SINGLE WITH BUILT-IN DIODE AND RESISTOR Power Field Effect Transistors (FET) 73

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NTK3139PT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.55 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1.2 A

.78 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.48 ohm

.78 A

DUAL

R-PDSO-F3

1

Not Qualified

e3

30

260

SIA433EDJ-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

19 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

50 A

12 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.018 ohm

12 A

DUAL

S-PDSO-N6

DRAIN

Not Qualified

260

SSM3K361RLF(T

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

14 A

9.1 mJ

3.5 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.069 ohm

3.5 A

DUAL

R-PDSO-F3

AEC-Q101

SSM3K361R,LF(T

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

14 A

9.1 mJ

3.5 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.069 ohm

3.5 A

DUAL

R-PDSO-F3

AEC-Q101

SSM3K361R,LF

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

14 A

9.1 mJ

3.5 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.069 ohm

3.5 A

DUAL

R-PDSO-F3

22 pF

SSM3K361R,LF(B

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

14 A

9.1 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.069 ohm

3.5 A

DUAL

R-PDSO-F3

22 pF

CSD23285F5T

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

UNSPECIFIED

SWITCHING

12 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

31 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.13 ohm

3.3 A

BOTTOM

R-XBCC-N3

1

e4

30

260

48 pF

CSD23280F3T

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

12 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

1

11.4 A

3

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.25 ohm

1.8 A

BOTTOM

R-PBGA-B3

1

DRAIN

e4

30

260

11.1 pF

SSM3K361R,LXHF

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

14 A

9.1 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.069 ohm

3.5 A

DUAL

R-PDSO-F3

22 pF

AEC-Q101

CSD22206WT

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

8 V

BALL

SQUARE

ENHANCEMENT MODE

1

108 A

9

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.0091 ohm

5 A

BOTTOM

S-PBGA-B9

1

ULTRA LOW RESISTANCE

e1

30

260

440 pF

CSD25485F5T

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.4 W

UNSPECIFIED

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

31 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.07 ohm

5.3 A

BOTTOM

R-XBCC-N3

1

e4

30

260

23 pF

IXTT30N50L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

400 W

PLASTIC/EPOXY

AMPLIFIER

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

1500 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.215 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-268AA

e3

10

260

115 pF

CSD22206W

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

8 V

BALL

SQUARE

ENHANCEMENT MODE

1

108 A

9

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.0091 ohm

5 A

BOTTOM

S-PBGA-B9

1

ULTRA LOW RESISTANCE

e1

30

260

440 pF

CSD23285F5

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

UNSPECIFIED

SWITCHING

12 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

31 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.13 ohm

3.3 A

BOTTOM

R-XBCC-N3

1

e4

30

260

48 pF

IXTT75N10L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

400 W

PLASTIC/EPOXY

AMPLIFIER

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

225 A

2500 mJ

75 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.021 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-268AA

e3

10

260

350 pF

IXTH75N10L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

400 W

PLASTIC/EPOXY

AMPLIFIER

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

225 A

2500 mJ

75 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.021 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

350 pF

IXTH30N50L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

400 W

PLASTIC/EPOXY

AMPLIFIER

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.215 ohm

30 A

SINGLE

R-PSFM-T3

DRAIN

TO-247AD

e3

10

260

115 pF

CSD22205LT

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

8 V

BUTT

SQUARE

ENHANCEMENT MODE

1

71 A

4

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.04 ohm

7.4 A

BOTTOM

S-PBGA-B4

1

e4

30

260

250 pF

CSD23280F3

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

12 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

1

11.4 A

3

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.25 ohm

1.8 A

BOTTOM

R-PBGA-B3

1

DRAIN

e4

30

260

11.1 pF

CSD22204WT

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

UNSPECIFIED

SWITCHING

8 V

BALL

SQUARE

ENHANCEMENT MODE

1

80 A

9

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.014 ohm

5 A

BOTTOM

S-XBGA-B9

1

e1

30

260

265 pF

CSD22205L

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

8 V

BUTT

SQUARE

ENHANCEMENT MODE

1

71 A

4

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.04 ohm

7.4 A

BOTTOM

S-PBGA-B4

1

e4

30

260

250 pF

CSD25201W15

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

20 V

BALL

SQUARE

ENHANCEMENT MODE

1

4 A

9

GRID ARRAY

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.07 ohm

4 A

BOTTOM

S-PBGA-B9

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CSD22204W

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

UNSPECIFIED

SWITCHING

8 V

BALL

SQUARE

ENHANCEMENT MODE

1

80 A

9

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.014 ohm

5 A

BOTTOM

S-XBGA-B9

1

e1

30

260

265 pF

CSD17585F5

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.4 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

