Insulated Gate Bipolar Transistors (IGBT)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

A2C50S65M2-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

208 W

50 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

7

298 ns

35

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

167 ns

A1P25S12M3

STMicroelectronics

N-CHANNEL

COMPLEX

NO

197 W

25 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

6

326 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

139 ns

STGA25M120DF3

STMicroelectronics

A2C25S12M3

STMicroelectronics

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

197 W

25 A

PLASTIC/EPOXY

MOTOR CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

6

338 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X35

NOT SPECIFIED

NOT SPECIFIED

125.2 ns

UL RECOGNIZED

A2C35S12M3-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

250 W

35 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

7

364 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

145 ns

STGA30M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 A

UNSPECIFIED

POWER CONTROL

2 V

GULL WING

RECTANGULAR

1

225 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

45 ns

A1P50S65M2

STMicroelectronics

N-CHANNEL

COMPLEX

NO

208 W

50 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

331 ns

22

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

167.2 ns

STG10M65F2D7

STMicroelectronics

STGA40H65DFB

STMicroelectronics

TSG25N100DV

STMicroelectronics

300 W

50 A

3.5 V

1

Insulated Gate BIP Transistors

150 Cel

1000 V

20 V

A1P35S12M3

STMicroelectronics

N-CHANNEL

COMPLEX

NO

250 W

35 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

6

398 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

142 ns

STG25M120F3D7

STMicroelectronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2 V

NO LEAD

RECTANGULAR

1

395 ns

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

UPPER

R-XUUC-N2

45 ns

STG30M65F2D7

STMicroelectronics

N-CHANNEL

SINGLE

YES

30 A

UNSPECIFIED

POWER CONTROL

1.9 V

NO LEAD

RECTANGULAR

1

310 ns

2

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

47 ns

STHI07N50

STMicroelectronics

N-CHANNEL

SINGLE

NO

100 W

7 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

7 A

1300 ns

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

500 V

TIN LEAD

7 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

800 ns

TSG25N100DF

STMicroelectronics

300 W

50 A

3.5 V

1

Insulated Gate BIP Transistors

150 Cel

1000 V

20 V

STGSB200M65DF2AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

714 W

216 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

GULL WING

RECTANGULAR

1

412.6 ns

9

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

DUAL

R-PDSO-G9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

193.6 ns

AEC-Q101; UL RECOGNIZED

STHI10N50

STMicroelectronics

N-CHANNEL

SINGLE

NO

100 W

10 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

1300 ns

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

500 V

TIN LEAD

10 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

800 ns

A1P50S65M2-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

208 W

50 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

331 ns

22

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

167.2 ns

STG25H120F2D7

STMicroelectronics

N-CHANNEL

SINGLE

YES

25 A

UNSPECIFIED

POWER CONTROL

2.6 V

NO LEAD

RECTANGULAR

1

236 ns

3

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

UPPER

R-XUUC-N3

40.5 ns

STHI10N50FI

STMicroelectronics

N-CHANNEL

SINGLE

NO

35 W

10 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

1300 ns

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

500 V

TIN LEAD

10 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

800 ns

TSG50N50DF

STMicroelectronics

300 W

50 A

3.3 V

1

Insulated Gate BIP Transistors

150 Cel

500 V

20 V

A2C50S65M2

STMicroelectronics

N-CHANNEL

COMPLEX

NO

208 W

50 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

7

298 ns

35

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

167 ns

STG50M65F2D7

STMicroelectronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.5 V

NO LEAD

RECTANGULAR

1

315 ns

3

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

UPPER

R-XUUC-N3

66 ns

TSG50N50DV

STMicroelectronics

300 W

50 A

3.3 V

1

Insulated Gate BIP Transistors

150 Cel

500 V

20 V

STG8M120F3D7

STMicroelectronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.4 V

NO LEAD

SQUARE

1

356 ns

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

UPPER

S-XUUC-N2

28.8 ns

A1C15S12M3-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

142.8 W

15 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

7

199 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

134.5 ns

STG200M65F2D8AG

STMicroelectronics

N-CHANNEL

SINGLE

YES

200 A

UNSPECIFIED

POWER CONTROL

2.3 V

NO LEAD

RECTANGULAR

1

168 ns

9

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

7 V

UPPER

R-XUUC-N9

205 ns

AEC-Q101

STG50M170F3D7

STMicroelectronics

A2C35S12M3

STMicroelectronics

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

250 W

35 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

6

364 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X35

NOT SPECIFIED

NOT SPECIFIED

170 ns

A1P25S12M3-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

197 W

25 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

6

326 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

139 ns

STHI07N50FI

STMicroelectronics

N-CHANNEL

SINGLE

NO

35 W

7 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

7 A

1300 ns

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

500 V

TIN LEAD

7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

800 ns

STG15M120F3D8

STMicroelectronics

STGO30H60DLLFBAG

STMicroelectronics

STG40H65FB2D7

STMicroelectronics

N-CHANNEL

SINGLE

YES

40 A

UNSPECIFIED

POWER CONTROL

2 V

NO LEAD

RECTANGULAR

1

148.5 ns

2

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

UPPER

R-XUUC-N2

71.8 ns

STG50M120F3D7

STMicroelectronics

STGSH80HB65DAG

STMicroelectronics

GWA40MS120DF4AG

STMicroelectronics

STGFW45HF60W

STMicroelectronics

N-CHANNEL

NO

128 W

50 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

5.75 V

STGD3NC120H-1

STMicroelectronics

N-CHANNEL

SINGLE

NO

105 W

16 A

PLASTIC/EPOXY

POWER CONTROL

2.8 V

THROUGH-HOLE

RECTANGULAR

1

342 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-251

NOT SPECIFIED

NOT SPECIFIED

18.5 ns

STGP20H65FB2

STMicroelectronics

N-CHANNEL

SINGLE

NO

147 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

178 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

26 ns

STGW40NC60W

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

46 ns

STGW30NB60H

STMicroelectronics

N-CHANNEL

SINGLE

NO

190 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

410 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

90 ns

STGW40V60F

STMicroelectronics

N-CHANNEL

SINGLE

NO

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

241 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

73 ns

STGB19NC60HD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

35 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

144 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

MATTE TIN

SINGLE

R-PSSO-G2

1

Not Qualified

e3

24 ns

STGP3NC60HD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

10 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STGF3HF60HD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

18 W

7.5 A

PLASTIC/EPOXY

POWER CONTROL

2.95 V

THROUGH-HOLE

RECTANGULAR

1

140 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.75 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

15 ns

STGB8NC60K

STMicroelectronics

N-CHANNEL

SINGLE

YES

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

242 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

MATTE TIN

DUAL

R-PDSO-G2

1

Not Qualified

e3

23 ns

STGY40NC60VD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

247 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn)

SINGLE

R-PSIP-T3

1

Not Qualified

e3

61 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.