Insulated Gate Bipolar Transistors (IGBT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
NXH200T120H3Q2F2STG	Onsemi
FGA30N65SMD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		125 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	650 V			20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3						e3			41 ns
NXH80B120L2Q0SNG	Onsemi	N-CHANNEL	COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	YES	103 W	41 A	UNSPECIFIED	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	2		290 ns	22	FLANGE MOUNT		125 Cel	SILICON	1200 V		-40 Cel	20 V		6.4 V	MATTE TIN	UPPER	R-XUFM-X22		ISOLATED		RC-IGBT		e3			47 ns
NGTD20T120F2SWK	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2.4 V	NO LEAD	RECTANGULAR	1			2	UNCASED CHIP		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		UPPER	R-XUUC-N2							NOT SPECIFIED	NOT SPECIFIED
SNXH150B120H3Q2F2PG-R	Onsemi	N-CHANNEL	SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	279 W	80 A	UNSPECIFIED	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	3		239 ns	35	FLANGE MOUNT		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X35		ISOLATED		RC-IGBT					64 ns
HGT1S12N60A4S9A	Onsemi	N-CHANNEL	SINGLE	YES	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1	95 ns	180 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-55 Cel	20 V	265 ns			SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				33 ns
PCGA200T65NF8M1	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	MOTOR CONTROL		1.9 V	NO LEAD	SQUARE	1		332 ns	3	UNCASED CHIP		175 Cel	SILICON	650 V		-40 Cel	20 V		6.5 V		UPPER	S-XUUC-N3							NOT SPECIFIED	NOT SPECIFIED	300 ns
NGP8203NG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO		20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			THROUGH-HOLE	RECTANGULAR	1		18500 ns	3	FLANGE MOUNT		175 Cel	SILICON	440 V							SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	6500 ns
FGH75T65SQDNL4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	375 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		467 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		5.6 V	MATTE TIN	SINGLE	R-PSFM-T4					TO-247	e3			113 ns
MGP4N60E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		396 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-220AB	e0			65 ns
NGTD23T120F2WP	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2.2 V	NO LEAD	RECTANGULAR	1			2	UNCASED CHIP		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		UPPER	R-XUUC-N2							NOT SPECIFIED	NOT SPECIFIED
MGS05N60D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1 W	.5 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	ROUND	1		301 ns	3	CYLINDRICAL	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V	TIN LEAD	BOTTOM	O-PBCY-T3			Not Qualified	HIGH SPEED SWITCHING	TO-226AE	e0
FGH75T65SHDT-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	455 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		109 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247		NOT SPECIFIED	NOT SPECIFIED	89 ns
TIG058E8-TL-H	Onsemi																										TIN BISMUTH			1					e6	30	260
FGA50N100BNTD2	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	100 ns	308 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1000 V			25 V		7 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified			e3			102 ns
NGB8206NSL3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES		20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			GULL WING	RECTANGULAR	1		18500 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V						MATTE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3			6500 ns
HGTP12N60A4D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	95 ns	180 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	265 ns		MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3			33 ns
MGY20N120D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	174 W	28 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		710 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V					8 V	TIN LEAD	SINGLE	R-PSFM-T3			Not Qualified	HIGH SPEED SWITCHING, ULTRA FAST SOFT RECOVERY	TO-264AA	e0			190 ns
TIG052TS	Onsemi	N-CHANNEL		YES														Insulated Gate BIP Transistors	150 Cel		400 V			8 V		1 V
FGAF40N60UFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		190 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e3			67 ns
MMG05N60DT3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1 W	.5 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		301 ns	4	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			15 V		6 V	TIN LEAD	DUAL	R-PDSO-G4		COLLECTOR	Not Qualified	HIGH SPEED	TO-261A	e0
AFGY120T65SPD-B4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	882 W	240 A	PLASTIC/EPOXY	POWER CONTROL		1.85 V	THROUGH-HOLE	RECTANGULAR	1		247 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.2 V		SINGLE	R-PSFM-T3				RC-IGBT	TO-247				183 ns	AEC-Q101
FGA70N33BTDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	149 W	220 A	UNSPECIFIED	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		244 ns	3	FLANGE MOUNT		150 Cel	SILICON	330 V		-55 Cel	30 V		4.3 V		SINGLE	R-XSFM-T3							NOT SPECIFIED	NOT SPECIFIED	39 ns
FGHL50T65MQD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3
