260	2000 ns	AEC-Q101
NGTB15N135IHRWG	Onsemi	N-CHANNEL		NO	357 W	30 A												Insulated Gate BIP Transistors	175 Cel		1350 V			20 V		6.5 V	Matte Tin (Sn) - annealed								e3
FGH40T65SH-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		85.6 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS	TO-247	e3			51.2 ns
ISL9V2540S3ST-F085C	Onsemi

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.