34 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.033 ohm

3.6 A

BOTTOM

R-XBCC-N3

1

e4

30

260

7.4 pF

CSD17585F5T

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.4 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

34 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.033 ohm

3.6 A

BOTTOM

R-XBCC-N3

1

e4

30

260

7.4 pF

CSD22202W15

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.5 W

UNSPECIFIED

SWITCHING

8 V

BALL

SQUARE

ENHANCEMENT MODE

1

48 A

10 A

9

GRID ARRAY

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.0174 ohm

5 A

BOTTOM

S-XBGA-B9

1

e1

30

260

250 pF

CSD25485F5

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.4 W

UNSPECIFIED

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

31 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.07 ohm

5.3 A

BOTTOM

R-XBCC-N3

1

e4

30

260

23 pF

NID9N05BCLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.74 W

PLASTIC/EPOXY

SWITCHING

52 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

160 mJ

9 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

950 ns

-55 Cel

3850 ns

MATTE TIN

.181 ohm

9 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

40 pF

NIF9N05CLT1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.69 W

PLASTIC/EPOXY

SWITCHING

52 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

110 mJ

2.6 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.125 ohm

2.6 A

DUAL

R-PDSO-G4

3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-261AA

e0

30

235

NIF9N05ACLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.69 W

PLASTIC/EPOXY

SWITCHING

52 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

110 mJ

2.6 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.125 ohm

2.6 A

DUAL

R-PDSO-G4

DRAIN

LOGIC LEVEL COMPATIBLE

TO-261AA

e3

NIF9N05ACLT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.69 W

PLASTIC/EPOXY

SWITCHING

52 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

110 mJ

2.6 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.125 ohm

2.6 A

DUAL

R-PDSO-G4

DRAIN

LOGIC LEVEL COMPATIBLE

TO-261AA

e3

NIF9N05CLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.69 W

PLASTIC/EPOXY

SWITCHING

52 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

110 mJ

2.6 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.125 ohm

2.6 A

DUAL

R-PDSO-G4

3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-261AA

e3

30

260

MTP12N08EZL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

45 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

72 mJ

12 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

630 ns

-55 Cel

720 ns

.18 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

100 pF

NIF9N05CLT3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.69 W

PLASTIC/EPOXY

SWITCHING

52 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

110 mJ

2.6 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.125 ohm

2.6 A

DUAL

R-PDSO-G4

3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-261AA

e0

30

235

NTK3139PT5G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.55 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1.2 A

.78 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.48 ohm

.66 A

DUAL

R-PDSO-F3

1

Not Qualified

e3

30

260

NID9N05ACLG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.74 W

PLASTIC/EPOXY

SWITCHING

52 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

160 mJ

9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.181 ohm

9 A

SINGLE

R-PSSO-G2

DRAIN

LOGIC LEVEL COMPATIBLE

NIF9N05CLT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

59 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.2 ohm

2.6 A

DUAL

R-PDSO-G3

Not Qualified

e0

NID9N05ACLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.74 W

PLASTIC/EPOXY

SWITCHING

52 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

160 mJ

9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

950 ns

-55 Cel

3850 ns

MATTE TIN

.181 ohm

9 A

SINGLE

R-PSSO-G2

1

DRAIN

LOGIC LEVEL COMPATIBLE

e3

30

260

40 pF

NIF9N05CLT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.69 W

PLASTIC/EPOXY

SWITCHING

52 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

110 mJ

2.6 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.125 ohm

2.6 A

DUAL

R-PDSO-G4

3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-261AA

e3

30

260

STP70NS04ZC

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

180 W

PLASTIC/EPOXY

SWITCHING

33 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

720 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.011 ohm

80 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STP90NS04ZC

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

280 W

PLASTIC/EPOXY

SWITCHING

33 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

750 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.006 ohm

80 A

SINGLE

R-PSFM-T3

1

Not Qualified

TO-220AB

934061237127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

PLASTIC/EPOXY

SWITCHING

34 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

872 A

1900 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0033 ohm

218 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

934057492127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

PLASTIC/EPOXY

SWITCHING

34 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

358 A

465 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.011 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

934057493127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

PLASTIC/EPOXY

SWITCHING

34 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

590 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.006 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

BUK7L11-34ARC,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

172 W

PLASTIC/EPOXY

SWITCHING

34 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

358 A

465 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.011 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

BUK7L06-34ARC,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

250 W

PLASTIC/EPOXY

SWITCHING

34 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

590 A

1000 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.006 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

BUK7L06-34ARC

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

250 W

PLASTIC/EPOXY

SWITCHING

34 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

590 A

1000 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.006 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

BUK7L3R3-34BRC

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

298 W

PLASTIC/EPOXY

SWITCHING

34 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

872 A

1900 mJ

218 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0033 ohm

218 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.