Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.55 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.2 A |
.78 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.48 ohm |
.78 A |
DUAL |
R-PDSO-F3 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
19 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
50 A |
12 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.018 ohm |
12 A |
DUAL |
S-PDSO-N6 |
DRAIN |
Not Qualified |
260 |
|||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.2 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
9.1 mJ |
3.5 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.069 ohm |
3.5 A |
DUAL |
R-PDSO-F3 |
AEC-Q101 |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.2 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
9.1 mJ |
3.5 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.069 ohm |
3.5 A |
DUAL |
R-PDSO-F3 |
AEC-Q101 |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.2 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
9.1 mJ |
3.5 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.069 ohm |
3.5 A |
DUAL |
R-PDSO-F3 |
22 pF |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.2 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
9.1 mJ |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.069 ohm |
3.5 A |
DUAL |
R-PDSO-F3 |
22 pF |
|||||||||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
UNSPECIFIED |
SWITCHING |
12 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
31 A |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.13 ohm |
3.3 A |
BOTTOM |
R-XBCC-N3 |
1 |
e4 |
30 |
260 |
48 pF |
||||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
12 V |
BUTT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
11.4 A |
3 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.25 ohm |
1.8 A |
BOTTOM |
R-PBGA-B3 |
1 |
DRAIN |
e4 |
30 |
260 |
11.1 pF |
|||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.2 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
9.1 mJ |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.069 ohm |
3.5 A |
DUAL |
R-PDSO-F3 |
22 pF |
AEC-Q101 |
||||||||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
8 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
108 A |
9 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.0091 ohm |
5 A |
BOTTOM |
S-PBGA-B9 |
1 |
ULTRA LOW RESISTANCE |
e1 |
30 |
260 |
440 pF |
|||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.4 W |
UNSPECIFIED |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
31 A |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.07 ohm |
5.3 A |
BOTTOM |
R-XBCC-N3 |
1 |
e4 |
30 |
260 |
23 pF |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
400 W |
PLASTIC/EPOXY |
AMPLIFIER |
500 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
60 A |
1500 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.215 ohm |
30 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-268AA |
e3 |
10 |
260 |
115 pF |
||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
8 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
108 A |
9 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.0091 ohm |
5 A |
BOTTOM |
S-PBGA-B9 |
1 |
ULTRA LOW RESISTANCE |
e1 |
30 |
260 |
440 pF |
|||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
UNSPECIFIED |
SWITCHING |
12 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
31 A |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.13 ohm |
3.3 A |
BOTTOM |
R-XBCC-N3 |
1 |
e4 |
30 |
260 |
48 pF |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
400 W |
PLASTIC/EPOXY |
AMPLIFIER |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
225 A |
2500 mJ |
75 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.021 ohm |
75 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
AVALANCHE RATED |
TO-268AA |
e3 |
10 |
260 |
350 pF |
||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
400 W |
PLASTIC/EPOXY |
AMPLIFIER |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
225 A |
2500 mJ |
75 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.021 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-247AD |
e3 |
10 |
260 |
350 pF |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
400 W |
PLASTIC/EPOXY |
AMPLIFIER |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
60 A |
1500 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.215 ohm |
30 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-247AD |
e3 |
10 |
260 |
115 pF |
|||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
8 V |
BUTT |
SQUARE |
ENHANCEMENT MODE |
1 |
71 A |
4 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.04 ohm |
7.4 A |
BOTTOM |
S-PBGA-B4 |
1 |
e4 |
30 |
260 |
250 pF |
||||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
12 V |
BUTT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
11.4 A |
3 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.25 ohm |
1.8 A |
BOTTOM |
R-PBGA-B3 |
1 |
DRAIN |
e4 |
30 |
260 |
11.1 pF |
|||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
UNSPECIFIED |
SWITCHING |
8 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
9 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.014 ohm |
5 A |
BOTTOM |
S-XBGA-B9 |
1 |
e1 |
30 |
260 |
265 pF |
||||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
8 V |
BUTT |
SQUARE |
ENHANCEMENT MODE |
1 |
71 A |
4 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.04 ohm |
7.4 A |
BOTTOM |
S-PBGA-B4 |
1 |
e4 |
30 |
260 |
250 pF |
||||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
4 A |
9 |
GRID ARRAY |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.07 ohm |
4 A |
BOTTOM |
S-PBGA-B9 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
UNSPECIFIED |
SWITCHING |
8 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
9 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.014 ohm |
5 A |
BOTTOM |
S-XBGA-B9 |
1 |
e1 |
30 |
260 |
265 pF |
||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.4 W |
UNSPECIFIED |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
34 A |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.033 ohm |
3.6 A |
BOTTOM |
R-XBCC-N3 |
1 |
e4 |
30 |
260 |
7.4 pF |
|||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.4 W |
UNSPECIFIED |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
34 A |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.033 ohm |
3.6 A |
BOTTOM |
R-XBCC-N3 |
1 |
e4 |
30 |
260 |
7.4 pF |
|||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.5 W |
UNSPECIFIED |
SWITCHING |
