Insulated Gate Bipolar Transistors (IGBT)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IXSN55N120A

IXYS Corporation

N-CHANNEL

SINGLE

NO

80 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

600 ns

4

FLANGE MOUNT

SILICON

1200 V

NICKEL

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

140 ns

IXXH100N60C3

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

190 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

95 ns

IXXH75N60B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

750 W

160 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

108 ns

IXXK200N65B4

Littelfuse

N-CHANNEL

SINGLE

NO

1630 W

480 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

135 ns

IXXN340N65B4

Littelfuse

N-CHANNEL

SINGLE

NO

1500 W

520 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

UNSPECIFIED

RECTANGULAR

1

346 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

UPPER

R-PUFM-X4

ISOLATED

LOW CONDUCTION LOSS

119 ns

UL RECOGNIZED

IXYH16N170CV1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

310 W

40 A

PLASTIC/EPOXY

POWER CONTROL

3.8 V

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

175 Cel

SILICON

1700 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

35 ns

IXYH30N170C

Littelfuse

N-CHANNEL

SINGLE

NO

937 W

100 A

PLASTIC/EPOXY

POWER CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

327 ns

3

FLANGE MOUNT

175 Cel

SILICON

1700 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

49 ns

IXYH50N65C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

132 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

145 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

56 ns

IXYH75N65C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

750 W

170 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

166 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

83 ns

IXYH8N250CHV

Littelfuse

N-CHANNEL

SINGLE

NO

280 W

29 A

PLASTIC/EPOXY

POWER CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

328 ns

3

FLANGE MOUNT

175 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

24 ns

IXYK100N65B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

830 W

225 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

358 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

65 ns

IXYK110N120B4

Littelfuse

N-CHANNEL

SINGLE

NO

1360 W

340 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

520 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

95 ns

IXYK140N90C3

Littelfuse

N-CHANNEL

SINGLE

NO

1630 W

310 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

300 ns

3

FLANGE MOUNT

175 Cel

SILICON

900 V

-55 Cel

20 V

5.5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

122 ns

IXYN100N65A3

Littelfuse

N-CHANNEL

SINGLE

NO

600 W

170 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

UNSPECIFIED

RECTANGULAR

1

360 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

UPPER

R-PUFM-X4

ISOLATED

LOW CONDUCTION LOSS

68 ns

UL RECOGNIZED

IXYN110N120A4

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

275 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

UNSPECIFIED

RECTANGULAR

1

850 ns

4

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-PUFM-X4

ISOLATED

78 ns

UL RECOGNIZED

IXYN80N90C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

115 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

1

201 ns

4

FLANGE MOUNT

150 Cel

SILICON

900 V

-55 Cel

20 V

5.5 V

UPPER

R-PUFM-X4

ISOLATED

134 ns

UL RECOGNIZED

IXYP60N65A5

Littelfuse

N-CHANNEL

SINGLE

NO

395 W

134 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

340 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

5.8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

60 ns

IXYT80N90C3

Littelfuse

N-CHANNEL

SINGLE

YES

830 W

165 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

GULL WING

RECTANGULAR

1

201 ns

2

SMALL OUTLINE

175 Cel

SILICON

900 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-268AA

e3

10

260

134 ns

IXYX200N65B3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN RESISTOR

NO

1560 W

410 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

IN-LINE

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

SINGLE

R-PSIP-T3

COLLECTOR

170 ns

IXYX25N250CV1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

937 W

95 A

PLASTIC/EPOXY

POWER CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

575 ns

3

IN-LINE

175 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

51 ns

IXYX50N170C

Littelfuse

N-CHANNEL

SINGLE

NO

1500 W

178 A

PLASTIC/EPOXY

POWER CONTROL

3.7 V

THROUGH-HOLE

RECTANGULAR

1

396 ns

3

IN-LINE

175 Cel

SILICON

1700 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

62 ns

IXYY8N90C3-TRL

IXYS Corporation

N-CHANNEL

SINGLE

YES

125 W

20 A

PLASTIC/EPOXY

POWER CONTROL

3 V

GULL WING

RECTANGULAR

1

238 ns

2

SMALL OUTLINE

175 Cel

SILICON

900 V

-55 Cel

20 V

6 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252AA

39 ns

MG100Q2YS42

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

700 W

100 A

UNSPECIFIED

MOTOR CONTROL

600 ns

4 V

UNSPECIFIED

RECTANGULAR

2

500 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

700 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

MG150J2YS40

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

150 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

UNSPECIFIED

RECTANGULAR

2

350 ns

7

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X7

Not Qualified

HIGH SPEED

MG15J6ES1

