Insulated Gate Bipolar Transistors (IGBT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
HGTP7N60A4	Onsemi	N-CHANNEL	SINGLE	NO	125 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	85 ns	205 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	235 ns	7 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			17 ns
NGD15N41ACLT4G	Onsemi	N-CHANNEL		YES	107 W	15 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		440 V			15 V		1.9 V	MATTE TIN			1					e3	30	260
PCFG60T120SQF	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		1.95 V	NO LEAD	SQUARE	1			2	UNCASED CHIP		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		UPPER	S-XUUC-N2				HIGH SPEED SWITCHING			NOT SPECIFIED	NOT SPECIFIED
NXH100B120H3Q0PG	Onsemi	N-CHANNEL	COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	186 W	50 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	2		291 ns	22	FLANGE MOUNT		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X22		ISOLATED		RC-IGBT			NOT SPECIFIED	NOT SPECIFIED	61 ns
NGB15N41CLT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	107 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	15500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			15 V		2.1 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	5700 ns
PCFG60T65SQF	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2.1 V	NO LEAD	SQUARE	1				UNCASED CHIP		175 Cel	SILICON	650 V		-40 Cel	20 V		6.4 V		UPPER	S-XUUC-N
NGTD17T65F2WP	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2 V	NO LEAD	RECTANGULAR	1			3	UNCASED CHIP		175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V		UPPER	R-XUUC-N3							NOT SPECIFIED	NOT SPECIFIED
FGL12040WD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	391 W	80 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		2.9 V	THROUGH-HOLE	RECTANGULAR	1		523 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V		-55 Cel	25 V		8 V	MATTE TIN	SINGLE	R-PSFM-T3					TO-264AA	e3			105 ns
NXH80T120L2Q0P2G	Onsemi	N-CHANNEL	COMPLEX	NO	158 W	67 A	UNSPECIFIED	POWER CONTROL		2.85 V	UNSPECIFIED	RECTANGULAR	4		293 ns	20	FLANGE MOUNT		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.4 V		UPPER	R-XUFM-X20		ISOLATED		RC-IGBT			NOT SPECIFIED	NOT SPECIFIED	88 ns
NXH35C120L2C2SG	Onsemi	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, 1 BRAKE IGBT, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO		35 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	7		485 ns	26	IN-LINE		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.8 V		DUAL	R-PDIP-T26		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	240 ns
PCFG40T65SQF	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2.1 V	NO LEAD	SQUARE	1			2	UNCASED CHIP		175 Cel	SILICON	650 V		-40 Cel	20 V		6.4 V		UPPER	S-XUUC-N2							NOT SPECIFIED	NOT SPECIFIED
NGTD14T65F2SWK	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2 V	NO LEAD	SQUARE	1			3	UNCASED CHIP		175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V		UPPER	S-XUUC-N3							NOT SPECIFIED	NOT SPECIFIED
MGP20N60U	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	142 W	31 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		455 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		7 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-220AB	e0			99 ns
MGC15N43CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		15 A	UNSPECIFIED	AUTOMOTIVE IGNITION			NO LEAD	UNSPECIFIED	1		21000 ns		UNCASED CHIP		175 Cel	SILICON	460 V						TIN LEAD	UPPER	X-XUUC-N			Not Qualified			e0			5000 ns
NXH80T120L3Q0S3TG	Onsemi	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	188 W	75 A	UNSPECIFIED	POWER CONTROL		2.4 V	UNSPECIFIED	RECTANGULAR	4		750 ns	20	FLANGE MOUNT		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X20		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	98 ns
NGTD13T120F2SWK	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2.4 V	NO LEAD	RECTANGULAR	1			2	UNCASED CHIP		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		UPPER	R-XUUC-N2
TIG064E8-TL-H	Onsemi	N-CHANNEL		YES														Insulated Gate BIP Transistors	150 Cel		400 V			4 V		.9 V	TIN BISMUTH			1					e6	30	260
FGHL75T65MQDTL4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR	NO	375 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		213 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T4					TO-247	e3			61 ns
TIG065E8	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES			PLASTIC/EPOXY				FLAT	RECTANGULAR	1			8	SMALL OUTLINE			SILICON	400 V							DUAL	R-PDSO-F8
NGB8202ANTF4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	POWER CONTROL	7000 ns	1.9 V	GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE		175 Cel	SILICON	440 V	9000 ns	-55 Cel	15 V	24000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR					NOT SPECIFIED	NOT SPECIFIED	6500 ns
TIG110BF	Onsemi	N-CHANNEL	SINGLE	NO	70 W	27 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		450 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			30 V		6 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				300 ns
AFGB20N60SFD-BW	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	208 W	40 A	PLASTIC/EPOXY	SWITCHING	21 ns	2.85 V	GULL WING	RECTANGULAR	1	43 ns	123 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	37 ns	-55 Cel	20 V	169 ns	6.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	30	260	28 ns	AEC-Q101
FGH75T65SHDT-155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	455 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		109 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.5 V		SINGLE	R-PSFM-T3				RC-IGBT	TO-247		NOT SPECIFIED	NOT SPECIFIED	89 ns
