SINGLE WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

PSMN021-100YLX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

197 A

80.8 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.022 ohm

49 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

IEC-60134

SI7465DP-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.5 W

UNSPECIFIED

60 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

25 A

24.2 mJ

3.2 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.064 ohm

3.2 A

DUAL

R-XDSO-C5

1

DRAIN

Not Qualified

e3

30

260

SI7848BDP-T1-E3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

UNSPECIFIED

SWITCHING

40 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

50 A

11 mJ

47 A

5

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.009 ohm

16 A

DUAL

R-XDSO-C5

1

DRAIN

Not Qualified

e3

30

260

IPB108N15N3GATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

332 A

330 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0108 ohm

83 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

IRF3415PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

150 A

590 mJ

43 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.042 ohm

43 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

30

250

SIR668ADP-T1-RE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

61.2 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0048 ohm

93.6 A

DUAL

R-PDSO-F5

DRAIN

NOT SPECIFIED

NOT SPECIFIED

STP5NK80ZFP-H

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

17.2 A

190 mJ

4.3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.4 ohm

4.3 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

BSP135H6906XTSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

.48 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

45 ohm

.12 A

DUAL

R-PDSO-G4

1

DRAIN

e3

AEC-Q101

IRF9335TRPBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

43 A

98 mJ

5.4 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.059 ohm

5.4 A

DUAL

R-PDSO-G8

1

Not Qualified

MS-012AA

e3

40

260

SI7110DN-T1-E3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

UNSPECIFIED

SWITCHING

20 V

C BEND

SQUARE

ENHANCEMENT MODE

1

60 A

61 mJ

13.5 A

5

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0053 ohm

13.5 A

DUAL

S-XDSO-C5

1

DRAIN

Not Qualified

e3

30

260

STP13NK60Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

400 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.55 ohm

13 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

AUIRFR4620TRL

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

144 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

113 mJ

24 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.078 ohm

24 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

TO-252AA

e3

30

260

BSC080P03LSGAUMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

120 A

248 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.008 ohm

16 A

DUAL

R-PDSO-F8

3

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

BSP299H6327XUSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

130 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

4 ohm

.4 A

DUAL

R-PDSO-G4

3

DRAIN

AVALANCHE RATED

e3

40

260

AEC-Q101

BSZ097N10NS5ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

160 A

82 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0097 ohm

8 A

DUAL

S-PDSO-N8

1

DRAIN

e3

BSZ120P03NS3GATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

160 A

73 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.02 ohm

11 A

DUAL

S-PDSO-F8

1

DRAIN

Not Qualified

e3

DMPH6050SFGQ-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.8 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

32 A

30.8 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2.8 W

175 Cel

SILICON

-55 Cel

MATTE TIN

.07 ohm

18 A

DUAL

S-PDSO-N8

1

DRAIN

HIGH RELIABILITY

e3

30

260

64.7 pF

AEC-Q101; MIL-STD-202

IPB60R060P7ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

151 A

159 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN

.06 ohm

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

IPP60R190C6XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

59 A

418 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.19 ohm

20.2 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IRF640NSTRL

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

72 A

247 mJ

18 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.15 ohm

18 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-263AB

e0

30

225

IRFP260NHR

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

560 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.04 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

TO-247AC

IRFS4620TRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

144 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

113 mJ

24 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0775 ohm

24 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

260

SI7460DP-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5.4 W

UNSPECIFIED

SWITCHING

60 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

40 A

125 mJ

11 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0096 ohm

11 A

DUAL

R-XDSO-C5

1

DRAIN

Not Qualified

e3

30

260

SPA11N80C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

41 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

470 mJ

5.9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.45 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e3

STP60NF10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

485 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.023 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

TPW4R50ANH,L1Q

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

SQUARE

ENHANCEMENT MODE

1

400 A

125 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0045 ohm

92 A

DUAL

S-PDSO-F5

DRAIN

63 pF

AO3414L

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.05 ohm

4.2 A

DUAL

R-PDSO-G3

TO-236

NOT SPECIFIED

NOT SPECIFIED

AUIRFR3710ZTRL

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

140 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

220 A

200 mJ

42 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.018 ohm

42 A

SINGLE

R-PSSO-G2

Not Qualified

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

BSZ100N06NSATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

160 A

19 mJ

8

POST/STUD MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.01 ohm

40 A

DUAL

S-PDSO-N8

1

DRAIN

e3

32 pF

FDD18N20LZ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

89 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

64 A

320 mJ

16 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.13 ohm

16 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

FDMC86259P

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

62 W

PLASTIC/EPOXY

SWITCHING

150 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

20 A

181 mJ

3.2 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.107 ohm

3.2 A

DUAL

S-PDSO-N5

1

DRAIN

MO-240BA

e3

30

260

IPB80P04P4L04ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

60 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.0071 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

NOT SPECIFIED

NOT SPECIFIED

IPP60R180P7XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

53 A

56 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN

.18 ohm

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

IRF7452TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

200 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.06 ohm

4.5 A

DUAL

R-PDSO-G8

1

MS-012AA

e3

IRFR9024TRPBF

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

42 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

300 mJ

8.8 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.28 ohm

8.8 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-252

e3

30

260

FDB0170N607L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1620 A

1109 mJ

300 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

200 ns

-55 Cel

193 ns

MATTE TIN

.0014 ohm

300 A

SINGLE

R-PSSO-G6

1

DRAIN

TO-263CB

e3

30

245

340 pF

FDPF18N20FT

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

41 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

324 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.14 ohm

18 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

IPD30N06S2L23ATMA3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

150 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN

.03 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

AEC-Q101

IRL2910STRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

190 A

520 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN OVER NICKEL

.03 ohm

55 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED

e3

30

260

IXFH26N50P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

78 A

300 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.25 ohm

26 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

e3

10

260

8 pF

SISH129DN-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

52.1 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

60 A

31.25 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

39 ns

-50 Cel

74 ns

.0114 ohm

35 A

DUAL

S-PDSO-N5

DRAIN

NOT SPECIFIED

NOT SPECIFIED

322 pF

STP75NF20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

205 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.034 ohm

75 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

BSC252N10NSFGATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

160 A

68 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0252 ohm

7.2 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

e3

BSP297H6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.64 A

.66 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.8 ohm

.66 A

DUAL

R-PDSO-G4

DRAIN

LOGIC LEVEL COMPATIBLE

e3

AEC-Q101

CSD18514Q5AT

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

237 A

55 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0079 ohm

18 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

138 pF

FDP80N06

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

176 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

480 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.01 ohm

80 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IPB019N06L3GATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

634 mJ

120 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0019 ohm

120 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

IPB80P03P4L04ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

410 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.007 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.