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

15 A

PLASTIC/EPOXY

MOTOR CONTROL

SOLDER LUG

RECTANGULAR

6

500 ns

15

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-PUFM-D15

ISOLATED

Not Qualified

400 ns

MG15N6ES42

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

15 A

6

SILICON

1000 V

Not Qualified

MG200J2YS50

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

900 W

200 A

UNSPECIFIED

MOTOR CONTROL

300 ns

2.7 V

UNSPECIFIED

RECTANGULAR

2

300 ns

200 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

900 W

150 Cel

SILICON

600 V

300 ns

20 V

400 ns

8 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

240

150 ns

MG200N1US1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1200 W

200 A

PLASTIC/EPOXY

MOTOR CONTROL

5 V

UNSPECIFIED

RECTANGULAR

1

1200 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

900 ns

MG200Q2YS91

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

200 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

MG300J1US1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 A

PLASTIC/EPOXY

POWER CONTROL

4 V

UNSPECIFIED

RECTANGULAR

1

350 ns

4

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X4

Not Qualified

HIGH SPEED

MG300Q1US1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 A

PLASTIC/EPOXY

POWER CONTROL

4 V

UNSPECIFIED

RECTANGULAR

1

500 ns

4

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X4

Not Qualified

HIGH SPEED

MG300Q1US41

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2000 W

300 A

UNSPECIFIED

MOTOR CONTROL

600 ns

4 V

UNSPECIFIED

RECTANGULAR

1

500 ns

800 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

2000 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

MG50H2YS1

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

2

900 ns

7

FLANGE MOUNT

SILICON

500 V

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

600 ns

MG50Q1BS11

Toshiba

N-CHANNEL

SINGLE

NO

300 W

50 A

UNSPECIFIED

MOTOR CONTROL

600 ns

2.7 V

UNSPECIFIED

RECTANGULAR

1

1000 ns

1200 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

300 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X3

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

MG75J2YS40

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

UNSPECIFIED

RECTANGULAR

2

350 ns

7

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X7

Not Qualified

HIGH SPEED

MG90V2YS40

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1100 W

90 A

UNSPECIFIED

MOTOR CONTROL

4.5 V

UNSPECIFIED

RECTANGULAR

2

1500 ns

400 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

1100 W

150 Cel

SILICON

1700 V

20 V

8 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

100 ns

MID100-12A3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

135 A

UNSPECIFIED

POWER CONTROL

3 V

UNSPECIFIED

RECTANGULAR

1

700 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

UL RECOGNIZED

MIXA20WB1200TED

Littelfuse

N-CHANNEL

COMPLEX

NO

100 W

28 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

7

350 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

UL RECOGNIZED

MIXA81H1200EH

Littelfuse

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

390 W

120 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

4

350 ns

14

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X14

ISOLATED

110 ns

UL RECOGNIZED

MIXG120W1200TEH

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

625 W

186 A

UNSPECIFIED

POWER CONTROL

2 V

PIN/PEG

RECTANGULAR

6

330 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-P35

ISOLATED

120 ns

UL RECOGNIZED

MMG05N60DT1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

.5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

301 ns

4

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

15 V

6 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING

TO-261

e0

MMIX4B20N300

Littelfuse

N-CHANNEL

COMPLEX

YES

34 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

4

695 ns

9

SMALL OUTLINE

SILICON

3000 V

DUAL

R-PDSO-G9

ISOLATED

608 ns

MP6750

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

55 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

THROUGH-HOLE

RECTANGULAR

6

350 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

55 W

150 Cel

SILICON

600 V

20 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T11

ISOLATED

Not Qualified

HIGH SPEED

e0

MP7003

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

37 W

40 A

PLASTIC/EPOXY

2.7 V

THROUGH-HOLE

RECTANGULAR

1

700 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T7

Not Qualified

700 ns

MUBW10-12A7

Littelfuse

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

350 ns

24

FLANGE MOUNT

SILICON

1200 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

90 ns

MWI100-12E8

IXYS Corporation

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

640 W

165 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

6

795 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN OVER NICKEL

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

e3

345 ns

UL RECOGNIZED

MWI75-12T7T

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

355 W

110 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

610 ns

21

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X21

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

UL RECOGNIZED

RGS30TSX2DGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

189 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

39 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.