8 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
48 A |
10 A |
9 |
GRID ARRAY |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.0174 ohm |
5 A |
BOTTOM |
S-XBGA-B9 |
1 |
e1 |
30 |
260 |
250 pF |
|||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.4 W |
UNSPECIFIED |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
31 A |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.07 ohm |
5.3 A |
BOTTOM |
R-XBCC-N3 |
1 |
e4 |
30 |
260 |
23 pF |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.74 W |
PLASTIC/EPOXY |
SWITCHING |
52 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
35 A |
160 mJ |
9 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
950 ns |
-55 Cel |
3850 ns |
MATTE TIN |
.181 ohm |
9 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
e3 |
30 |
260 |
40 pF |
||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.69 W |
PLASTIC/EPOXY |
SWITCHING |
52 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10 A |
110 mJ |
2.6 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
.125 ohm |
2.6 A |
DUAL |
R-PDSO-G4 |
3 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-261AA |
e0 |
30 |
235 |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.69 W |
PLASTIC/EPOXY |
SWITCHING |
52 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10 A |
110 mJ |
2.6 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.125 ohm |
2.6 A |
DUAL |
R-PDSO-G4 |
DRAIN |
LOGIC LEVEL COMPATIBLE |
TO-261AA |
e3 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.69 W |
PLASTIC/EPOXY |
SWITCHING |
52 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10 A |
110 mJ |
2.6 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.125 ohm |
2.6 A |
DUAL |
R-PDSO-G4 |
DRAIN |
LOGIC LEVEL COMPATIBLE |
TO-261AA |
e3 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.69 W |
PLASTIC/EPOXY |
SWITCHING |
52 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10 A |
110 mJ |
2.6 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.125 ohm |
2.6 A |
DUAL |
R-PDSO-G4 |
3 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-261AA |
e3 |
30 |
260 |
||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
45 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
72 mJ |
12 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
630 ns |
-55 Cel |
720 ns |
.18 ohm |
12 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
100 pF |
|||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.69 W |
PLASTIC/EPOXY |
SWITCHING |
52 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10 A |
110 mJ |
2.6 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
.125 ohm |
2.6 A |
DUAL |
R-PDSO-G4 |
3 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-261AA |
e0 |
30 |
235 |
|||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.55 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.2 A |
.78 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.48 ohm |
.66 A |
DUAL |
R-PDSO-F3 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.74 W |
PLASTIC/EPOXY |
SWITCHING |
52 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
35 A |
160 mJ |
9 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.181 ohm |
9 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
LOGIC LEVEL COMPATIBLE |
|||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
59 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.2 ohm |
2.6 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
e0 |
||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.74 W |
PLASTIC/EPOXY |
SWITCHING |
52 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
35 A |
160 mJ |
9 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
950 ns |
-55 Cel |
3850 ns |
MATTE TIN |
.181 ohm |
9 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
LOGIC LEVEL COMPATIBLE |
e3 |
30 |
260 |
40 pF |
||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.69 W |
PLASTIC/EPOXY |
SWITCHING |
52 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10 A |
110 mJ |
2.6 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.125 ohm |
2.6 A |
DUAL |
R-PDSO-G4 |
3 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-261AA |
e3 |
30 |
260 |
||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
180 W |
PLASTIC/EPOXY |
SWITCHING |
33 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
720 mJ |
80 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.011 ohm |
80 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
280 W |
PLASTIC/EPOXY |
SWITCHING |
33 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
750 mJ |
80 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.006 ohm |
80 A |
SINGLE |
R-PSFM-T3 |
1 |
Not Qualified |
TO-220AB |
|||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
PLASTIC/EPOXY |
SWITCHING |
34 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
872 A |
1900 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0033 ohm |
218 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
|||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
PLASTIC/EPOXY |
SWITCHING |
34 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
358 A |
465 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.011 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
PLASTIC/EPOXY |
SWITCHING |
34 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
590 A |
1000 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.006 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
172 W |
PLASTIC/EPOXY |
SWITCHING |
34 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
358 A |
465 mJ |
75 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.011 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
|||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
250 W |
PLASTIC/EPOXY |
SWITCHING |
34 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
590 A |
1000 mJ |
75 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.006 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
|||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
250 W |
PLASTIC/EPOXY |
SWITCHING |
34 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
590 A |
1000 mJ |
75 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.006 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
|||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
298 W |
PLASTIC/EPOXY |
SWITCHING |
34 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
872 A |
1900 mJ |
218 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0033 ohm |
218 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.