NXH80B120H2Q0SGQ0BOOST by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NXH80B120H2Q0SGQ0BOOST
Description	N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 103 W; Maximum Collector Current (IC): 41 A; Case Connection: ISOLATED;
Datasheet	NXH80B120H2Q0SGQ0BOOST Datasheet
In Stock	757

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	41 A
Configuration:	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.4 V
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-40 Cel
Nominal Turn Off Time (toff):	299 ns
No. of Terminals:	22
Maximum Power Dissipation (Abs):	103 W
Maximum Collector-Emitter Voltage:	1200 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	47 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X22
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	125 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Maximum VCEsat:	2.5 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
757	-	-

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;

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TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 7.5 ohm; Minimum DS Breakdown Voltage: 60 V;