NGTD28T65F2WP	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	MOTOR CONTROL		2 V	NO LEAD	RECTANGULAR	1			3	UNCASED CHIP		175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V		UPPER	R-XUUC-N3							NOT SPECIFIED	NOT SPECIFIED
SGH30N60RUFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	235 W	48 A	PLASTIC/EPOXY	MOTOR CONTROL		2.8 V	THROUGH-HOLE	RECTANGULAR	1	400 ns	341 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	490 ns	8.5 V		SINGLE	R-PSFM-T3									101 ns
NVG800A75L4DSB	Onsemi
FGH30T65UPD_F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	60 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		170 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.5 V		SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AB		NOT SPECIFIED	NOT SPECIFIED	52 ns
FGB3236-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	187 W	44 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	7040 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	350 V			12 V		2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	260	2350 ns
FGA50N100BNTD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			THROUGH-HOLE	RECTANGULAR	1		760 ns	3	FLANGE MOUNT		150 Cel	SILICON	1000 V							SINGLE	R-PSFM-T3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED	460 ns
NGTD14T65F2WP	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2 V	NO LEAD	SQUARE	1			3	UNCASED CHIP		175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V		UPPER	S-XUUC-N3							NOT SPECIFIED	NOT SPECIFIED
NXH80B120H2Q0SGQ0BOOST	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	YES	103 W	41 A	UNSPECIFIED	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	2		299 ns	22	FLANGE MOUNT		125 Cel	SILICON	1200 V		-40 Cel	20 V		6.4 V		UPPER	R-XUFM-X22		ISOLATED							47 ns
FGH20N60UFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	165 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	64 ns	155 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AB	e3			29 ns
FGH75T65UPD-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	375 W	150 A	PLASTIC/EPOXY	POWER CONTROL	56 ns	2.3 V	THROUGH-HOLE	RECTANGULAR	1	33 ns	197 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	98 ns	-55 Cel	20 V	249 ns	7.5 V		SINGLE	R-PSFM-T3				RC-IGBT	TO-247				87 ns
TIG066SS	Onsemi	N-CHANNEL		YES														Insulated Gate BIP Transistors	150 Cel		400 V			6 V		1 V
PCFG75T120SQF	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	SWITCHING		1.95 V	NO LEAD	SQUARE	1			3	UNCASED CHIP		150 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		UPPER	S-XUUC-N3		EMITTER					NOT SPECIFIED	NOT SPECIFIED
NXH80B120H2Q0SNG	Onsemi																										Matte Tin (Sn) - annealed								e3
FGPF4633TU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO			PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		394 ns	3	FLANGE MOUNT		150 Cel	SILICON	330 V						TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			40 ns
FGA6530WDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	176 W	60 A	PLASTIC/EPOXY	SWITCHING		2.3 V	THROUGH-HOLE	RECTANGULAR	1		59.2 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.6 V	MATTE TIN	SINGLE	R-PSFM-T3						e3			40 ns
HGT1S7N60B3DS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	14 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1	175 ns	350 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-55 Cel	20 V	470 ns	6 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				46 ns
SGH40N60UFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		40 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		254 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING		e3			67 ns
FGA30N120FTDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	339 W	60 A	UNSPECIFIED	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		575 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			25 V		7.5 V	MATTE TIN	SINGLE	R-XSFM-T3			Not Qualified			e3			167 ns
NGD15N41CLT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	107 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	15500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			15 V		2.1 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	5700 ns
FGA30N60LSDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	480 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	2000 ns	2870 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		7 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified			e3			62 ns
NCG225L75NF8M1	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	MOTOR CONTROL		1.75 V	NO LEAD	SQUARE	1		424 ns	2	UNCASED CHIP		175 Cel	SILICON	750 V		-40 Cel	20 V		7.2 V		UPPER	S-XUUC-N2									468 ns	AEC-Q101
FGA90N33ATTU	Onsemi	N-CHANNEL	SINGLE	NO	223 W	330 A	UNSPECIFIED	POWER CONTROL		1.4 V	THROUGH-HOLE	RECTANGULAR	1	240 ns	280 ns	3	FLANGE MOUNT		150 Cel	SILICON	330 V		-55 Cel	30 V		5.5 V		SINGLE	R-XSFM-T3							NOT SPECIFIED	NOT SPECIFIED	63 ns
NXH240B120H3Q1PG	Onsemi	N-CHANNEL	COMPLEX	NO	158 W	68 A	UNSPECIFIED	MOTOR CONTROL		2 V	UNSPECIFIED	RECTANGULAR	3		337 ns	32	FLANGE MOUNT		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V	Matte Tin (Sn) - annealed	UPPER	R-XUFM-X32		ISOLATED				e3	NOT SPECIFIED	NOT SPECIFIED	54 ns
TIG074E8-TL-H	Onsemi																										TIN BISMUTH			1					e6	30	260

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.