FGP20N60UFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	165 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	64 ns	155 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3					TO-220AB	e3			29 ns
MGC15N35CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES		15 A	UNSPECIFIED	AUTOMOTIVE IGNITION			NO LEAD	UNSPECIFIED	1		19000 ns		UNCASED CHIP		175 Cel	SILICON	380 V						TIN LEAD	UPPER	X-XUUC-N			Not Qualified	VOLTAGE CLAMPING		e0			6000 ns
NGD18N40CLBT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	115 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	13000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	430 V			18 V		1.9 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	5200 ns
FGPF4533	Onsemi	N-CHANNEL	SINGLE	NO	28.4 W	50 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		319 ns	3	FLANGE MOUNT		150 Cel	SILICON	330 V		-55 Cel	30 V		4 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED		LOW CONDUCTION LOSS	TO-220AB	e3			30 ns
FGA60N60UFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	298 W	120 A	UNSPECIFIED	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	80 ns	204 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	MATTE TIN	SINGLE	R-XSFM-T3			Not Qualified	LOW CONDUCTION LOSS		e3			83 ns
HGTP3N60A4	Onsemi	N-CHANNEL	SINGLE	NO	70 W	17 A	PLASTIC/EPOXY	POWER CONTROL	15 ns	2.7 V	THROUGH-HOLE	RECTANGULAR	1	100 ns	180 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	23 ns	-55 Cel	20 V	265 ns	7 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			17.5 ns
NGB8206ANTF4G	Onsemi	N-CHANNEL		YES	150 W	20 A			8000 ns					14000 ns				Insulated Gate BIP Transistors	175 Cel		390 V			15 V		2.1 V	MATTE TIN								e3
MGP7N60E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	81 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		415 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED SWITCHING	TO-220AB	e0			55 ns
HGTP1N120BN	Onsemi	N-CHANNEL	SINGLE	NO	60 W	5.3 A	PLASTIC/EPOXY	MOTOR CONTROL	15 ns	2.9 V	THROUGH-HOLE	RECTANGULAR	1	370 ns	333 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	32 ns	-55 Cel	20 V	458 ns			SINGLE	R-PSFM-T3		COLLECTOR		AVALANCHE RATED	TO-220AB				24 ns
VMAX016001	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		108.8 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		ISOLATED		FAST SWITCHING	TO-247	e3	NOT SPECIFIED	NOT SPECIFIED	32 ns	AEC-Q101
FGL40N120AN	Onsemi	N-CHANNEL	SINGLE	NO	500 W	64 A	PLASTIC/EPOXY	POWER CONTROL		3.2 V	THROUGH-HOLE	RECTANGULAR	1	80 ns	165 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V		-55 Cel	25 V		7.5 V		SINGLE	R-PSFM-T3				RC-IGBT	TO-264AA				45 ns
NGB8206ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	POWER CONTROL	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	390 V			15 V		2.1 V	MATTE TIN	SINGLE	R-PSSO-G2		COLLECTOR		LOGIC LEVEL COMPATIBLE		e3			6500 ns
SNXH100M95H3Q2F2PG	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	NO	457 W	263 A	UNSPECIFIED	POWER CONTROL	77 ns	2.25 V	UNSPECIFIED	RECTANGULAR	6	264 ns	1665 ns	40	FLANGE MOUNT		150 Cel	SILICON	950 V		-40 Cel	20 V		5.7 V		UPPER	R-XUFM-X40		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	306 ns
PCFG40T120SQF	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		1.95 V	NO LEAD	RECTANGULAR	1			3	UNCASED CHIP		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		UPPER	R-XUUC-N3
MGW12N120D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	123 W	20 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	ULTRAFAST, HIGH SPEED	TO-247AE	e0
NGTD17T65F2SWK	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2 V	NO LEAD	RECTANGULAR	1			3	UNCASED CHIP		175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V		UPPER	R-XUUC-N3							NOT SPECIFIED	NOT SPECIFIED
NGD8205NT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	88 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	390 V			15 V		2.1 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	6500 ns
HGTP7N60A4-F102	Onsemi	N-CHANNEL	SINGLE	NO	125 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	85 ns	205 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	235 ns	7 V		SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-220AB				17 ns
SNXH100M65L3Q2F2PG	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	NO	339 W	263 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	8		3780 ns	40	FLANGE MOUNT		150 Cel	SILICON	650 V		-40 Cel	20 V		6.5 V	MATTE TIN	UPPER	R-XUFM-X40		ISOLATED				e3			357 ns
FGHL50T65MQDTL4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		373 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T4					TO-247	e3			77 ns
FGI3040G2-F085	Onsemi	N-CHANNEL		NO	150 W	41 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		390 V			12 V		2.2 V										NOT SPECIFIED	NOT SPECIFIED
NXH80T120L2Q0S1GQ0PACK	Onsemi
FGPF4536TU	Onsemi	N-CHANNEL	SINGLE	NO			PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		292 ns	3	FLANGE MOUNT		150 Cel	SILICON	360 V							SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	25.6 ns
FGI3236-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	187 W	44 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		THROUGH-HOLE	RECTANGULAR	1	15000 ns	7040 ns	3	IN-LINE	Insulated Gate BIP Transistors	175 Cel	SILICON	350 V			12 V		2.2 V	MATTE TIN	SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified		TO-262AA	e3			2350 ns
NGB18N40CLBT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	115 W	18 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	13000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	430 V			18 V		1.9 V	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3		260	5200 ns

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.